Patents by Inventor Jong-Cheol Lee

Jong-Cheol Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 1,3,5-Triazine-2,4,6-Triamine Compound or Pharmaceutical Acceptable Salt Thereof, and Pharmaceutical Composition Comprising the Same
    Publication number: 20110237587
    Abstract: Disclosed herein are a 1,3,5-triazine-2,4,6-triamine compound or a pharmaceutically acceptable salt thereof, a preparation method thereof, and a composition for preventing or treating metabolic syndromes, diabetes, or cancers with deletion of P53 gene, which comprises the same.
    Type: Application
    Filed: August 28, 2008
    Publication date: September 29, 2011
    Applicants: HANALL PHARMACEUTICAL COMPANY, LTD, KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Hyae Gyeong Cheon, Kwang-Rok Kim, Sang Dal Rhee, Won Hoon Jung, Jong-Cheol Lee, Sung Wuk Kim, Sung Soo Jun
  • BIODEGRADABLE MATERIAL FOR ADVERTISEMENT AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110236617
    Abstract: Disclosed are a material for advertisement and a method for manufacturing the same. The material for advertisement includes a surface film layer, a pressure-sensitive adhesive layer and a release layer stacked in sequence, in which the surface film layer is composed of a biodegradable film layer containing 5 to 40 wt % of a biodegradable polymer and 95 to 60 wt % of an aliphatic polyester. The material including the biodegradable film layer can be used for print advertisement to be discarded after being used for a short period of time, and has biodegradability of 60% or more as compared with cellulose within six months when discarded, so that a toxic environmental hormone due to polyvinylchloride (PVC) is not emitted, and the environment is protected, thereby being very friendly toward humans and the earth.
    Type: Application
    Filed: November 13, 2009
    Publication date: September 29, 2011
    Applicant: LG HAUSYS, LTD.
    Inventors: Sun-Kil Hong, Jong-Cheol Lee, Youn-Woo Nam
  • METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE AND CAPACITOR OF SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
    Publication number: 20110237043
    Abstract: A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern.
    Type: Application
    Filed: March 25, 2011
    Publication date: September 29, 2011
    Inventors: Wandon KIM, Jong Cheol Lee, Jin Yong Kim, Beom Seok Kim, Yong-Suk Tak, Kyuho Cho, Ohseong Kwon
  • METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING MULTILAYER DIELECTRIC LAYERS
    Publication number: 20110230056
    Abstract: Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.
    Type: Application
    Filed: February 2, 2011
    Publication date: September 22, 2011
    Inventors: Kil-chul Kim, Jong-cheol Lee, Ki-vin Im, Jae-hyun Yeo
  • INTEGRATED CIRCUIT DEVICES INCLUDING COMPLEX DIELECTRIC LAYERS AND RELATED FABRICATION METHODS
    Publication number: 20110227143
    Abstract: An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.
    Type: Application
    Filed: March 8, 2011
    Publication date: September 22, 2011
    Inventors: Jong-cheol Lee, Ki-yeon Park, Chun-hyung Chung, Cha-young Yoo
  • N1-BENZO[1,3]DIOXOL-5-YLMETHYL-N2-SUBSTITUTED BIGUANIDE DERIVATIVE, PREPARATION METHOD THEREOF, AND PHARMACEUTICAL COMPOSITION CONTAINING SAME
    Publication number: 20110207810
    Abstract: The present invention provides an N1-benzo[1,3]dioxol-5-ylmethyl-N2-substituted biguanide derivative of formula (I) or a pharmaceutically acceptable salt thereof, a method for preparing same, and a pharmaceutical composition comprising same as an active ingredient. The inventive N1-benzo[1,3]dioxol-5-ylmethyl-N2-substituted biguanide derivative exhibits improved blood glucose level- and lipid level-lowering effects even with a reduced dosage as compared to conventional drugs, and thus, it is useful for preventing or treating diabetes, metabolic syndromes such as insulin-independent diabetes, obesity and atherosclerosis, or a P53 gene defect-related cancer.
    Type: Application
    Filed: October 13, 2009
    Publication date: August 25, 2011
    Applicants: HANALL BIOPHARMA CO., LTD., KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Sung Wuk Kim, Sung Soo Jun, Hyae Gyeong Cheon, Kwang Rok Kim, Sang Dal Rhee, Won Hoon Jung, Jong Cheol Lee
  • N 1-2-THIOPHENE-2-YLETHYL-N2-SUBSTITUTED BIGUANIDE DERIVATE, PREPARATION METHOD THEREOF, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME AS ACTIVE INGREDIENTS
    Publication number: 20110196015
    Abstract: The present invention provides an N1-2-thiophen-2-ylethyl-N2-substituted biguanide derivative of formula (I) or a pharmaceutically acceptable salt thereof, a method for preparing same, and a pharmaceutical composition comprising same as an active ingredient. The inventive N1-2-thiophen-2-ylethyl-N2-substituted biguanide derivative exhibits improved blood glucose level- and lipid level-lowering effects even with a reduced dosage as compared to conventional drugs, and thus, it is useful for preventing or treating diabetes, metabolic syndromes such as insulin-independent diabetes, obesity and atherosclerosis, or a P53 gene defect-related cancer.
    Type: Application
    Filed: October 13, 2009
    Publication date: August 11, 2011
    Applicants: HANALL BIOPHARMA CO., LTD., KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Sung Wuk Kim, Sung Soo Jun, Hyae Gyeong Cheon, Kwang Rok Kim, Sang Dal Rhee, Won Hoon Jung, Jong Cheol Lee
  • METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING CONTACT PLUG
    Publication number: 20110183512
    Abstract: A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.
    Type: Application
    Filed: June 4, 2010
    Publication date: July 28, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-Il Cho, Nam-Gun Kim, Jong-Cheol Lee
  • Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films
    Patent number: 7939872
    Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: May 10, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Cheol Lee, Sang-Yeol Kang, Ki-Vin Lim, Hoon-Sang Choi, Eun-Ae Chung
  • METHODS OF FORMING A METAL SILICATE LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE METAL SILICATE LAYER
    Publication number: 20110104907
    Abstract: Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.
    Type: Application
    Filed: October 22, 2010
    Publication date: May 5, 2011
    Inventors: Jong-cheol LEE, Ki-yeon PARK, Se-hoon OH, Youn-soo KIM
  • Artificial marble using multicolor chip and method for preparing the same
    Patent number: 7935281
    Abstract: Disclosed herein are an artificial marble using multicolor chips, particularly striped chips, and a method for preparing the artificial marble. Since the artificial marble comprises multicolor chips in a new form together with conventional single-color chips, it enables achievement of various appearances, including designs and colors, thereby being highly differentiated from conventional artificial marbles containing combination of single-color chips as well as displaying patterns and designs closely resembling natural granite.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: May 3, 2011
    Assignee: LG Chem, Ltd.
    Inventors: Min-Chul Sung, Bong-Hyun Kwon, Jae-Ho Oh, Won-Gu Choi, Jong-Cheol Lee
  • PHASE-CHANGE MEMORY DEVICE
    Publication number: 20110073832
    Abstract: A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the second structure including a metal nitride material, and including a lower part having a greater width than an upper part, and a third structure including a metal nitride material containing an element X, the third structure being on the second structure, the element X including at least one selected from the group of silicon, boron, aluminum, oxygen, and carbon.
    Type: Application
    Filed: September 28, 2010
    Publication date: March 31, 2011
    Inventors: Hyun-Seok LIM, Shin-Jae Kang, Tai-Soo Lim, Jong-Cheol Lee, Jae-Hyoung Choi
  • Methods of forming a dielectric thin film of a semiconductor device and methods of manufacturing a capacitor having the same
    Publication number: 20110014770
    Abstract: A method of forming a dielectric thin film of a semiconductor device, the method including supplying a first nuclear atom precursor source and a second nuclear atom precursor source having different thermal decomposition temperatures to a substrate and forming a chemical adsorption layer including first nuclear atoms and second nuclear atoms on the substrate. A reactant including oxygen atoms may be supplied to the substrate on which the chemical adsorption layer is formed. An atomic layer including an oxide of the first nuclear atoms and the second nuclear atoms may be formed on the chemical adsorption layer.
    Type: Application
    Filed: November 30, 2009
    Publication date: January 20, 2011
    Inventors: Ki-yeon Park, Cha-young Yoo, Jong-cheol Lee, Jun-noh Lee
  • Power supply apparatus and method
    Patent number: 7869227
    Abstract: A method of supplying a power to elements in a power supply apparatus including a primary side and a second side. Particularly, a method of supplying a driving power to an element at the primary side of the power supply apparatus from a primary coil of a transformer. A power factor improvement section improves a power factor of a received alternating current (AC) power. A transformer then receives the AC power having the improved power factor from a primary coil and generates an induced power at a secondary coil. The transformer then provides the AC power to drive a predetermined element located at the primary side of the power supply apparatus from the primary coil.
    Type: Grant
    Filed: June 9, 2005
    Date of Patent: January 11, 2011
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Seung-eon Lee, Kyoung-geun Lee, Jong-cheol Lee
  • Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same
    Patent number: 7838438
    Abstract: A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.
    Type: Grant
    Filed: February 28, 2006
    Date of Patent: November 23, 2010
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Ki Vin Im, Jae Hyun Yeo, Kyoung Ryul Yoon, Jong Cheol Lee, Eun Ae Chung, Young Sun Kim
  • In-situ method of cleaning vaporizer during dielectric layer deposition process
    Patent number: 7824501
    Abstract: Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: November 2, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hoon-sang Choi, Jong-cheol Lee, Ki-vin Im, Eun-ae Chung, Sang-yeol Kang, Young-sun Kim, Kwang-hee Lee
  • SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD
    Publication number: 20100255651
    Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
    Type: Application
    Filed: December 10, 2009
    Publication date: October 7, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-yeol KANG, Jong-cheol LEE, Ki-vin LIM, Hoon-sang CHOI, Eun-ae CHUNG
  • Semiconductor devices having dielectric layers and methods of forming the same
    Patent number: 7791125
    Abstract: A method of forming a semiconductor device includes loading a semiconductor substrate into a reaction chamber, and providing metal organic precursors including hafnium and zirconium into the reaction chamber to form hafnium-zirconium oxide (HfxZr1-xO; 0<X<1) with a tetragonal crystalline structure on the semiconductor substrate. Related structures are also discussed.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: September 7, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hoon-Sang Choi, Jong-Cheol Lee, Ki-Vin Im, Jae-Hyun Yeo, Eun-Ae Chung, Sang-Yeol Kang
  • METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME
    Publication number: 20100190320
    Abstract: Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.
    Type: Application
    Filed: January 15, 2010
    Publication date: July 29, 2010
    Inventors: Ki-chul Kim, Youn-soo Kim, Ki-vin Im, Cha-young Yoo, Jong-cheol Lee, Ki-yeon Park, Hoon-sang Choi, Se-hoon Oh
  • Method manufacturing capacitor dielectric
    Patent number: 7759718
    Abstract: A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.
    Type: Grant
    Filed: October 2, 2007
    Date of Patent: July 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-yeol Kang, Jong-cheol Lee, Ki-vin Im, Jae-hyun Yeo, Hoon-sang Choi, Eun-ae Chung