Patents by Inventor Jon-Hsu Ho
Jon-Hsu Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154015Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.Type: ApplicationFiled: March 22, 2023Publication date: May 9, 2024Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
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Patent number: 11949001Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.Type: GrantFiled: March 21, 2022Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11908919Abstract: A method of manufacturing a semiconductor device includes forming a fin structure in which first semiconductor layers and second semiconductor layers are alternatively stacked; forming a sacrificial gate structure over the fin structure; etching a source/drain (S/D) region of the fin structure, which is not covered by the sacrificial gate structure, thereby forming an S/D space; laterally etching the first semiconductor layers through the S/D space, thereby forming recesses; forming a first insulating layer, in the recesses, on the etched first semiconductor layers; after the first insulating layer is formed, forming a second insulating layer, in the recesses, on the first insulating layer, wherein a dielectric constant of the second insulating layer is less than that of the first insulating layer; and forming an S/D epitaxial layer in the S/D space, wherein the second insulating layer is in contact with the S/D epitaxial layer.Type: GrantFiled: March 12, 2021Date of Patent: February 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chih-Ching Wang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11907636Abstract: A method of generating an IC layout diagram includes receiving a first gate resistance value of a gate region in an IC layout diagram, the first gate resistance value corresponding to a location of a gate via positioned within an active region and along a width of the gate region extending across the active region, determining a second gate resistance value based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.Type: GrantFiled: July 8, 2022Date of Patent: February 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ke-Ying Su, Jon-Hsu Ho, Ke-Wei Su, Liang-Yi Chen, Wen-Hsing Hsieh, Wen-Koi Lai, Keng-Hua Kuo, Kuopei Lu, Lester Chang, Ze-Ming Wu
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Publication number: 20230387240Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20230327025Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal gate. The channel layer has a first horizontal segment, a second horizontal segment, and a vertical segment connects the first horizontal segment and the second horizontal segment. The first horizontal segment and the second horizontal segment extend along a first direction, and the vertical segment extends along a second direction. The vertical segment has a width along the first direction and a thickness along the second direction, and the thickness is greater than the width. The channel layer extends between the first source/drain feature and the second source/drain feature along a third direction. The metal gate wraps channel layer. In some embodiments, the first horizontal segment and the second horizontal segment are nanosheets.Type: ApplicationFiled: March 27, 2023Publication date: October 12, 2023Inventors: Chih-Ching Wang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Zhiqiang Wu
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Publication number: 20230307522Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: ApplicationFiled: April 3, 2023Publication date: September 28, 2023Inventors: Cheng-Yi PENG, Wen-Yuan CHEN, Wen-Hsing HSIEH, Yi-Ju HSU, Jon-Hsu HO, Song-Bor LEE, Bor-Zen TIEN
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Publication number: 20230246026Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall. The structure also includes a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure further includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Chih-Ching WANG, Chun-Chung SU, Chung-Wei WU, Jon-Hsu HO, Kuan-Lun CHENG, Wen-Hsing HSIEH, Wen-Yuan CHEN, Zhi-Qiang WU
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Patent number: 11626400Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall, and a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.Type: GrantFiled: July 16, 2021Date of Patent: April 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Ching Wang, Wen-Yuan Chen, Chun Chung Su, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11621343Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: GrantFiled: July 19, 2021Date of Patent: April 4, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Yi Peng, Wen-Yuan Chen, Wen-Hsing Hsieh, Yi-Ju Hsu, Jon-Hsu Ho, Song-Bor Lee, Bor-Zen Tien
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Patent number: 11616151Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal gate. The channel layer has a first horizontal segment, a second horizontal segment, and a vertical segment connects the first horizontal segment and the second horizontal segment. The first horizontal segment and the second horizontal segment extend along a first direction, and the vertical segment extends along a second direction. The vertical segment has a width along the first direction and a thickness along the second direction, and the thickness is greater than the width. The channel layer extends between the first source/drain feature and the second source/drain feature along a third direction. The metal gate wraps channel layer. In some embodiments, the first horizontal segment and the second horizontal segment are nanosheets.Type: GrantFiled: March 19, 2021Date of Patent: March 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chih-Ching Wang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Zhiqiang Wu
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Publication number: 20230020933Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall, and a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.Type: ApplicationFiled: July 16, 2021Publication date: January 19, 2023Inventors: Chih-Ching WANG, Wen-Yuan CHEN, Chun-Chung SU, Jon-Hsu HO, Wen-Hsing HSIEH, Kuan-Lun CHENG, Chung-Wei WU, Zhiqiang WU
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Patent number: 11508807Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: GrantFiled: November 25, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu Ho, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220367612Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu Ho, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220343054Abstract: A method of generating an IC layout diagram includes receiving a first gate resistance value of a gate region in an IC layout diagram, the first gate resistance value corresponding to a location of a gate via positioned within an active region and along a width of the gate region extending across the active region, determining a second gate resistance value based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Inventors: Ke-Ying SU, Jon-Hsu HO, Ke-Wei SU, Liang-Yi CHEN, Wen-Hsing HSIEH, Wen-Koi LAI, Keng-Hua KUO, KuoPei LU, Lester CHANG, Ze-Ming WU
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Publication number: 20220336614Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.Type: ApplicationFiled: April 15, 2021Publication date: October 20, 2022Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11392749Abstract: A method of generating a netlist of an IC device includes receiving gate region information of the IC device. The gate region information includes a width of the gate region, the width extending at least from a first edge of an active region to a second edge of the active region, a location of a gate via positioned within the active region and along the width, and a first gate resistance value corresponding to the gate region. The method includes determining a second gate resistance value based on the location and the width, and modifying the netlist based on the second gate resistance value.Type: GrantFiled: November 18, 2020Date of Patent: July 19, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ke-Ying Su, Jon-Hsu Ho, Ke-Wei Su, Liang-Yi Chen, Wen-Hsing Hsieh, Wen-Koi Lai, Keng-Hua Kuo, KuoPei Lu, Lester Chang, Ze-Ming Wu
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Publication number: 20220208989Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.Type: ApplicationFiled: March 21, 2022Publication date: June 30, 2022Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220165842Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: ApplicationFiled: November 25, 2020Publication date: May 26, 2022Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu HO, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei WU, Zhiqiang Wu
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Patent number: 11282943Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a fin structure having first semiconductor layers and second semiconductor layers alternately stacked, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region thereby forming an opening exposing at least one second semiconductor layer. The method also includes implanting an etch rate modifying species into the at least one second semiconductor layer though the opening thereby forming an implanted portion of the at least one second semiconductor layer. The method further includes selectively etching the implanted portion of the at least one second semiconductor layer, recessing end portions of the first semiconductor layers exposed in the opening, and forming an S/D epitaxial layer in the opening.Type: GrantFiled: June 15, 2020Date of Patent: March 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu