Abstract: A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.

Abstract: Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.

Abstract: The present invention provides method of scribing a multilayer panel. The method comprises (a) providing a multilayer panel comprising a substrate layer, a transparent conductive layer disposed thereupon, a first semiconducting layer disposed upon the transparent conductive layer; (b) configuring the multilayer panel relative to a laser machining device, the machining device comprising a laser head and an optical sensor; (c) inducing a motion of the laser head relative to the multilayer panel such that a laser beam contacts the panel along a transverse line across the panel, the laser beam incident upon the panel having sufficient energy to ablate one or more layers of the multilayer panel within a zone irradiated by the laser beam irradiated to provide a scribed panel; (d) simultaneously irradiating the scribed panel with a first light source; and (e) detecting the light emerging from the scribed panel at the optical sensor in real time. Also provided is a system for scribing a multilayer panel.

Abstract: Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.

Abstract: Methods are generally provided of reducing speckle of a laser beam from a laser source guided through an optical waveguide. The method includes vibrating an optical waveguide at a first point along the optical waveguide at a first frequency (e.g., having a range of about 20 kHz to about 20 GHz) for a certain distance (e.g., a distance of about 0.1 mm to about 5 cm), and directing the laser beam out of the optical waveguide from the laser source to a target. Such methods are particularly useful for scribing a thin film layer on a photovoltaic module (e.g., a cadmium telluride-based thin film photovoltaic device). Fiber optic laser systems are also generally provided for reducing speckle of a laser beam from a laser source guided through an optical waveguide.

Abstract: Disclosed is a photovoltaic cell, a method of forming the photovoltaic cell, and a system for forming the photovoltaic cell. The photovoltaic cell includes a plurality of layers, at least one scribe disposed within the plurality of layers, and sidewalls delineating the scribe from the plurality of layers. At least a portion of the sidewalls includes material properties substantially consistent with the plurality of layers.

Abstract: A method for forming a transparent electrically conductive layer. The method includes providing a layer comprising cadmium, tin, and oxygen. Concentrated electromagnetic energy is directed from an energy source to at least one portion of the layer to locally heat the at least a portion of the layer. The layer is crystallized to a cadmium-tin oxide ceramic. A photovoltaic cell having the laser crystallized cadmium-tin oxide ceramic and a composition of matter are also disclosed.

Abstract: A method for forming a reduced conductive area in transparent conductive. The method includes providing a transparent, electrically conductive, chemically reducible material. A reducing atmosphere is provided and concentrated electromagnetic energy from an energy source is directed toward a portion of the transparent, electrically conductive, chemically reducible material to form a reduced conductive area. The reduced conductive area has greater electrical conductivity than the transparent, electrically conductive, chemically reducible material. A thin film article and photovoltaic module are also disclosed.

Abstract: A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.

Abstract: An improved method of forming an intrinsic polarizer, referred to as a K-type polarizer, includes stretching a polymeric film a first stretching step. The polymeric film comprises a hydroxylated linear polymer which is converted after the first stretching step to form dichroic, copolymer polyvinylene blocks aligned in the polymeric film. The polymeric film is stretched in a second stretching step while converting the hydroxylated linear polymer. This method produces an improved K-type polarizer with excellent polarizing and color characteristics. For example, the dichroic ratio is higher than 100, the color shift for light passed through the polarizer in a crossed configuration is low, and the absorption of light in the blue region of the visible spectrum is more than one half of the absorption for light in the middle of the visible spectrum.