Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. The active layer includes (T+1) barrier layers, T well layers between the (T+1) barrier layers, and a first dummy layer between N well layers adjacent to the second conductive semiconductor layer and N barrier layers adjacent to the N well layers, in which T>N?1.

Abstract: Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer.

Abstract: Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandgaps and have different thicknesses.

Abstract: Disclosed is a light emitting device including a substrate, a buffer layer on the substrate, and a light-emitting structure on the buffer layer. The buffer layer has a refractive index decreased toward the substrate from the light-emitting structure.

Abstract: A method for forming a unit layout pattern includes: forming first through third active regions in the unit layout pattern, each of the first through third active regions aligning and extending along a length in a first direction and having a width in a second direction perpendicular to the first direction; forming first and second gate regions on the first and second active regions, the first and second gate regions electrically connected to each other; forming the first active region of a first conductive type within a second conductive type well region; forming the second active region of a second conductive type; and forming the third active region connected with the first and second gate regions to form a junction diode, the third active region being located between the first or the second active region and an end of the length in the first direction of the unit pattern.

Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

Abstract: Disclosed is a light emitting device including a light emitting structure including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, an electrode layer on the light emitting structure, and a contact layer between the light emitting structure and the electrode layer and including a nitride semiconductor layer.

Abstract: Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandpgaps and have different thicknesses.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. The active layer includes (T+1) barrier layers, T well layers between the (T+1) barrier layers, and a first dummy layer between N well layers adjacent to the second conductive semiconductor layer and N barrier layers adjacent to the N well layers, in which T>N?1.

Abstract: A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The bather layers comprise a first barrier layer having a first band gap which is the nearest to the second conductive type semiconductor layer, a second barrier layer adjacent to the first barrier, and a third barrier layer between the second bather layer and the first conductive type semiconductor layer. The well layers comprise a first well layer having a third band gap different from the first band gap between the first and second bather layers, and a second well layer between the second barrier layer and the third barrier layer, the second well layer having a second band gap. The first well layer has a thickness thinner than that of the second well layer.

Abstract: A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap.

Abstract: Disclosed is a light emitting device including a substrate, a buffer layer on the substrate, and a light-emitting structure on the buffer layer. The buffer layer has a refractive index decreased toward the substrate from the light-emitting structure.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.

Abstract: A data line layout includes column selection lines arranged in a first direction at a layer on a memory cell array region, and data lines arranged in the first direction at the layer, the data lines being connected between I/O sense amplifiers and I/O pads.

Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.

Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

Abstract: A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

Abstract: Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer.

Abstract: A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

Abstract: A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap.