Patents by Inventor Jonathan Westwater

Jonathan Westwater has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210362183
    Abstract: Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.
    Type: Application
    Filed: August 5, 2021
    Publication date: November 25, 2021
    Inventors: Florian Pschenitzka, Jonathan Westwater
  • Patent number: 11117163
    Abstract: Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: September 14, 2021
    Assignee: Cambrios Film Solutions Corporation
    Inventors: Florian Pschenitzka, Jonathan Westwater
  • Publication number: 20190224713
    Abstract: Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.
    Type: Application
    Filed: April 3, 2019
    Publication date: July 25, 2019
    Inventors: Florian Pschenitzka, Jonathan Westwater
  • Patent number: 10307786
    Abstract: Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.
    Type: Grant
    Filed: November 4, 2016
    Date of Patent: June 4, 2019
    Assignee: Cambrios Film Solutions Corporation
    Inventors: Florian Pschenitzka, Jonathan Westwater
  • Patent number: 9776209
    Abstract: Method of manufacturing a transparent electrically conductive substrate having an application process whereby a wet layer is formed by applying onto a substrate film a coating liquid comprising metallic nanowires dispersed in a solvent, and a drying process whereby the solvent contained in the abovementioned wet layer is removed by drying, characterised in that the abovementioned drying process includes a process whereby the orientation of the abovementioned metallic nanowires is altered by introducing a forced draft facing towards the substrate from a direction that is different from the longitudinal direction of the substrate film.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: October 3, 2017
    Assignees: OKURA INDUSTRIAL CO., LTD., CAM HOLDING CORPORATION
    Inventors: Takashi Mishima, Keisuke Goto, Florian Pschenitzka, Jonathan Westwater
  • Publication number: 20170050216
    Abstract: Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.
    Type: Application
    Filed: November 4, 2016
    Publication date: February 23, 2017
    Inventors: Florian Pschenitzka, Jonathan Westwater, JR.
  • Patent number: 9573163
    Abstract: Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: February 21, 2017
    Assignee: CAM Holding CORPORATION
    Inventors: Florian Pschenitzka, Jonathan Westwater
  • Publication number: 20150321220
    Abstract: [Problem] To improve the anisotropy of transparent electrically conductive substrates that employ metallic nanowires. [Means of overcoming the problem] Method of manufacturing a transparent electrically conductive substrate having an application process whereby a wet layer is formed by applying onto a substrate film a coating liquid comprising metallic nanowires dispersed in a solvent, and a drying process whereby the solvent contained in the abovementioned wet layer is removed by drying, characterised in that the abovementioned drying process includes a process whereby the orientation of the abovementioned metallic nanowires is altered by introducing a forced draft facing towards the substrate from a direction that is different from the longitudinal direction of the substrate film.
    Type: Application
    Filed: February 16, 2012
    Publication date: November 12, 2015
    Applicants: CAMBRIOS TECHNOLOGIES CORPORATION, OKURA INDUSTRIAL CO., LTD.
    Inventors: Takashi Mishima, Keisuke Goto, Florian Pschenitzka, Jonathan Westwater
  • Publication number: 20140202738
    Abstract: Disclosed herein are transparent conductors having high thermal capacity and improved protection against electrostatic discharge.
    Type: Application
    Filed: January 22, 2014
    Publication date: July 24, 2014
    Applicant: Cambrios Technologies Corporation
    Inventors: Pierre-Marc Allemand, Paul Mansky, Florian Pschenitzka, Michael A. Spaid, Jonathan Westwater
  • Publication number: 20130040106
    Abstract: Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.
    Type: Application
    Filed: June 27, 2012
    Publication date: February 14, 2013
    Applicant: CAMBRIOS TECHNOLOGIES CORPORATION
    Inventors: Florian Pschenitzka, Jonathan Westwater
  • Publication number: 20050085099
    Abstract: To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N+ doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film. In this state, a laser beam is radiated. The N+ doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature.
    Type: Application
    Filed: October 29, 2004
    Publication date: April 21, 2005
    Inventors: Dharam Pal Gosain, Jonathan Westwater, Miyako Nakagoe, Setsuo Usui
  • Patent number: 6794673
    Abstract: An amorphous silicon thin film includes a plastic substrate as a base, and insulating layers are formed thereon each radiated with a pulse laser beam which removes volatile contaminants like a resist as a pretreatment. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. it is possible to increase energy intensity of energy beam radiated for the polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
    Type: Grant
    Filed: December 11, 2001
    Date of Patent: September 21, 2004
    Assignee: Sony Corporation
    Inventors: Dharam Pal Gosain, Jonathan Westwater, Miyako Nakagoe, Setsuo Usui, Kazumasa Nomoto
  • Publication number: 20030207507
    Abstract: To enable radiating an optimum energy beam depending upon the structure of a substrate (whether a metallic film is formed or not) when an amorphous semiconductor film is crystallized and uniformly crystallizing the overall film, first, a photoresist film and the area of an N− doped amorphous silicon film on the photoresist film are selectively removed by a lift-off method. Hereby, the amorphous silicon film is thicker in an area except an area over a metallic film (a gate electrode) than in the area over the metallic film In this state, a laser beam is radiated. The N− doped amorphous silicon film and an amorphous silicon film are melted by radiating a laser beam and afterward, melted areas are crystallized by cooling them to room temperature.
    Type: Application
    Filed: June 2, 2003
    Publication date: November 6, 2003
    Inventors: Dharam Pal Gosain, Jonathan Westwater, Miyako Nakagoe, Setsuo Usui
  • Publication number: 20020068390
    Abstract: A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well.
    Type: Application
    Filed: December 11, 2001
    Publication date: June 6, 2002
    Inventors: Dharam Pal Gosain, Jonathan Westwater, Miyako Nakagoe, Setsuo Usui, Kazumasa Nomoto
  • Publication number: 20020048869
    Abstract: A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well.
    Type: Application
    Filed: July 16, 1998
    Publication date: April 25, 2002
    Inventors: DHARAM PAL GOSAIN, JONATHAN WESTWATER, MIYAKO NAKAGOE, SETSUO USUI, KAZUMASA NOMOTO
  • Patent number: 6376290
    Abstract: A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well.
    Type: Grant
    Filed: July 16, 1998
    Date of Patent: April 23, 2002
    Assignee: Sony Corporation
    Inventors: Dharam Pal Gosain, Jonathan Westwater, Miyako Nakagoe, Setsuo Usui, Kazumasa Nomoto
  • Publication number: 20020000242
    Abstract: A method for manufacturing a thin-film semiconductor device configured to form the thin-film semiconductor device on a first substrate and thereafter transfer the thin-film semiconductor device from the first substrate to a second substrate, comprises the steps of: forming a porous layer containing a separation layer on the first substrate; forming the thin-film semiconductor device on the porous layer; and after bonding the second substrate different from the first substrate in contraction coefficient by cooling onto the thin-film semiconductor device, cooling the product by cooling means to produce a shear stress in the separation layer in the porous layer and to separate the thin-film semiconductor device from the first substrate along the separation layer.
    Type: Application
    Filed: February 8, 2000
    Publication date: January 3, 2002
    Inventors: Takeshi Matushiita, Miyako Nakagoe, Jonathan Westwater, Misao Kusunoki, Kazushi Yamauchi
  • Patent number: 6285055
    Abstract: While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.
    Type: Grant
    Filed: November 29, 1999
    Date of Patent: September 4, 2001
    Assignee: Sony Corporation
    Inventors: Dharam Pal Gosain, Kazumasa Nomoto, Jonathan Westwater, Miyako Nakagoe, Setsuo Usui, Takashi Noguchi, Yoshifumi Mori
  • Patent number: 6130142
    Abstract: While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
    Type: Grant
    Filed: August 18, 1999
    Date of Patent: October 10, 2000
    Assignee: Sony Corporation
    Inventors: Jonathan Westwater, Dharam Pal Gosain, Miyako Nakagoe, Setsuo Usui
  • Patent number: 6130143
    Abstract: While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450.degree.-650.degree. C. in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.
    Type: Grant
    Filed: August 18, 1999
    Date of Patent: October 10, 2000
    Assignee: Sony Corporation
    Inventors: Jonathan Westwater, Dharam Pal Gosain, Miyako Nakagoe, Setsuo Usui