Abstract: A handheld imaging device has a data receiver that is configured to receive reference encoded image data. The data includes reference code values, which are encoded by an external coding system. The reference code values represent reference gray levels, which are being selected using a reference grayscale display function that is based on perceptual non-linearity of human vision adapted at different light levels to spatial frequencies. The imaging device also has a data converter that is configured to access a code mapping between the reference code values and device-specific code values of the imaging device. The device-specific code values are configured to produce gray levels that are specific to the imaging device. Based on the code mapping, the data converter is configured to transcode the reference encoded image data into device-specific image data, which is encoded with the device-specific code values.

Abstract: A handheld imaging device has a data receiver that is configured to receive reference encoded image data. The data includes reference code values, which are encoded by an external coding system. The reference code values represent reference gray levels, which are being selected using a reference grayscale display function that is based on perceptual non-linearity of human vision adapted at different light levels to spatial frequencies. The imaging device also has a data converter that is configured to access a code mapping between the reference code values and device-specific code values of the imaging device. The device-specific code values are configured to produce gray levels that are specific to the imaging device. Based on the code mapping, the data converter is configured to transcode the reference encoded image data into device-specific image data, which is encoded with the device-specific code values.

Abstract: Systems and methods for the production of a high purity isoamylene product. The isoamylene in a mixed hydrocarbon stream may initially be converted to TAME via etherification, and a subsequent decomposition of the TAME may result in a high purity isoamylene stream with very low impurities that is suitable for a variety of petrochemical applications, such as for use in the production of fragrances, pesticides, peroxides, polymer antioxidants, UV stabilizers and hydrocarbon resins.

Abstract: A handheld imaging device has a data receiver that is configured to receive reference encoded image data. The data includes reference code values, which are encoded by an external coding system. The reference code values represent reference gray levels, which are being selected using a reference grayscale display function that is based on perceptual non-linearity of human vision adapted at different light levels to spatial frequencies. The imaging device also has a data converter that is configured to access a code mapping between the reference code values and device-specific code values of the imaging device. The device-specific code values are configured to produce gray levels that are specific to the imaging device. Based on the code mapping, the data converter is configured to transcode the reference encoded image data into device-specific image data, which is encoded with the device-specific code values.

Abstract: The present disclosure relates to methods of synthesizing moderate length RNAs by splint-mediated ligation of RNA fragments.

Abstract: A memory includes a plurality of one-time programmable (OTP) memory cells, wherein each OTP memory cell includes a corresponding storage element capable of being in a permanently blown state or non-blown state. In the non-blown state, the corresponding storage element is capable of being in a low conductive state (LCS) or high conductive state (HCS). Control circuitry is configured to, in response to a received read request having a corresponding access address which selects a set of OTP memory cells, direct write circuitry to apply a voltage differential across the corresponding storage element of each selected OTP memory cell sufficient to set the corresponding storage element to a predetermined one of the LCS or HCS, and, after the write circuitry applies the voltage differential across the corresponding storage element, direct read circuitry to read the selected OTP memory cells to output read data stored in the selected OTP memory cells.

Abstract: A non-volatile memory includes resistive cells, write circuitry, and write detect circuitry. Each resistive cell has a resistive storage element and is coupled to a corresponding first column line and corresponding second column line. The write circuitry is configured to provide a write current through a resistive storage element of a selected resistive memory cell during a write operation based on an input data value. The write detect circuitry is configured to generate a reference voltage using a voltage at the corresponding first column line coupled to the selected resistive memory cell at an initial time of the write operation, and, during the write operation, after the initial time, provide a write detect signal based on a comparison between the voltage at the corresponding first column line coupled to the selected resistive memory cell and the reference voltage, wherein the input data value is based on the write detect signal.

Abstract: A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

Abstract: Systems and processes disclosed may be used to produce a high purity isobutane stream and a high purity 1-butene stream from mixed C4 streams having disparate starting compositions.

Abstract: A non-volatile memory includes resistive cells, write circuitry, and write detect circuitry. Each resistive cell has a resistive storage element and is coupled to a corresponding first column line and corresponding second column line. The write circuitry is configured to provide a write current through a resistive storage element of a selected resistive memory cell during a write operation based on an input data value. The write detect circuitry is configured to generate a reference voltage using a voltage at the corresponding first column line coupled to the selected resistive memory cell at an initial time of the write operation, and, during the write operation, after the initial time, provide a write detect signal based on a comparison between the voltage at the corresponding first column line coupled to the selected resistive memory cell and the reference voltage, wherein the input data value is based on the write detect signal.

Abstract: Systems and methods for the production of a high purity isoamylene product. The isoamylene in a mixed hydrocarbon stream may initially be converted to TAME via etherification, and a subsequent decomposition of the TAME may result in a high purity isoamylene stream with very low impurities that is suitable for a variety of petrochemical applications, such as for use in the production of fragrances, pesticides, peroxides, polymer antioxidants, UV stabilizers and hydrocarbon resins.

Abstract: A memory includes a plurality of one-time programmable (OTP) memory cells, wherein each OTP memory cell includes a corresponding storage element capable of being in a permanently blown state or non-blown state. In the non-blown state, the corresponding storage element is capable of being in a low conductive state (LCS) or high conductive state (HCS). Control circuitry is configured to, in response to a received read request having a corresponding access address which selects a set of OTP memory cells, direct write circuitry to apply a voltage differential across the corresponding storage element of each selected OTP memory cell sufficient to set the corresponding storage element to a predetermined one of the LCS or HCS, and, after the write circuitry applies the voltage differential across the corresponding storage element, direct read circuity to read the selected OTP memory cells to output read data stored in the selected OTP memory cells.

Abstract: Systems and processes for the efficient conversion of high concentration isoolefin streams to tertiary alkyl ethers are disclosed. The systems and processes may include a feed system to advantageously divide the high concentration isoolefin feed to multiple fixed bed reactors and a catalytic distillation reactor to control the reaction exotherm and achieve a high isoolefin conversion.

Abstract: A container that can be installed and removed from the storage area of a land vehicle. The container rests on the load floor and defines one or more compartments for storing goods. The lid allows for storage on op of the container. The container has outward dimensions that engage the land vehicle to prevent the container from substantially moving in either a lateral or forward/rearward direction.

Abstract: A high-dynamic-range (HDR) camera module with adaptive image data linearization includes (i) an HDR image sensor configured to generate tone-compressed HDR images as respective frames that include active pixel data and metadata, (ii) a processor outside the HDR image sensor, and (iii) a memory outside the HDR image sensor and storing machine-readable instructions that, when executed by the processor, control the processor to: (a) extract, from a frame of a first tone-compressed HDR image, tone-compressed pixel intensities from the active pixel data and a histogram of pre-tone-compression pixel intensities from the metadata, (b) derive, from the tone-compressed pixel intensities and the histogram, a correspondence between tone-compressed pixel intensities and pre-tone-compression pixel intensities, and (c) linearize at least a portion of the active pixel data of either the first tone-compressed HDR image or a subsequent tone-compressed HDR image, according to the correspondence, to produce a linearized HDR ima

Abstract: A memory includes a pair of sense amplifiers where the pair of sense amplifiers perform a multiphase memory operation to read data from two memory cells. Each sense amplifier includes two current paths. During a first phase of the memory read operation, one of the two sense amplifiers provides current through both a first memory cell and a first reference cell and the other sense amplifier of the two provides current through both a second memory cell and a second reference cell. The reference cells each have different resistance values. During a second phase of the memory read operation, one of the sense amplifiers provides current through both of the first memory cell and the second reference cell and the second sense amplifier provides current through the second memory cell and the first reference cell.

Abstract: A memory includes a pair of sense amplifiers where the pair of sense amplifiers perform a multiphase memory operation to read data from two memory cells. Each sense amplifier includes two current paths. During a first phase of the memory read operation, one of the two sense amplifiers provides current through both a first memory cell and a first reference cell and the other sense amplifier of the two provides current through both a second memory cell and a second reference cell. The reference cells each have different resistance values. During a second phase of the memory read operation, one of the sense amplifiers provides current through both of the first memory cell and the second reference cell and the second sense amplifier provides current through the second memory cell and the first reference cell.

Abstract: A memory includes virtual ground circuitry configured to generate a virtual ground voltage (greater than zero volts) at a virtual ground node, a memory array of resistive memory cells in which each resistive memory cell includes a select transistor and a resistive storage element and is coupled to a first column line of a plurality of first column lines, and a first decoder configured to select a set of first column lines for a memory read operation from a selected set of the resistive memory cells. The memory includes read circuitry, and a first column line multiplexer configured to couple each selected first column line of the set of first column lines to the read circuitry during the memory read operation, and configured to couple each unselected first column line of the plurality of first column lines to the virtual ground node during the memory read operation.

Abstract: A memory includes memory cells having two select transistors per cell. Each of the two select transistors are coupled to two different word lines with each word line being controlled by a separate addressable word line driver circuit. In some embodiments, providing two different word lines from two different word line drivers may provide for a memory where the word lines can apply different voltages based on the memory operation being performed.

Abstract: Systems and methods for the production of a high purity isoamylene product. The isoamylene in a mixed hydrocarbon stream may initially be converted to TAME via etherification, and a subsequent decomposition of the TAME may result in a high purity isoamylene stream with very low impurities that is suitable for a variety of petrochemical applications, such as for use in the production of fragrances, pesticides, peroxides, polymer antioxidants, UV stabilizers and hydrocarbon resins.