Abstract: Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir.

Abstract: Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.

Abstract: Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed.

Abstract: Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide methods for passivating graphene nanoelectronic devices, which enable stacking of multiple graphene devices and the creation of high density graphene based circuits. Other embodiments provide methods for producing devices with graphene layer segments having multiple thicknesses.

Abstract: A nanotube based microstrip antenna element is provided along with arrays of same. The nanotube based microstrip antenna element comprises a dielectric substrate layer sandwiched between a ground plane layer and a conductive nanotube layer, the conductive nanotube layer shaped to form a radiating structure. In more advanced embodiments, the nanotube based microstrip antenna element further includes an integrated two terminal nanotube switch device such as to provide a selectability function to such microstrip antenna elements and reconfigurable arrays of same. Anisotropic nanotube fabric layers are also used to provide substantially transparent microstrip antenna structures which can be deposited over display screens and the like.

Abstract: Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includes providing an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material.

Abstract: Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

Abstract: Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.

Abstract: Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir.

Abstract: Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

Abstract: Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.

Abstract: Device design methods for use with non-volatile nanotube switches are disclosed. In a first aspect of the present disclosure, a plurality of nonconductive nanoparticles is adhered to a nanotube element such as to provide an isolation barrier from a control electrode and further provide a switching gap above that element. In a second aspect of the present disclosure, conductive nanoparticles are dispersed and adhered to either a control electrode or to a nanotube element positioned over said electrode element such that the interface area (that is, the area of the nanotube element which comes into contact with the control electrode) is minimized. In a third aspect of the present disclosure, a monolayer network of nonconductive nanotubes is used to provide an isolation barrier between a control electrode and a nanotube element. Voids or spaces in said monolayer network further provides switching gaps.

Abstract: Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation.

Abstract: Under one aspect, a resonator 400 includes a nanotube element 410 including a non-woven fabric of unaligned nanotubes and having a thickness, and a support structure 404 defining a gap 406 over which the nanotube element 410 is suspended, the thickness of the nanotube element 410 and the length of the gap 406 being selected to provide a pre-specified resonance frequency for the resonator 400 The resonator 400 also includes a conductive element 412 in electrical contact with the nanotube element 410, a drive electrode 408 in spaced relation to the nanotube element 410, and power logic in electrical contact with die at least one drive electrode 408 The power logic provides a series of electrical pulses at a frequency selected to be about the same as the pre-specified resonance frequency of the resonator 400 to the drive electrode 408 during operation of the resonator 400, such that the nanotube element 410 responds to the series of electrical pulses applied to the drive electrode 408 by making a series of mecha

Abstract: Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.

Abstract: Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.

Abstract: Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation.

Abstract: NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F2 memory cell density is achieved.

Abstract: Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.

Abstract: Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density.