Abstract: Methods, systems, and devices for adaptive throughput monitoring are described. In some examples, a memory system may be associated with one or more clocks that are each associated with a respective subcomponent. When the memory system receives a plurality of commands, the memory system may determine a throughput of the commands. Based on the determined throughput, the memory system may adjust a rate of one or more of the clocks.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a reset signal from a host computer system in communication with the memory system; identify, by decoding the reset signal, a host event specified by the reset signal; and process the identified host event.

Abstract: Methods, systems, and devices for power architecture for non-volatile memory are described. A memory device may be configured to operate in a first mode and a second mode (e.g., a low power mode). When operating in the first mode, a voltage may be supplied from a power source (e.g., a power management integrated circuit) to a memory array and one or more associated components via a regulator. When the memory device transitions to operate in the second mode, some of the components supplied from the power source may be powered by a charge pump. Control information associated with the memory array may be stored to the one or more components (e.g., to a cache) that are powered by a charge pump.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a reset signal from a host computer system in communication with the memory system; identify, by decoding the reset signal, a host event specified by the reset signal; and process the identified host event.

Abstract: Methods, systems, and devices for compressed logical-to-physical mapping for sequentially stored data are described. A memory device may use a hierarchical set of logical-to-physical mapping tables for mapping logical block address generated by a host device to physical addresses of the memory device. The memory device may determine whether all of the entries of a terminal logical-to-physical mapping table are consecutive physical addresses. In response to determining that all of the entries contain consecutive physical addresses, the memory device may store a starting physical address of the consecutive physical addresses as an entry in a higher-level table along with a flag indicating that the entry points directly to data in the memory device rather than pointing to a terminal logical-to-physical mapping table. The memory device may, for subsequent reads of data stored in one or more of the consecutive physical addresses, bypass the terminal table to read the data.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

Abstract: Methods, systems, and devices supporting techniques for memory system configuration using a queue refill time are described. A memory system may receive a command from a host system and may add the command to a command queue including a set of commands to be executed by the memory system. The memory system may determine a queue refill time of the command queue using measurements for at least one queue tag of the command queue and may adjust at least one resource of the command queue in response to the determined queue refill time. In some examples, the memory system may reallocate processing or memory resources previously allocated to the command queue, deactivate processing or memory resources previously allocated to the command queue, adjust a threshold queue depth for the command queue, or any combination thereof, among other options, based on the queue refill time.

Abstract: Memory device might include a controller configured to cause the memory device to determine whether the memory device is waiting to initiate a next phase of an access operation, and in response to determining that the memory device is waiting to initiate the next phase, determine whether there is sufficient available current budget to initiate the next phase in a selected operating mode in response to at least the priority token of the memory device, an expected peak current magnitude for the next phase in the selected operating mode, and additional expected peak current magnitudes for other memory devices. In response to determining that there is sufficient available current budget to initiate the next phase in the selected operating mode, the memory device might output the expected peak current magnitude for the next phase in the selected operating mode from the memory device.

Abstract: Exemplary methods, apparatuses, and systems include a first die in a power network receiving, from each die of a plurality of dice in the power network, a first signal indicating that the respective die of the plurality of dice is in a high current state or a second signal indicating that the respective die of the plurality of dice is an active current state. The received signals include at least one second signal. The first die determines, based upon the received signals, a number of dice of the plurality of dice that are currently active and selects an activity threshold based upon that number. The first die further determines an activity level for the power network and transmits, to the plurality of dice, the first signal indicating that the first die is in the high current state in response to determining that the activity level is less than the activity threshold.

Abstract: Methods, systems, and devices for shallow hibernate power state are described. A memory system may include a memory array and a controller. The memory system may transition from a first power state having a first current to a second power state having a second current less than the first current, where the first power state is associated with executing received commands and the second power state is associated with deactivating one or more components of the memory array. The memory system may initiate a timer after transitioning from the first power state to the second power state. The memory system may determine the timer satisfies a threshold and transition from the second power state to a third power state having a third current less than the second current based on the timer satisfying the threshold.

Abstract: Methods, systems, and devices for host recovery for a stuck condition of a memory system are described. The host system may transmit a first command for the memory system to transition from a first power mode to a second power mode (e.g., low-power mode). In some cases, the host system may transmit a second command for the memory system to exit the second power mode shortly after transmitting the first command. The host system may activate a timer associated with a time-out condition for exiting the second power mode and may determine that a duration indicated by the timer expires. In some examples, the host system may transmit a third command for the memory system to perform a hardware reset operation based on determining that the duration of the timer expires.

Abstract: Methods, systems, and devices for redundant array management techniques are described. A memory system may include a volatile memory device, a non-volatile memory device, and one or more redundant arrays of independent nodes. The memory system may include a first redundant array controller and a second redundant array controller of a redundant array of independent nodes. The memory system may receive a write command associated with writing data to a type of memory cell. Based on the type of memory cell, the memory system may generate parity data corresponding to the data using one or both of the first redundant array controller and the second redundant array controller. In some examples, the first redundant array controller may be configured to generate parity data associated with a first type of failure and the second redundant array controller may be configured to generate parity data associated with a second type of failure.

Abstract: Methods, systems, and devices for memory read performance techniques are described. A memory system may receive a sequence of read commands. Based on detecting a set of consecutive read commands, the memory system may pre-read data from a second logical block address (LBA) in a non-volatile memory device to a volatile memory device based on receiving a first read command that includes a first LBA, where the second LBA is consecutive with the first LBA. The memory system may subsequently receive a second read command that includes the second LBA, and read out the second data without performing an additional access operation of the non-volatile storage device. In some examples, using such a pre-read, the memory system may capable of returning data in a different order than the order in which the commands were received.

Abstract: A method for performing a copyback procedure is described. The method includes determining to move first encoded data from a first location in a memory die to a second location. In response to determining to move the first encoded data from the first location to the second location, a starting seed, which is associated with the first location, is combined with a destination seed, which is associated with the second location, to produce a combined seed. Based on the combined seed, the method determines a pseudorandom sequence based on the combined seed and a pseudorandom sequence table, wherein the pseudorandom sequence table maps seed values to pseudorandom sequences and the determined pseudorandom sequence maps to the combined seed in the pseudorandom sequence table. The method further combines the first encoded data with the pseudorandom sequence to produce second encoded data for storage in the second location.

Abstract: Methods, systems, and devices for volatile register to detect power loss are described. The memory system may receive a command to enter a first power mode having a lower power consumption than a second power mode. The memory system may store data in a register associated with the memory system before entering the first power mode (e.g., a low-power mode). The memory system may receive a command to exit the first power mode. The memory system may determine whether the data stored in the register includes one or more errors. The memory system may select a reset operation to perform to exit the first power mode based on determining whether the data stored in the register includes one or more errors.

Abstract: Methods, systems, and devices for topology-based retirement in a memory system are described. In some examples, a memory system or memory device may be configured to evaluate error conditions relative to a physical or electrical organization of a memory array, which may support inferring the presence or absence of defects in one or more structures of a memory device. For example, based on various evaluations of detected errors, a memory system or a memory device may be able to infer a presence of a short-circuit, an open circuit, a dielectric breakdown, or other defects of a memory array that may be related to wear or degradation over time, and retire a portion of a memory array based on such an inference.

Abstract: Methods, systems, and devices for power architecture for non-volatile memory are described. A memory device may be configured to operate in a first mode and a second mode (e.g., a low power mode). When operating in the first mode, a voltage may be supplied from a power source (e.g., a power management integrated circuit) to a memory array and one or more associated components via a regulator. When the memory device transitions to operate in the second mode, some of the components supplied from the power source may be powered by a charge pump. Control information associated with the memory array may be stored to the one or more components (e.g., to a cache) that are powered by a charge pump.

Abstract: Methods, systems, and devices for power architecture for non-volatile memory are described. A memory device may be configured to operate in a first mode and a second mode (e.g., a low power mode). When operating in the first mode, a voltage may be supplied from a power source (e.g., a power management integrated circuit) to a memory array and one or more associated components via a regulator. When the memory device transitions to operate in the second mode, some of the components supplied from the power source may be powered by a charge pump. Control information associated with the memory array may be stored to the one or more components (e.g., to a cache) that are powered by a charge pump.

Abstract: Memory devices, system, and methods for operating the same are provided. The memory device can comprise a non-volatile memory array and control circuitry. The control circuitry can be configured to store a value corresponding to a number of activate commands received at the memory device, update the value in response to receiving an activate command received from a host device, and trigger, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device. The control circuitry can be further configured to store a second value corresponding to a number of refresh operations performed by the memory device, update the second value in response to performing a refresh operation, and trigger, in response to the value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

Abstract: Methods, systems, and devices that support signaling mechanisms for bus inversion are described. A control signal that supports transferring information from a first controller to a second controller via a bus may also be configured to indicate whether or not data that is communicated over the bus is inverted. The control signal may be a control signal that enables reception of control information at the second controller. The control signal may be controlled by the first controller when data is transmitted to the second controller and may be controlled by the second controller when data is transmitted to the first controller.