Abstract: A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

Abstract: The present invention relates to a method for preparing high-purity alpha-lithium aluminate (?-LiAlO2). More specifically, the invention relates to a method for preparing alpha-lithium aluminate, which comprises mixing Al(OH)3 and Li2CO3 at a molar ratio of from 1:1 to 3:1 and heat-treating the mixture at a temperature of 500-800° C. and which can prepare high-purity alpha-lithium aluminate without needing to carry out a washing process.

Abstract: The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.

Abstract: A mobile communication terminal device, capable of implementing large screen and displaying stereoscopic images, includes: a first case and a second case; a first and a second display part mounted on the first case and the second case, respectively; lens modules mounted in front of the first and second display parts for producing virtual images for images of the first and second display parts; and a rotation member for rotating the first case and the second case on the same rotation axis. The mobile communication terminal device further includes: a first case and a second case; a rotation member for rotating the first case and the second case on the same rotation axis; and a viewfinder unit mounted on one side of at least one of the first case and the second case.

Abstract: Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(?Tmax??Tmin)/?Tmin}×100?10, wherein ?Tmax is a maximum axial temperature gradient of the silicon melt and ?Tmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

Abstract: A mobile phone including a perfume spraying apparatus, the perfume spraying apparatus including a perfume storage unit capable of storing at least one perfume type and a perfume spraying unit, wherein the perfume spraying unit includes a perfume chamber coupled to the perfume storage unit by a perfume flow path, a pressure unit to pressurize the perfume chamber, and a nozzle to spray perfume outside the mobile phone. The mobile phone may include a control unit to instruct the perfume spraying apparatus to spray perfume when a button of the mobile phone is pushed and/or when the mobile phone is called and may change a type or amount of perfume sprayed according to an increase or decrease in a user's voice volume, according to a caller, according to a user customization and/or according to a noise change in a user's surroundings.

Abstract: Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.

Abstract: Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(?Tmax??Tmin)/?Tmin}×100?10, wherein ?Tmax is a maximum axial temperature gradient of the silicon melt and ?Tmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

Abstract: The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for forming a Maximum Gauss Plane (MGP) at a location of ML-1000 mm to ML-350 mm based on a Melt Level (ML) of the melt surface, and applying a strong magnetic field of 3000 to 5500 Gauss to an intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1500 to 3000 Gauss below a solid-liquid interface.

Abstract: An apparatus for and a method of removing a moire pattern of a digital imaging device are provided. It is determined whether or not a moire pattern is created based on an image frequency of a preview image and a spatial frequency of an image sensor, and when it is determined that a moire pattern is generated, an optical path of light incident to an image sensor is slightly changed to remove the moire pattern. Accordingly, image quality deterioration can be improved, and a problem of unnecessary filtering that causes deterioration of resolution even when there is no moire pattern can be enhanced.

Abstract: The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.

Abstract: A gas wiping apparatus for use in coating a molten metal onto a steel strip. In the apparatus, a chamber, to which a high pressure gas is supplied, defines a multistage uniform pressure space. A lip support unit is associated with a front of the chamber to allow the high pressure gas to flow therethrough, the lip support unit supporting the apparatus against load. Upper and lower lips are associated with a front of the lip support unit to cooperatively define an outlet. The upper lip adjusts a gap of a gas outlet cooperatively with the lower lip, and can be easily installed in a lip support unit while adjusting the gap of the gas outlet stably. Also, edge over coating (EOC) of the steel strip can be prevented without an additional auxiliary nozzle.

Abstract: The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

Abstract: The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.

Abstract: A system and method of correcting a light pathway is provided. A system for correcting a light pathway, the system including: a light pathway change amount measurement unit to measure a light pathway change amount using a movement amount of an image when a light pathway of incident light is changed due to shaking of a camera; and a curved prism driving unit to drive a curved prism, composed of a refraction surface, based on a light pathway correction amount determined by the light pathway change amount.

Abstract: A video pick device for displaying a menu in a fixed position regardless of its rotation state. The photographing device comprises a geomagnetic sensor for detecting a predetermined output value corresponding to a geomagnetism; a display unit for displaying a predetermined menu through a display panel; and a control unit for checking the output value detected by the geomagnetic sensor to determine a pickup position, and controlling the display unit to have a display state of the menu changed in response to the determined pickup position. Accordingly, the menu display state on the display panel is changed in response to respective pickup positions to be displayed with the same form in a fixed direction with respect to the surface of the earth.

Abstract: A photographing device supporting a panoramic imaging includes an image capture section for photographing a subject and outputting image data representing the subject, a sensor module for computing and outputting an azimuth of a photographing direction toward the subject, an image processor for creating a panoramic image by combining a plurality of image data captured at the image capture section, an output section for displaying a message using a display, and a controller for controlling the output section to set a target azimuth corresponding to an azimuth at an image capture and to adjust a photographing direction to the target azimuth when one of the plurality of the image data is captured. Thus, after photographing the subject in various angles while precisely controlling the photographing direction, the panoramic image can be created by combining the captured images.

Abstract: An obstacle detection apparatus and method which can detect the state of an obstacle according to a signal generated when the obstacle detection apparatus collides with the obstacle and a change in the posture of the obstacle detection apparatus caused due to the collision with the obstacle. The obstacle detection apparatus includes a main body which can be moved along the surface of the ground, a movement amount determination module which determines whether the amount of movement of the main body is outside a predefined threshold range, a posture determination module which determines the changed posture of the main body with respect to the surface of the ground according to the amount of movement of the main body, and a state determination module which determines the state of an obstacle based on the results of determination of the movement amount determination module or the posture determination module.

Abstract: An electrode wire with multi-coated layers for electrical discharge machining (EDM) is capable of fast and precisely machining a work piece for a desired shape without changing the electrode wire, and a method of manufacturing the electrode wire is obtained by performing the steps of manufacturing a core wire, coating the core wire with zinc, drying the coated core wire, diffusion-heat treating of the coated core wire, drawing a product from the coated core wire, and stabilization treating of the coated core wire in order.

Abstract: In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.