Abstract: An optical path adjusting device includes a supporting plate having a hole through which light travels, a two-dimensional (2D) aperture disposed in the supporting plate so as to adjust an open area of the hole, and a three-dimensional (3D) aperture having a plurality of first blinds and a plurality of second blinds. The plurality of first blinds are disposed to correspond to a first area of the hole so as to move to open or close the first area, and the plurality of second blinds are disposed to correspond to a second area of the hole so as to move to open or close the second area.

Abstract: The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.

Abstract: A circuit connection structure is disclosed. A disclosed example circuit connection structure includes circuit board including a plurality of connection terminals; a housing for supporting the circuit board; and a circuit supporting unit including a plurality of circuit patterns on a surface thereof, formed of an electrical insulating material, and coupled to the housing so that the circuit patterns contact the connection terminals.

Abstract: An optical path adjusting device includes a supporting plate having a hole through which light travels, a two-dimensional (2D) aperture disposed in the supporting plate so as to adjust an open area of the hole, and a three-dimensional (3D) aperture having a plurality of first blinds and a plurality of second blinds. The plurality of first blinds are disposed to correspond to a first area of the hole so as to move to open or close the first area, and the plurality of second blinds are disposed to correspond to a second area of the hole so as to move to open or close the second area.

Abstract: A vibrating actuator assembly includes a diaphragm, at least one vibrator at the diaphragm and that vibrates when an electric signal is applied thereto, a vibration shaft having one end connected to the diaphragm, a rotor on an outer side of the vibration shaft to contact an outer surface of the vibration shaft and that moves by vibration of the vibration shaft, and an elastic presser at another end of the vibration shaft and that elastically presses the rotor toward the diaphragm.

Abstract: An apparatus for and a method of removing a moire pattern of a digital imaging device are provided. It is determined whether or not a moire pattern is created based on an image frequency of a preview image and a spatial frequency of an image sensor, and when it is determined that a moire pattern is generated, an optical path of light incident to an image sensor is slightly changed to remove the moire pattern. Accordingly, image quality deterioration can be improved, and a problem of unnecessary filtering that causes deterioration of resolution even when there is no moire pattern can be enhanced.

Abstract: A gas wiping apparatus for use in coating a molten metal onto a steel strip. In the apparatus, a chamber, to which a high pressure gas is supplied, defines a multistage uniform pressure space. A lip support unit is associated with a front of the chamber to allow the high pressure gas to flow therethrough, the lip support unit supporting the apparatus against load. Upper and lower lips are associated with a front of the lip support unit to cooperatively define an outlet. The upper lip adjusts a gap of a gas outlet cooperatively with the lower lip, and can be easily installed in a lip support unit while adjusting the gap of the gas outlet stably. Also, edge over coating (EOC) of the steel strip can be prevented without an additional auxiliary nozzle.

Abstract: A light path adjustment apparatus includes a support plate that has a first through hole through which light passes and optical units that move between an open location where the first through hole is opened by the optical units moving toward an outside of the first through hole and a closing location where the first through hole is divided into a plurality of regions by the plurality of optical units moving toward the first through hole. The optical units block at least a part of the light in the closing location.

Abstract: The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

Abstract: A pointing input device and method, a pointer control device and method, and an image pattern generation device and method which move a mouse pointer displayed in a display region according to the movement of a location pointed at by the pointing input device. The pointing input device includes an image reception unit capturing an image pattern, which is displayed in a display region of a perceived size and based on which the scope of the display region is sensed, and sensing the scope of the image pattern; a coordinate extraction unit extracting coordinates of a location pointed at in the display region based on a center of the sensed scope of the image pattern; and a transmission unit transmitting the extracted coordinates to a pointer control device which controls a mouse pointer displayed in the display region.

Abstract: A gas wiping apparatus for use in coating a molten metal onto a steel strip. In the apparatus, a chamber, to which a high pressure gas is supplied, defines a multistage uniform pressure space. A lip support unit is associated with a front of the chamber to allow the high pressure gas to flow therethrough, the lip support unit supporting the apparatus against load. Upper and lower lips are associated with a front of the lip support unit to cooperatively define an outlet. The upper lip adjusts a gap of a gas outlet cooperatively with the lower lip, and can be easily installed in a lip support unit while adjusting the gap of the gas outlet stably. Also, edge over coating (EOC) of the steel strip can be prevented without an additional auxiliary nozzle.

Abstract: An apparatus for processing an image, including: a body; a lens module disposed on the body; and a control ring disposed on the lens module, wherein the control ring is configured to change a setting value of a setting item.

Abstract: A piezoelectric motor including a base member; a stator disposed on the base member and comprising at least one piezoelectric element; a rotor configured to rotate by a wave motion of the stator, the wave motion being generated by the piezoelectric element; a cover member attached to the base member; a bearing arranged between the cover member and the rotor; and an elastic member configured to press the rotor toward the stator.

Abstract: A piezoelectric motor includes a piezoelectric element; a stator comprising a first surface and a second surface, wherein the piezoelectric element is disposed on the first surface and a plurality of projections are formed on the second surface; a rotor comprising an operating portion that contacts the plurality of projections and that rotates via waves of the stator generated by the piezoelectric element, wherein a part of each of the plurality of projections that contacts the operating portion comprises a curved contact portion.

Abstract: Provided are a single crystal cooler and a single crystal grower including the same. The single crystal cooler includes a cooling main body and a passage. The passage is formed on an inner wall and an outer wall of the cooling main body. The passage allows cooling materials to move therethrough. The single crystal cooler has a cylindrical shape. A first inner diameter R1 of the single crystal cooler is about 1.5 times or more greater than an inner diameter R2 of a single crystal grown by applying the single crystal cooler.

Abstract: A system and method of correcting a light pathway is provided. A system for correcting a light pathway, the system including: a light pathway change amount measurement unit to measure a light pathway change amount using a movement amount of an image when a light pathway of incident light is changed due to shaking of a camera; and a curved prism driving unit to drive a curved prism, composed of a refraction surface, based on a light pathway correction amount determined by the light pathway change amount.

Abstract: Provided is a piezoelectric motor including: a stator which includes first and second faces, wherein a plurality of piezoelectric elements are arranged on the first face, and a plurality of protrusions are formed on the second face; a rotor which is rotated by motions of waves of the stator generated by the piezoelectric elements; and a driver device which applies driving voltages to the piezoelectric elements, wherein polarization directions of the plurality of piezoelectric elements are vertical to a rotary face of the rotor.

Abstract: A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

Abstract: The present invention relates to a method for preparing high-purity alpha-lithium aluminate (?-LiAlO2). More specifically, the invention relates to a method for preparing alpha-lithium aluminate, which comprises mixing Al(OH)3 and Li2CO3 at a molar ratio of from 1:1 to 3:1 and heat-treating the mixture at a temperature of 500-800° C. and which can prepare high-purity alpha-lithium aluminate without needing to carry out a washing process.

Abstract: The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.