Abstract: A reactor for coating particles includes a stationary vacuum chamber to hold a bed of particles to be coated, a vacuum port in an upper portion of the chamber, a chemical delivery system configured to inject a reactant or precursor gas into a lower portion of the chamber, a paddle assembly, and a motor to rotate a drive shaft of the paddle assembly. The lower portion of the chamber forms a half-cylinder. The paddle assembly includes a rotatable drive shaft extending through the chamber along the axial axis of the half cylinder, and a plurality of paddles extending radially from the drive shaft such that rotation of the drive shaft by the motor orbits the plurality of paddles about the drive shaft.

Abstract: A reactor for coating particles includes a stationary vacuum chamber having a lower portion that forms a half-cylinder and an upper portion to hold a bed of particles to be coated, a vacuum port in the upper portion of the chamber, a paddle assembly, a motor to rotate a drive shaft of the paddle assembly, a chemical delivery system to deliver a first fluid, and a first gas injection assembly to receive the first fluid from the chemical delivery system and having apertures configured to inject a first reactant or precursor gas into the lower portion of the chamber and such that the first reactant or precursor gas flows substantially tangent to a curved inner surface of the half-cylinder.

Abstract: Protective coatings on an aerospace component are provided. An aerospace component includes a surface containing nickel, nickel superalloy, aluminum, chromium, iron, titanium, hafnium, alloys thereof, or any combination thereof, and a coating disposed on the surface, where the coating contains a nanolaminate film stack having two or more pairs of a first deposited layer and a second deposited layer. The first deposited layer contains chromium oxide, chromium nitride, aluminum oxide, aluminum nitride, or any combination thereof, the second deposited layer contains aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, yttrium oxide, yttrium nitride, yttrium silicon nitride, hafnium oxide, hafnium nitride, hafnium silicide, hafnium silicate, titanium oxide, titanium nitride, titanium silicide, titanium silicate, or any combination thereof, and the first deposited layer and the second deposited layer have different compositions from each other.

Abstract: Protective coatings on an aerospace component and methods for depositing the protective coatings are provided. A method for depositing a coating on an aerospace component includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a chemical vapor deposition (CVD) process or a first atomic layer deposition (ALD) process and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second ALD process, where the first deposited layer and the second deposited layer have different compositions from each other.

Abstract: A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a vibrational motion in the vacuum chamber sufficient to induce a vibrational motion in the particles held within the vacuum chamber.

Abstract: A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated, wherein the rotary vacuum chamber is coupled to the motors, a controller configured to cause the motors to rotate the rotary vacuum chamber about an axial axis of the rotary vacuum chamber such that the particles undergo tumbling agitation, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the rotary vacuum chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

Abstract: A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated and coupled to the motors, a controller configured to cause the motors to rotate the chamber in a first direction about an axial axis at a rotation speed sufficient to force the particles to be centrifuged against an inner diameter of the chamber, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

Abstract: Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings. In one or more embodiments, a method for depositing a coating on an aerospace component includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a chemical vapor deposition (CVD) process or a first atomic layer deposition (ALD) process and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second ALD process, where the first deposited layer and the second deposited layer have different compositions from each other.

Abstract: A gas distribution assembly for applying a coating on an interior of a plurality of components includes a support with a plurality of component cavities formed within the support. Each component cavity corresponds to a respective component to fluidly couple with an interior of the respective component. A first gas source flow line is fluidly coupled with each of the component cavities to provide a first gas from a first gas source to each of the component cavities, and a second gas source flow line is fluidly coupled with each of the component cavities to provide a second gas from a second gas source to each of the component cavities.

Abstract: Aspects of the present disclosure relate to a master sonography device configured to determine movement parameters describing movement of a master transducer head by a sonographer, and a slave sonography device, remote from the master sonography device, being configured to move a slave transducer head based on the movement parameters received from the master sonography device. The slave sonography device includes a positioning system that is configured to generate patient parameters describing margins of a patient. Aspects of the present disclosure further relate to a mock patient configured to conform to the margins of the patient based on the patient parameters to mimic the patient at the master sonography device during the sonography examination, such that manipulation of the master transducer head applied against the mock patient controls movement of the slave transducer head applied against the patient.

Abstract: A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more metal oxide materials is provided. The method includes the sequential steps of (a) loading the particles comprising the drug into a reactor, (b) applying a vaporous or gaseous metal precursor to the particles in the reactor, (c) performing one or more pump-purge cycles of the reactor using inert gas, (d) applying a vaporous or gaseous oxidant to the particles in the reactor, and (e) performing one or more pump-purge cycles of the reactor using inert gas. The temperature of the particles does not exceed 35° C. This produces a pharmaceutical composition comprising a drug containing core enclosed by one or more metal oxide materials.

Abstract: Aspects of the present disclosure include embodiments of a positioning device and a method for using the same. The method may comprise applying pressure during an ultrasound examination. Embodiments of the disclosed positioning device include an arch configuration and an arm configuration to span across a gurney and over a patient on the gurney, the arch including a track that spans at least part of a length the arch, and an instrument attachment attached to the track of the arch, or an arm with multiple joints with an instrument attachment attached to the distal end of the arm, which serves to assist the motions of the user. The instrument attachment is configured to hold an instrument, such as an ultrasound transducer, and may extend the instrument toward the patient, such as to apply pressure to the patient during an ultrasound examination.

Abstract: An artificial intelligence engine may receive a plurality of values from a corresponding plurality of heterogeneous sensors and audio/visual data from a microphone/camera, respectively, corresponding to the detection of motion of an object located in the audio/visual data. The artificial intelligence engine may evaluate context of the plurality of values from the corresponding plurality of heterogeneous sensors and the audio/visual data from the microphone/camera, respectively, in view of one or more past values from the plurality of sensors and one or more past frames of audio/visual data from the microphone/camera, respectively. In response to the evaluated context indicating that the motion of the object is suspicious with a probability equal to or above a level, the artificial intelligence engine triggers an alert indicating that a suspicious event has occurred.

Abstract: Responsive to a processor of a first intercom unit establishing a wireless data channel with one or more second intercom units of a plurality of intercom units in a wireless network, and responsive to an encoder of the first intercom unit repeatedly encoding, during a repeated time interval, data to be transmitted to the one or more second intercom units over the wireless data channel while pausing the wireless data channel such that the first intercom unit does not transmit the encoded data during the repeated time interval, the processor may receive an indication to un-pause the wireless data channel. A network controller of the first intercom unit may wirelessly transmit the data last encoded by the encoder during the repeated time interval to the one or more second intercom units.

Abstract: Responsive to a processor of a first intercom unit establishing a wireless data channel with one or more second intercom units of a plurality of intercom units in a wireless network, and responsive to an encoder of the first intercom unit repeatedly encoding, during a repeated time interval, data to be transmitted to the one or more second intercom units over the wireless data channel while pausing the wireless data channel such that the first intercom unit does not transmit the encoded data during the repeated time interval, the processor may receive an indication to un-pause the wireless data channel. A network controller of the first intercom unit may wirelessly transmit the data last encoded by the encoder during the repeated time interval to the one or more second intercom units.

Abstract: In some embodiments, a module is provided that is configured to clean, rinse and dry a substrate. The module includes (1) a tank having an upper tank region positioned above a lower tank region, the upper tank region having (a) an opening through which a substrate is removed from the tank; (b) a first fluid supply configured to supply a first fluid to a surface of a substrate being removed from the tank; and (c) a first suction mechanism, positioned below the first fluid supply, wherein the first suction mechanism is configured to suction fluid supplied from the first fluid supply so as to deter the suctioned fluid from reaching the lower tank region; and (2) a drying vapor supply positioned above the first fluid supply and configured to supply a drying vapor to a surface of a substrate being removed from the tank. Numerous other aspects are provided.

Abstract: A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: An apparatus for fabricating an integrated circuit device comprises an enclosure housing a processing chamber and having a gas inlet for receiving process gases into the processing chamber and a gas outlet for discharging the process gases. A pedestal is disposed within the processing chamber for supporting a wafer thereon. A chamber liner at least partially surrounds the pedestal and includes inner and outer portions. The inner portion comprises a material that is substantially resistant to the process gases at temperatures of at least about 400° C. The outer portion comprises an insulating material for decreasing a thermal gradient between the perimeter of the wafer and the enclosure.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.