Patents by Inventor Jonathan A. Bornstein
Jonathan A. Bornstein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11855279Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: GrantFiled: November 11, 2021Date of Patent: December 26, 2023Assignee: Amprius Technologies, Inc.Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Publication number: 20220115650Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: ApplicationFiled: November 11, 2021Publication date: April 14, 2022Applicant: Amprius, Inc.Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Patent number: 11289701Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: GrantFiled: May 13, 2020Date of Patent: March 29, 2022Assignee: Amprius, Inc.Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Publication number: 20200274151Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon-based coating is provided. The silicon coating may include a non-conformal, more porous silicon-rich SiEx layer and a conformal, denser SiEx layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes are used: a PECVD layer to deposit the non-conformal, silicon-rich SiEx layer and a thermal CVD process to deposit the conformal layer. The silicon-rich SiEx material prevents silicon crystalline domain growth, limits macroscopic swelling, increases lithium diffusion rate and enhances significantly battery life during lithium ion battery cycle of charge and discharge.Type: ApplicationFiled: February 21, 2020Publication date: August 27, 2020Inventors: Chentao Yu, Weijie Wang, Constantin Ionel Stefan, Jonathan Bornstein, Daniel Seo
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Publication number: 20200274156Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: ApplicationFiled: May 13, 2020Publication date: August 27, 2020Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Patent number: 10707484Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: GrantFiled: February 2, 2018Date of Patent: July 7, 2020Assignee: Amprius, Inc.Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Publication number: 20190088939Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: ApplicationFiled: February 2, 2018Publication date: March 21, 2019Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Patent number: 9923201Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: GrantFiled: May 12, 2015Date of Patent: March 20, 2018Assignee: Amprius, Inc.Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Publication number: 20150325852Abstract: Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.Type: ApplicationFiled: May 12, 2015Publication date: November 12, 2015Inventors: Weijie Wang, Zuqin Liu, Song Han, Jonathan Bornstein, Constantin Ionel Stefan
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Patent number: 8390100Abstract: Conductive oxide electrodes are described, including a bi-layer barrier structure electrically coupled with an adhesion layer, and an electrode layer, wherein the bi-layer barrier structure includes a first barrier layer electrically coupled with the adhesion layer, and a second barrier layer electrically coupled with the first barrier layer and to the electrode layer. The conductive oxide electrodes and their associated layers can be fabricated BEOL above a substrate that includes active circuitry fabricated FEOL and electrically coupled with the conductive oxide electrodes through an interconnect structure that can also be fabricated FEOL. The conductive oxide electrodes can be used to electrically couple a plurality of non-volatile re-writeable memory cells with conductive array lines in a two-terminal cross-point memory array fabricated BEOL over the substrate and its active circuitry, the active circuitry configured to perform data operations on the memory array.Type: GrantFiled: December 18, 2009Date of Patent: March 5, 2013Assignee: Unity Semiconductor CorporationInventor: Jonathan Bornstein
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Patent number: 8268667Abstract: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the unetched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).Type: GrantFiled: August 23, 2011Date of Patent: September 18, 2012Assignee: Unity Semiconductor CorporationInventors: Darrell Rinerson, Robin Cheung, David Hansen, Steven Longcor, Rene Meyer, Jonathan Bornstein, Lawrence Schloss
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Patent number: 8237142Abstract: A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.Type: GrantFiled: March 1, 2011Date of Patent: August 7, 2012Assignee: Unity Semiconductor CorporationInventors: Robin Cheung, Jonathan Bornstein, David Hansen, Travis Byonghyop Oh, Darrell Rinerson
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Publication number: 20110315948Abstract: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the unetched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).Type: ApplicationFiled: August 23, 2011Publication date: December 29, 2011Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: DARRELL RINERSON, JONATHAN BORNSTEIN, DAVID HANSEN, ROBIN CHEUNG, STEVEN W. LONGCOR, RENE MEYER, LAWRENCE SCHLOSS
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Publication number: 20110315943Abstract: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below un-etched conductive metal oxide layer(s), forming the un-etched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the un-etched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).Type: ApplicationFiled: September 2, 2011Publication date: December 29, 2011Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: DARRELL RINERSON, JONATHAN BORNSTEIN, DAVID HANSEN, ROBIN CHEUNG, STEVEN W. LONGCOR, RENE MEYER, LAWRENCE SCHLOSS
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Publication number: 20110204019Abstract: Chemical mechanical polishing (CMP) of thin film materials using a slurry including a surfactant chemical operative to polish high portions of the film being planarized while preventing the polishing of low portions of the film is disclosed. The low portions can be in a step reduction region of a deposited film. The CMP process can be used for form a planar surface upon which subsequent thin-film layers can be deposited, such as an electrically conductive material for an electrode. The subsequently deposited thin-film layers are substantially planar as deposited without having to use CMP. The resulting thin-film layers are planar and have a uniform cross-sectional thickness that can be beneficial for layers of memory material for a memory cell. The processing can be performed back-end-of-the-line (BEOL) on a previously front-end-of-the-line (FEOL) processed substrate (e.g., silicon wafer) and the BEOL process can be used to fabricate two-terminal non-volatile cross-point memory arrays.Type: ApplicationFiled: November 15, 2010Publication date: August 25, 2011Applicant: UNITY SEMICONDUCTOR CORPORATIONInventors: Jonathan Bornstein, David Hansen, Steven W. Longcor
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Patent number: 8003511Abstract: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOX, LaSrCoOX, LaNiOX, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the unetched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).Type: GrantFiled: December 18, 2009Date of Patent: August 23, 2011Inventors: Darrell Rinerson, Jonathan Bornstein, Robin Cheung, David Hansen, Steven W. Longcor, Rene Meyer, Lawrence Schloss
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Patent number: 7897951Abstract: A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.Type: GrantFiled: July 26, 2007Date of Patent: March 1, 2011Inventors: Darrell Rinerson, Jonathan Bornstein, Robin Cheung, David Hansen, Travis Byonghyop Oh
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Patent number: 7888711Abstract: A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.Type: GrantFiled: June 21, 2010Date of Patent: February 15, 2011Inventors: Robin Cheung, Darrell Rinerson, Travis Byonghyop Oh, Jonathan Bornstein, David Hansen
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Patent number: 7832090Abstract: Chemical mechanical polishing (CMP) of thin film materials using a slurry including a surfactant chemical operative to polish high portions of the film being planarized while preventing the polishing of low portions of the film is disclosed. The low portions can be in a step reduction region of a deposited film. The CMP process can be used for form a planar surface upon which subsequent thin-film layers can be deposited, such as an electrically conductive material for an electrode. The subsequently deposited thin-film layers are substantially planar as deposited without having to use CMP. The resulting thin-film layers are planar and have a uniform cross-sectional thickness that can be beneficial for layers of memory material for a memory cell. The processing can be performed back-end-of-the-line (BEOL) on a previously front-end-of-the-line (FEOL) processed substrate (e.g., silicon wafer) and the BEOL process can be used to fabricate two-terminal non-volatile cross-point memory arrays.Type: GrantFiled: February 25, 2010Date of Patent: November 16, 2010Inventors: Jonathan Bornstein, David Hansen, Steven W. Longcor
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Publication number: 20100155953Abstract: Conductive oxide electrodes are described, including a bi-layer barrier structure electrically coupled with an adhesion layer, and an electrode layer, wherein the bi-layer barrier structure includes a first barrier layer electrically coupled with the adhesion layer, and a second barrier layer electrically coupled with the first barrier layer and to the electrode layer. The conductive oxide electrodes and their associated layers can be fabricated BEOL above a substrate that includes active circuitry fabricated FEOL and electrically coupled with the conductive oxide electrodes through an interconnect structure that can also be fabricated FEOL. The conductive oxide electrodes can be used to electrically couple a plurality of non-volatile re-writeable memory cells with conductive array lines in a two-terminal cross-point memory array fabricated BEOL over the substrate and its active circuitry, the active circuitry configured to perform data operations on the memory array.Type: ApplicationFiled: December 18, 2009Publication date: June 24, 2010Applicant: UNITY SEMICONDUCTOR CORPORATIONInventor: Jonathan Bornstein