Abstract: An adjustable delay line includes a series of delay elements for adjusting the accumulative delay. Each element has a plurality of registers indicating to various devices within the delay element to be ‘on’ or ‘off’, thereby changing the time delay through the element. A master control indicates to the delay line whether to go faster (increment) or go slower (decrement). When one of these control signals is applied to the delay line, it is applied to half the elements, either the odd or the even numbered elements. Only one element will have its state changed by the increment or decrement control signal, and it will be the element for which the previous delay's corresponding element is already set or un-set depending upon the applicable case.

Abstract: An adjustable delay line includes a series of delay elements for adjusting the accumulative delay. Each element has a plurality of registers indicating to various devices within the delay element to be ‘on’ or ‘off’, thereby changing the time delay through the element. A master control indicates to the delay line whether to go faster (increment) or go slower (decrement). When one of these control signals is applied to the delay line, it is applied to half the elements, either the odd or the even numbered elements. Only one element will have its state changed by the increment or decrement control signal, and it will be the element for which the previous delay's corresponding element is already set or un-set depending upon the applicable case.

Abstract: An adjustable delay line includes a series of delay elements for adjusting the accumulative delay. Each element has a plurality of registers indicating to various devices within the delay element to be ‘on’ or ‘off’, thereby changing the time delay through the element. A master control indicates to the delay line whether to go faster (increment) or go slower (decrement). When one of these control signals is applied to the delay line, it is applied to half the elements, either the odd or the even numbered elements. Only one element will have its state changed by the increment or decrement control signal, and it will be the element for which the previous delay's corresponding element is already set or un-set depending upon the applicable case.

Abstract: A method for correcting the duty cycle of a clock signal uses two-dual-slope integrators with two comparators; each comparator is connected to both integrators and configured to include a “dead band” when the input pulse duty cycle is at or near 50%. One comparator detects when duty cycle is high and the other comparator detects when the duty cycle is low. When the duty cycle is within the “dead band” range, neither comparator goes valid. This provides an analog filter where the output comparators will not instantaneously switch between opposite duty cycle correction states. When the duty cycle is greater or less than 50%, the integrated voltages on the two integrators move in opposite directions producing twice the signal magnitude on differential inputs of the comparators, as compared with using a single integrator architecture.

Abstract: A method for correcting the duty cycle of a clock signal uses two-dual-slope integrators with two comparators; each comparator is connected to both integrators and configured to include a “dead band” when the input pulse duty cycle is at or near 50%. One comparator detects when duty cycle is high and the other comparator detects when the duty cycle is low. When the duty cycle is within the “dead band” range, neither comparator goes valid. This provides an analog filter where the output comparators will not instantaneously switch between opposite duty cycle correction states. When the duty cycle is greater or less than 50%, the integrated voltages on the two integrators move in opposite directions producing twice the signal magnitude on differential inputs of the comparators, as compared with using a single integrator architecture.

Abstract: A data capture circuit includes strobes that track input data even when conditions arise that cause the differences in skew from interpreting data state ones and zeros. This is accomplished whether these skews arise from reference voltage variation, data pattern loading, power supply droop, process variations within the chip itself, or other causes. The differential input strobes of the data capture circuit are input into individual input buffers, each compared against a reference voltage individually, as well as a data input pin. The outputs from these buffers are maintained separate from each other all the way to the point where the input data is latched. In latching the input data, data ones are latched entirely based on input signals derived from a rising edge (both strobes and data), and zeros are latched entirely based on input signals derived from a falling edge (both strobes and data).

Abstract: An asymmetric data path position and delays technique enabling high speed access in integrated circuit memory devices which is asymmetric in terms of the delay from the array to the I/O buffers based on the position relative within a known starting address of a pre-fetch field. In accordance with the technique of the present invention, the delay is not only asymmetric in terms of its physical length, but also in the number of pipeline stages and the clocks that control them and can also be asymmetric in terms of the column address required to access each section of the array and its designated pre-fetch field.

Abstract: A multi-bank block architecture for integrated circuit memory devices which effectively reduces the total length of the datapath for a given input/output (I/O) from the memory cells in the memory array to the actual device I/O pad. In accordance with the present, a memory block in a memory device is effectively divided into two or more banks, and between these banks an additional non-shared sense amplifier band is added as a sense amplifier cannot be shared across a bank boundary. Within this multi-bank block, separate data paths are provided for the banks with the column (Y-Select) lines being common.

Abstract: A multi-bank block architecture for integrated circuit memory devices which effectively reduces the total length of the datapath for a given input/output (I/O) from the memory cells in the memory array to the actual device I/O pad. In accordance with the present, a memory block in a memory device is effectively divided into two or more banks, and between these banks an additional non-shared sense amplifier band is added as a sense amplifier cannot be shared across a bank boundary. Within this multi-bank block, separate data paths are provided for the banks with the column (Y-Select) lines being common.

Abstract: An asymmetric data path position and delays technique enabling high speed access in integrated circuit memory devices which is asymmetric in terms of the delay from the array to the I/O buffers based on the position relative within a known starting address of a pre-fetch field. In accordance with the technique of the present invention, the delay is not only asymmetric in terms of its physical length, but also in the number of pipeline stages and the clocks that control them and can also be asymmetric in terms of the column address required to access each section of the array and its designated pre-fetch field.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A circuit provides the widest possible window for capturing data and preventing run-through in a FIFO register. The FIFO register includes two registers per I/O. Two FIFO input clocks are used, one for each FIFO register. When one FIFO clock is active, the other is automatically disabled. Initially, the circuit is reset such that one clock is active, and the other disabled. Upon receiving a valid READ command, a shift chain attached to the FICLK that is currently low begins counting the clock cycles. This eventually determines when the FICLK that is currently low can be enabled. The final enable is dependent upon the turning off the FICLK that is currently high. The FICLK that is enabled during the reset turns off a fixed delay after the falling edge of the YCLK associated with the READ command.

Abstract: A data bus circuit for an integrated circuit memory includes a 4-bit bus per I/O pad that is used to connect the memory with an I/O block, but only two bits per I/O are utilized for writing. Four bits per I/O pad are used for reading. At every falling edge of an input data strobe, the last two bits are transmitted over the bus, which eliminates the need for the precise counting of input data strobe pulses. The data bus circuit is compatible with both DDR1 and DDR2 operating modes.

Abstract: A data bus circuit for an integrated circuit memory includes a 4-bit bus per I/O pad that is used to connect the memory with an I/O block, but only two bits per I/O are utilized for writing. Four bits per I/O pad are used for reading. At every falling edge of an input data strobe, the last two bits are transmitted over the bus, which eliminates the need for the precise counting of input data strobe pulses. The data bus circuit is compatible with both DDR1 and DDR2 operating modes.

Abstract: A clock generator is provided that is compatible with both DDR1 and DDR2 applications. The internal YCLK signal is turned on only when an active read or write occurs on the integrated circuit memory, even though the main chip clock is always running. A circuit block within the clock generator detects when a read or write is active and initiates a YCLK signal on the next falling edge of the internal clock. Two separate mechanisms are used for determining when to terminate the YCLK. One mechanism is a timer path and the other is a path determined by DDR1 and DDR2 control signals. The timer path is strictly time based and is the same for DDR1 and DDR2 parts or modes of operation. The other signal path is different for DDR1 and DDR2 operating modes. A DDR1 control signal turns off YCLK at the next rising edge of the internal clock, and a DDR2 control signal turns off YCLK at the next falling edge of the internal clock.

Abstract: An additive latency circuit for a DDR2 standard compliant integrated circuit memory includes a half flip-flop register assigned for each case of additive latency. A unique clock is generated to control each bit in the register chain. Sufficient register bits are required in the chain to support the highest additive latency specified. For latency settings less than the maximum, those clocks assigned to the bits above the chosen latency are enabled so the data passes through un-clocked. For the additive latency zero case, a separate bypass path is provided. Both address and command information is delayed by the additive latency delay chain. Once delayed by the proper number of cycles, the address information remains in that state until the time when a new state is required. Command information remains valid for one cycle upon reaching the proper delay point. A reset circuit is provided to reset command signals.

Abstract: A clock generator is provided that is compatible with both DDR1 and DDR2 applications. The internal YCLK signal is turned on only when an active read or write occurs on the integrated circuit memory, even though the main chip clock is always running. A circuit block within the clock generator detects when a read or write is active and initiates a YCLK signal on the next falling edge of the internal clock. Two separate mechanisms are used for determining when to terminate the YCLK. One mechanism is a timer path and the other is a path determined by DDR1 and DDR2 control signals. The timer path is strictly time based and is the same for DDR1 and DDR2 parts or modes of operation. The other signal path is different for DDR1 and DDR2 operating modes. A DDR1 control signal turns off YCLK at the next rising edge of the internal clock, and a DDR2 control signal turns off YCLK at the next falling edge of the internal clock.

Abstract: An equalization circuit for a pair of resistive-capacitive data lines includes primary and secondary equalization circuits attached at both ends of the data line pair. A primary equalization circuit at one end of the data line pair receives a primary control signal, and a secondary equalization circuit at the other end of the data line pair receives a secondary control signal, which is different than the primary control signal. The equalization devices in the primary equalization circuit are attached near the read and write amplifiers and operate normally since all the information is available as to whether or not the corresponding data line pair should be equalized. The additional equalization devices in the secondary equalization circuit placed at the other end of the data line pair receive a simpler control signal that lacks the information as to whether or not any particular data line pair is being equalized.

Abstract: A differential amplifier design and bias control technique of particular applicability for low voltage operation in which the threshold voltage of n-channel differential input transistors is controlled using substrate bias in order to allow a wider range of input signal levels. Further disclosed is a technique for controlling the substrate bias of the input transistors of a differential amplifier based on the level of the output of the amplifier in addition to a differential amplifier circuit capable of low voltage operation in which an additional bias current is introduced that enables the output pull-up current to be increased without increasing the pull-down current, as well as circuitry for optimizing the performance of the differential in both DDR-I and DDR-II operational modes.