Patents by Inventor JONG GI KIM

JONG GI KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220226421
    Abstract: The present invention relates to a composition for prevention, improvement or treatment of metabolic syndrome comprising a complex of Indian gooseberry (amla) extract and barley sprout extract as an active ingredient. Specifically, the complex of Indian gooseberry extract and barley sprout extract reduces a body weight, blood sugar, insulin in blood and glycated hemoglobin in blood, and thereby it shows a synergistic effect in improvement of obesity or diabetes, and therefore it can be used as a pharmaceutical composition or health functional food for prevention or treatment of metabolic syndrome such as obesity and diabetes.
    Type: Application
    Filed: May 19, 2020
    Publication date: July 21, 2022
    Inventors: Hae-Yeon LEE, Jong-Lae KIM, Tae-Gi KIM, Mi-Ryeong PARK, Jong-Wook LEE, Jin-Seong YANG
  • Patent number: 11374581
    Abstract: A technology related to an electronic circuit, specifically, a phase locked loop or a frequency synthesizing apparatus, is disclosed. The frequency synthesizing apparatus includes an injection locked frequency divider and a replica frequency divider having the same circuit configuration as the injection locked frequency divider. A control value required for self-oscillating at a target frequency using the replica frequency divider is determined. When the injection locked frequency divider fails injection locking on a first attempt, the injection locking may be attempted using the determined control value. On the first attempt, the control value of the injection locked frequency divider may be determined and stored in advance according to a temperature and a supply voltage.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: June 28, 2022
    Assignees: SKAIChips Co., Ltd., Research & Business Foundation SUNGKYUNKWAN UNIVERSITY
    Inventors: Kang Yoon Lee, Jong Wan Jo, Young Gun Pu, Byeong Gi Jang, Joon Hong Park, Dong Soo Park, Jae Bin Kim, Yun Gwan Kim
  • Publication number: 20220123020
    Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.
    Type: Application
    Filed: January 3, 2022
    Publication date: April 21, 2022
    Applicant: SK hynix Inc.
    Inventors: In-Su PARK, Jong-Gi KIM, Hai-Won KIM, Hoe-Min JEONG
  • Publication number: 20220040549
    Abstract: A portable golf swing exerciser includes: a main body of a shaft shape; a head shaft including a head, and one or more connection shafts, of which one end is detachably coupled to the head, and the other end is detachably coupled to a front end of the main body; and an antenna stick guide extended from or retracted into a rear end of the main body in a form of an antenna having multiple sections.
    Type: Application
    Filed: November 17, 2020
    Publication date: February 10, 2022
    Inventor: Jong gi KIM
  • Patent number: 11244956
    Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: February 8, 2022
    Assignee: SK hynix Inc.
    Inventors: In-Su Park, Jong-Gi Kim, Hai-Won Kim, Hoe-Min Jeong
  • Patent number: 11179614
    Abstract: A putting training device includes a fixing hub including a shaft retainer combined with a putter shaft; a first rotary support and a second rotary support coupled to the block part at both sides of the putter shaft, respectively; a first support bar having an upper end supposed to be held in an underarm of a user and the other end rotatably coupled to the first rotary support; a second support bar having an upper end supposed to be held in the underarm of the user and the other end rotatably coupled to the second rotary support; and an angle adjuster coupled to the first support bar and the second support bar over the first rotary support and the second rotary support to be able to adjust an angle between the first support bar and the second support bar.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: November 23, 2021
    Inventor: Jong gi Kim
  • Publication number: 20210274761
    Abstract: Disclosed is a technology designed to prevent obstacles from getting caught in a fishing needle by covering the fishing needle using a weedless guard, and more particularly, to a weedless fishing needle including: needle covers in which wires formed of a plasticity material and having one fixed end are arranged to be expanded at a predetermined angle; and a fixture integrally formed with the fixed end of the needle covers and coupled to a fishing needle neck, wherein the fixture is coupled to the fishing needle neck of the fishing needle so as to be detachably inserted into the fishing needle neck, in which the fixture is formed of a flexible material and has a tubular or O-ring shape, and the needle cover includes needle covers arranged side by side, and is disposed to cover a periphery of a hook of the fishing needle.
    Type: Application
    Filed: December 11, 2020
    Publication date: September 9, 2021
    Inventor: JONG GI KIM
  • Publication number: 20210046371
    Abstract: A putting training device includes a fixing hub including a shaft retainer combined with a putter shaft; a first rotary support and a second rotary support coupled to the block part at both sides of the putter shaft, respectively; a first support bar having an upper end supposed to be held in an underarm of a user and the other end rotatably coupled to the first rotary support; a second support bar having an upper end supposed to be held in the underarm of the user and the other end rotatably coupled to the second rotary support; and an angle adjuster coupled to the first support bar and the second support bar over the first rotary support and the second rotary support to be able to adjust an angle between the first support bar and the second support bar.
    Type: Application
    Filed: December 10, 2019
    Publication date: February 18, 2021
    Inventor: Jong gi KIM
  • Publication number: 20200328226
    Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.
    Type: Application
    Filed: November 11, 2019
    Publication date: October 15, 2020
    Applicant: SK hynix Inc.
    Inventors: In-Su PARK, Jong-Gi KIM, Hai-Won KIM, Hoe-Min JEONG
  • Patent number: 10714499
    Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: July 14, 2020
    Assignee: SK hynix Inc.
    Inventors: Won Joon Choi, Min Sung Ko, Kyeong Bae Kim, Jong Gi Kim, Dong Sun Sheen, Jung Myoung Shim, Young Ho Yang, Hyeng Woo Eom, Kwang Wook Lee, Woo Jae Chung
  • Publication number: 20190319045
    Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
    Type: Application
    Filed: June 25, 2019
    Publication date: October 17, 2019
    Inventors: Won Joon CHOI, Min Sung KO, Kyeong Bae KIM, Jong Gi KIM, Dong Sun SHEEN, Jung Myoung SHIM, Young Ho YANG, Hyeng Woo EOM, Kwang Wook LEE, Woo Jae CHUNG
  • Patent number: 10373973
    Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: August 6, 2019
    Assignee: SK hynix Inc.
    Inventors: Won Joon Choi, Min Sung Ko, Kyeong Bae Kim, Jong Gi Kim, Dong Sun Sheen, Jung Myoung Shim, Young Ho Yang, Hyeng Woo Eom, Kwang Wook Lee, Woo Jae Chung
  • Publication number: 20190081066
    Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
    Type: Application
    Filed: April 24, 2018
    Publication date: March 14, 2019
    Inventors: Won Joon CHOI, Min Sung KO, Kyeong Bae KIM, Jong Gi KIM, Dong Sun SHEEN, Jung Myoung SHIM, Young Ho YANG, Hyeng Woo EOM, Kwang Wook LEE, Woo Jae CHUNG
  • Patent number: 9865652
    Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: January 9, 2018
    Assignee: SK HYNIX INC.
    Inventors: Kyung-Wan Kim, Jong-Chul Lee, Jong-Gi Kim
  • Patent number: 9704921
    Abstract: Provided is an electronic device including a switching element, wherein the switching element may include a first electrode, a second electrode, a switching layer interposed between the first and second electrodes, and a first amorphous semiconductor layer interposed between the first electrode and the switching layer.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: July 11, 2017
    Assignee: SK HYNIX INC.
    Inventors: Jong-Gi Kim, Ki-Jeung Lee, Beom-Yong Kim
  • Publication number: 20170186813
    Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.
    Type: Application
    Filed: June 14, 2016
    Publication date: June 29, 2017
    Inventors: Kyung-Wan KIM, Jong-Chul LEE, Jong-Gi KIM
  • Publication number: 20170117325
    Abstract: An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: interlayer insulating layers and conductive first base layer patterns that are alternatively stacked over a substrate; a dielectric second base layer pattern that is in contact with sidewalls of the interlayer insulating layers; first electrodes that are in contact with sidewalls of the first base layer patterns; a second electrode disposed over outer sidewalls of the first electrodes; and a variable resistance layer pattern interposed between the first electrodes and the second electrode. Each of the first electrodes comprises an alloy that includes first and second elements. The first element is included in the first base layer patterns and the second element is included in the second base layer pattern.
    Type: Application
    Filed: April 28, 2016
    Publication date: April 27, 2017
    Inventors: Jong-Gi KIM, Beom-Yong KIM, Kee-Jeung LEE
  • Publication number: 20160118442
    Abstract: Provided is an electronic device including a switching element, wherein the switching element may include a first electrode, a second electrode, a switching layer interposed between the first and second electrodes, and a first amorphous semiconductor layer interposed between the first electrode and the switching layer.
    Type: Application
    Filed: March 18, 2015
    Publication date: April 28, 2016
    Inventors: Jong-Gi KIM, Ki-Jeung LEE, Beom-Yong KIM
  • Patent number: 9146446
    Abstract: The present invention relates to an auto focus control apparatus and a continuous auto focus control method. In accordance with an embodiment of the present invention, an auto focus control apparatus including: a focal value calculation unit for calculating a focal value from a signal of an image frame; a focus lens driving unit for moving a focus lens to a desired position; and a control unit for determining position movement of a subject based on the focal value calculated by the focal value calculation unit, executing pre-scan according to the movement of the focus lens by controlling the focus lens driving unit to move the focus lens at set frame intervals when the position of the subject is moved, and skipping a lens moving frame corresponding to the time when the focus lens moves during the pre-scan is provided.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: September 29, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Gi Kim, Young Jin Kim
  • Publication number: 20140339490
    Abstract: A nonvolatile resistive switching memory (ReRAM) device having no selection device is provided. The ReRAM device includes a lower electrode that is formed on on a substrate; a metal oxide layer that is formed on the lower electrode, the metal oxide layer having a resistive switching characteristic; an upper electrode that is formed on the metal oxide layer; and a tunnel barrier oxide film that is formed between the lower electrode and the metal oxide layer, thereby forming a double oxide film structure, the tunnel barrier oxide film being made of a material, a band energy gap and a conduction band offset of which are lower than those of the metal oxide layer, and which does not cause interface switching.
    Type: Application
    Filed: May 13, 2014
    Publication date: November 20, 2014
    Applicant: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Hyun Chul SOHN, Dae Hong Ko, Jong Gi Kim, Jin Ho Oh, Young Jae Kim