Patents by Inventor Jolanta Celinska
Jolanta Celinska has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6831313Abstract: A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.Type: GrantFiled: July 22, 2003Date of Patent: December 14, 2004Assignees: Symetrix Corporation, Matsushita Electric Industrial Co., Ltd.Inventors: Kiyoshi Uchiyama, Carlos A. Paz de Araujo, Vikram Joshi, Narayan Solayappan, Jolanta Celinska, Larry D. McMillan
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Publication number: 20040232468Abstract: A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.Type: ApplicationFiled: June 21, 2004Publication date: November 25, 2004Applicant: Symetrix CorporationInventors: Narayan Solayappan, Jolanta Celinska, Vikram Joshi, Carlos A. Paz de Araujo, Larry D. McMillan
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Patent number: 6815223Abstract: A precursor for forming a thin film of layered superlattice material is applied to an integrated circuit substrate. The precursor coating is heated using rapid thermal processing (RTP) with a ramping rate of 100° C./second at a hold temperature in a range of from 500° C. to 900° C. for a cumulative heating time not exceeding 30 minutes, and preferably less than 5 minutes. In fabricating a ferroelectric memory cell, the coating is heated in oxygen using RTP, then a top electrode layer is formed, and then the substrate including the coating is heated using RTP in oxygen or in nonreactive gas after forming the top electrode layer. The thin film of layered superlattice material preferably comprises strontium bismuth tantalate or strontium bismuth tantalum niobate, and preferably has a thickness in a range of from 25 nm to 120 nm. The process of fabricating a thin film of layered superlattice material typically has a thermal budget value not exceeding 960,000° C.Type: GrantFiled: November 22, 2002Date of Patent: November 9, 2004Assignee: Symetrix CorporationInventors: Jolanta Celinska, Vikram Joshi, Narayan Solayappan, Myoungho Lim, Larry D. McMillan, Carlos A. Paz de Araujo
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Patent number: 6781184Abstract: A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.Type: GrantFiled: November 29, 2001Date of Patent: August 24, 2004Assignee: Symetrix CorporationInventors: Narayan Solayappan, Jolanta Celinska, Vikram Joshi, Carlos A. Paz de Araujo, Larry D. McMillan
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Publication number: 20040129987Abstract: A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.Type: ApplicationFiled: July 22, 2003Publication date: July 8, 2004Inventors: Kiyoshi Uchiyama, Carlos A. Paz de Araujo, Vikram Joshi, Narayan Solayappan, Jolanta Celinska, Larry D. McMillan
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Publication number: 20040101977Abstract: A precursor for forming a thin film of layered superlattice material is applied to an integrated circuit substrate. The precursor coating is heated using rapid thermal processing (RTP) with a ramping rate of 100° C./second at a hold temperature in a range of from 500° C. to 900° C. for a cumulative heating time not exceeding 30 minutes, and preferably less than 5 minutes. In fabricating a ferroelectric memory cell, the coating is heated in oxygen using RTP, then a top electrode layer is formed, and then the substrate including the coating is heated using RTP in oxygen or in nonreactive gas after forming the top electrode layer. The thin film of layered superlattice material preferably comprises strontium bismuth tantalate or strontium bismuth tantalum niobate, and preferably has a thickness in a range of from 25 nm to 120 nm. The process of fabricating a thin film of layered superlattice material typically has a thermal budget value not exceeding 960,000° C.Type: ApplicationFiled: November 22, 2002Publication date: May 27, 2004Applicant: Symetrix CorporationInventors: Jolanta Celinska, Vikram Joshi, Narayan Solayappan, Myoungho Lim, Larry D. McMillan, Carlos A. Paz de Araujo
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Patent number: 6686489Abstract: A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor.Type: GrantFiled: November 9, 2001Date of Patent: February 3, 2004Assignee: Symetrix CorporationInventors: Jolanta Celinska, Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Jeffrey W. Bacon, Larry D. McMillan
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Patent number: 6582972Abstract: A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.Type: GrantFiled: April 7, 2000Date of Patent: June 24, 2003Assignees: Symetrix Corporation, Matsushita Electronics CorporationInventors: Vikram Joshi, Jolanta Celinska, Narayan Solayappan, Larry D. McMillan, Carlos A. Paz de Araujo, Koji Arita
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Publication number: 20030098497Abstract: A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.Type: ApplicationFiled: November 29, 2001Publication date: May 29, 2003Applicant: Symetrix CorporationInventors: Narayan Solayappan, Jolanta Celinska, Vikram Joshi, Carlos A. Paz de Araujo, Larry D. McMillan
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Patent number: 6495709Abstract: A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.Type: GrantFiled: March 16, 2000Date of Patent: December 17, 2002Assignees: Symetrix Corporation, Matsushita Electric Industrial Co., Ltd.Inventors: Jolanta Celinska, Jeffrey W. Bacon, Akihiro Matsuda, Carlos A. Paz de Araujo
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Publication number: 20020168785Abstract: A ferroelectric memory includes a plurality of memory cells each containing a ferroelectric thin film including a microscopically composite material having a ferroelectric material component and a fluxor material component, the fluxor material being a different chemical compound than the ferroelectric material. The fluxor is a material having a higher crystallization velocity than the ferroelectric material. The addition of the fluxor permits a ferroelectric thin film to be crystalized at a temperature of between 400° C. and 550° C.Type: ApplicationFiled: May 10, 2001Publication date: November 14, 2002Applicant: Symetrix CorporationInventors: Carlos A. Paz de Araujo, Vikram Joshi, Narayan Solayappan, Jolanta Celinska, Larry D. McMillan
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Publication number: 20020087018Abstract: A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor.Type: ApplicationFiled: November 9, 2001Publication date: July 4, 2002Applicant: Symetrix CorporationInventors: Jolanta Celinska, Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Jeffrey W. Bacon, Larry D. McMillan
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Patent number: 6376691Abstract: A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor.Type: GrantFiled: September 1, 1999Date of Patent: April 23, 2002Assignee: Symetrix CorporationInventors: Jolanta Celinska, Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Jeffrey W. Bacon, Larry D. McMillan
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Patent number: 6174213Abstract: Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.Type: GrantFiled: September 1, 1999Date of Patent: January 16, 2001Assignees: Symetrix Corporation, Matsushita Electronics CorporationInventors: Carlos A. Paz de Araujo, Jolanta Celinska, Joseph D. Cuchiaro, Jeffrey W. Bacon, Larry D. McMillan, Akihiro Matsuda, Gota Kano, Yoshio Yamaguchi, Tatsuo Morita, Hideo Nagai