Abstract: Disclosed is a tubeless tire having a reinforced bead portion capable of reducing the stress applied to a portion contacting a rim flange and to an edge of a carcass. The tubeless tire includes a carcass turned up around a bead core, a bead filler filled in a space above the bead core surrounded by the carcass, a steel chafer disposed to contact an outer surface of the carcass, and a first reinforcing rubber layer provided between the bead core and the carcass in order to prevent a turnup portion of the carcass from being pulled downwards, the first reinforcing rubber layer being located around a portion of the bead core that is oriented toward a rim flange. The bead portion is improved in durability under a high- pneumatic-pressure condition by reducing the stress applied to interfaces of the edge of the carcass, the steel chafer and the nylon chafer.

Abstract: The resent invention relates to an antenna device of a radar system, comprising: a substrate; multiple radiators arranged on the upper surface of the substrate; and multiple resonators arranged on the lower surface of the substrate and placed beneath the radiator, the resonators having the shape of rings having at least one slit formed thereon. According to the present invention, the radiators and the resonators operate together, thereby improving the performance of the antenna device.

Abstract: The present invention relates to an antenna device for a radar system, comprising: a power supply unit; and a plurality of radiators disposed to be spaced from the power supply unit, wherein each radiator is formed according to a variable determined by a weight predetermined for each radiator. According to the present invention, the performance of the radar system can be improved by obtaining uniform performance of each radiator by forming each radiator according to the weight for each radiator.

Abstract: Provided is a polyhedral-shaped radiation counter which measures a radiation level of a radioactive material, in which sensor modules configured to measure the radiation level are disposed at vertexes of a polyhedral shape, respectively, and the sensor modules are connected to each other by rod-shaped frame members disposed in edge positions of the polyhedral shape and face parts of the polyhedral shape form an open space.

Abstract: A thin-layer chromatography type radiation detector includes a plurality of light-emitting members configured to generate visible light due to radiation, each of the light-emitting members including a scintillator having a surface filled with a reflector for reflecting the visible light, and are arranged in parallel to one another in a width direction, light sensors respectively coupled to one end portions of the plurality of light-emitting members and configured to measure a current generated due to the visible light generated by the plurality of light-emitting members, and an output port configured to sequentially output values of the current measured by the light sensors as digital signals.

Abstract: Provided is a polyhedral-shaped radiation counter which measures a radiation level of a radioactive material, in which sensor modules configured to measure the radiation level are disposed at vertexes of a polyhedral shape, respectively, and the sensor modules are connected to each other by rod-shaped frame members disposed in edge positions of the polyhedral shape and face parts of the polyhedral shape form an open space.

Abstract: Disclosed is an antenna apparatus. The antenna apparatus includes a lower antenna element; an upper antenna element on the lower antenna element; and an intermediate ground element interposed between the lower antenna element and the upper antenna element and overlapping with the lower antenna element and the upper antenna element. The antenna apparatus may have an expanded resonance frequency band.

Abstract: A wireless communication terminal according to the embodiment includes a communication module including a circuit board having a plurality of pins; a shield case antenna overlapping with one side of the circuit board, electrically connected to a part of the pins and including a signal receiving unit; and a signal processing unit for processing the received signals. An antenna matching unit for matching impedance between the signal processing unit and an antenna unit, a phase shifter for controlling a phase of the received signal and an amplitude regulator for adjusting amplitude of the received signal are provided between the signal processing unit and the antenna unit.

Abstract: The present invention relates to a negative electrode material for a secondary battery and to a method for manufacturing same. The negative electrode material includes a graphite matrix and a plurality of tin-oxide nanorods disposed on the graphite matrix. Thus, when the negative electrode material is used as the negative electrode for a secondary battery, the negative electrode material may provide high initial capacity (1010 mAhg?1) and coulombic efficiency, superior rate capability, and improved electrochemical properties. Further, the method for manufacturing the negative electrode material for a secondary battery includes: a step of activating a surface of graphite; coating tin-oxide nanoparticles onto the activated surface of the graphite so as to form tin-oxide seed-type graphite; and heating the tin-oxide seed-type graphite using heated water in order to grow a plurality of tin-oxide nanorods.

Abstract: A printed circuit board and manufacturing method thereof. A printed circuit board has an insulation substrate, which includes an insulation layer, a circuit pattern formed on one side of the insulation layer, and an interlayer passage joined to the insulation layer and configured to electrically connect with the circuit pattern, and a heat-release layer, which is stacked on the other side of the insulation layer to be stacked on the insulation substrate, can provide a high heat-releasing effect and high bending strength, by means of inner layers or ground layers formed by the heat-release layers.

Abstract: Embodiments relate to a method of manufacturing a semiconductor device, wherein voids on a copper seed layer may be removed. According to embodiments, a method of manufacturing a semiconductor device may include forming at least one type of an insulating layer on the entire surface of a semiconductor substrate, forming a contact hole and a trench, through which a portion of the semiconductor substrate is exposed, forming an anti-diffusion layer on inner walls of the contact hole and the trench, forming a copper seed layer on the anti-diffusion layer, removing a copper oxide layer exposed on a surface of the copper seed layer through a wet etching process, and forming a copper metal layer in the contact hole and the trench.

Abstract: A printed circuit board and manufacturing method thereof are disclosed. A printed circuit board composed of an insulation substrate, which includes an insulation layer, a circuit pattern formed on one side of the insulation layer, and an interlayer passage joined to the insulation layer and configured to electrically connect with the circuit pattern, and a heat-release layer, which is stacked on the other side of the insulation layer to be stacked on the insulation substrate, can provide a high heat-releasing effect and high bending strength, by means of inner layers or ground layers formed by the heat-release layers.

Abstract: A printed circuit board and manufacturing method thereof. A printed circuit board has an insulation substrate, which includes an insulation layer, a circuit pattern formed on one side of the insulation layer, and an interlayer passage joined to the insulation layer and configured to electrically connect with the circuit pattern, and a heat-release layer, which is stacked on the other side of the insulation layer to be stacked on the insulation substrate, can provide a high heat-releasing effect and high bending strength, by means of inner layers or ground layers formed by the heat-release layers.

Abstract: A degas apparatus for fabricating a semiconductor device is provided. The degas apparatus includes a chamber into which a wafer is loaded, a heating unit, disposed within the chamber, for heating the wafer to activate impurities remaining on the wafer, and a vacuum suction unit for sucking gases within the chamber by means of vacuum suction to discharge the activated impurities on the wafer to the outside. The degas apparatus also includes a hydrogen supply unit for supplying a hydrogen (H2) gas to the chamber, which is heated by the heating unit, to remove and/or prevent formation of a metal oxide layer on the wafer.

Abstract: A printed circuit board and manufacturing method thereof are disclosed. A printed circuit board composed of an insulation substrate, which includes an insulation layer, a circuit pattern formed on one side of the insulation layer, and an interlayer passage joined to the insulation layer and configured to electrically connect with the circuit pattern, and a heat-release layer, which is stacked on the other side of the insulation layer to be stacked on the insulation substrate, can provide a high heat-releasing effect and high bending strength, by means of inner layers or ground layers formed by the heat-release layers.

Abstract: Embodiments relate to a method of manufacturing a semiconductor device, wherein voids on a copper seed layer may be removed. According to embodiments, a method of manufacturing a semiconductor device may include forming at least one type of an insulating layer on the entire surface of a semiconductor substrate, forming a contact hole and a trench, through which a portion of the semiconductor substrate is exposed, forming an anti-diffusion layer on inner walls of the contact hole and the trench, forming a copper seed layer on the anti-diffusion layer, removing a copper oxide layer exposed on a surface of the copper seed layer through a wet etching process, and forming a copper metal layer in the contact hole and the trench.

Abstract: A method of depositing copper wiring that includes at least one of the following. Transporting a semiconductor substrate with a damascene pattern into a first chamber. Substantially concurrently performing a degassing process and a process of removing a Copper Oxide film on a semiconductor substrate located in a first chamber.