Abstract: Methods of forming a single crystal semiconductor thin film on an insulator and semiconductor devices fabricated thereby are provided. The methods include forming an interlayer insulating layer on a single crystal semiconductor layer. A single crystal semiconductor plug is formed to penetrate the interlayer insulating layer. A semiconductor oxide layer is formed within the single crystal semiconductor plug using an ion implantation technique and an annealing technique. As a result, the single crystal semiconductor plug is divided into a lower plug and an upper single crystal semiconductor plug with the semiconductor oxide layer being interposed therebetween. That is, the upper single crystal semiconductor plug is electrically insulated from the lower plug by the semiconductor oxide layer. A single crystal semiconductor pattern is formed to be in contact with the upper single crystal semiconductor plug and cover the interlayer insulating layer.

Abstract: Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconductor plug extends through the inter-layer insulating layer, and a single-crystalline epitaxial semiconductor pattern is in contact with the single-crystalline semiconductor plug on the inter-layer insulating layer. The single-crystalline epitaxial semiconductor pattern is at least partially planarized to form a semiconductor body layer on the inter-layer insulating layer, and the semiconductor body layer is patterned to form a semiconductor body. As a result, the semiconductor body includes at least a portion of the single-crystalline epitaxial semiconductor pattern. Thus, the semiconductor body has an excellent single-crystalline structure. Semiconductor integrated circuits fabricated using the methods are also provided.

Abstract: A non-volatile memory device includes a semiconductor substrate including a cell array region and a peripheral circuit region. A first cell unit is on the semiconductor substrate in the cell array region, and a cell insulating layer is on the first cell unit. A first active body layer is in the cell insulating layer and over the first cell unit, and a second cell unit is on the first active body layer. The device further includes a peripheral transistor on the semiconductor substrate in the peripheral circuit region. The peripheral transistor has a gate pattern and source/drain regions, and a metal silicide layer is on the gate pattern and/or on the source/drain regions of the peripheral transistor. A peripheral insulating layer is on the metal silicide layer and the peripheral transistor, and an etching protection layer is between the cell insulating layer and the peripheral insulating layer and between the metal silicide layer and the peripheral insulating layer.

Abstract: SRAM cells having landing pads in contact with upper and lower cell gate patterns, and methods of forming the same are provided. The SRAM cells and the methods remove the influence resulting from structural characteristics of the SRAM cells having vertically stacked upper and lower gate patterns, for stably connecting the patterns on the overall surface of the semiconductor substrate. An isolation layer isolating at least one lower active region is formed in a semiconductor substrate of the cell array region. The lower active region has two lower cell gate patterns. A body pattern is disposed in parallel with the semiconductor substrate. The body pattern is formed to confine an upper active region, which has upper cell gate patterns on the lower cell gate patterns. A landing pad is disposed between the lower cell gate patterns. A node pattern is formed to simultaneously contact the upper cell gate pattern and the lower cell gate pattern.

Abstract: SRAM cells having landing pads in contact with upper and lower cell gate patterns, and methods of forming the same are provided. The SRAM cells and the methods remove the influence resulting from structural characteristics of the SRAM cells having vertically stacked upper and lower gate patterns, for stably connecting the patterns on the overall surface of the semiconductor substrate. An isolation layer isolating at least one lower active region is formed in a semiconductor substrate of the cell array region. The lower active region has two lower cell gate patterns. A body pattern is disposed in parallel with the semiconductor substrate. The body pattern is formed to confine an upper active region, which has upper cell gate patterns on the lower cell gate patterns. A landing pad is disposed between the lower cell gate patterns. A node pattern is formed to simultaneously contact the upper cell gate pattern and the lower cell gate pattern.

Abstract: Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.

Abstract: A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

Abstract: In one embodiment, an intrinsic single crystalline semiconductor plug is formed to pass through a lower insulating layer using a selective epitaxial growth process employing a node impurity region as a seed layer, and a single crystalline semiconductor body pattern is formed on the lower insulating layer using the intrinsic single crystalline semiconductor plug as a seed layer. When the recessed single crystalline semiconductor plug is doped with impurities having the same conductivity type as the node impurity region, a peripheral impurity region is prevented from being counter-doped. As a result, it is possible to implement a high performance semiconductor device that requires a single crystalline thin film transistor as well as a node contact structure with ohmic contact.

Abstract: Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same are provided. The semiconductor integrated circuit devices include an interlayer insulating layer formed on a semiconductor substrate and a single crystalline semiconductor plug penetrating the interlayer insulating layer. A single crystalline semiconductor body pattern is provided on the interlayer insulating layer. The single crystalline semiconductor body pattern has an elevated region and contacts the single crystalline semiconductor plug. The method of forming the single crystalline semiconductor body pattern having the elevated region includes forming a sacrificial layer pattern covering the single crystalline semiconductor plug on the interlayer insulating layer. A capping layer is formed to cover the sacrificial layer pattern and the interlayer insulating layer, and the capping layer is patterned to form an opening which exposes a portion of the sacrificial layer pattern.

Abstract: Methods of forming a single crystal semiconductor thin film on an insulator and semiconductor devices fabricated thereby are provided. The methods include forming an interlayer insulating layer on a single crystal semiconductor layer. A single crystal semiconductor plug is formed to penetrate the interlayer insulating layer. A semiconductor oxide layer is formed within the single crystal semiconductor plug using an ion implantation technique and an annealing technique. As a result, the single crystal semiconductor plug is divided into a lower plug and an upper single crystal semiconductor plug with the semiconductor oxide layer being interposed therebetween. That is, the upper single crystal semiconductor plug is electrically insulated from the lower plug by the semiconductor oxide layer. A single crystal semiconductor pattern is formed to be in contact with the upper single crystal semiconductor plug and cover the interlayer insulating layer.

Abstract: SRAM cells having landing pads in contact with upper and lower cell gate patterns, and methods of forming the same are provided. The SRAM cells and the methods remove the influence resulting from structural characteristics of the SRAM cells having vertically stacked upper and lower gate patterns, for stably connecting the patterns on the overall surface of the semiconductor substrate. An isolation layer isolating at least one lower active region is formed in a semiconductor substrate of the cell array region. The lower active region has two lower cell gate patterns. A body pattern is disposed in parallel with the semiconductor substrate. The body pattern is formed to confine an upper active region, which has upper cell gate patterns on the lower cell gate patterns. A landing pad is disposed between the lower cell gate patterns. A node pattern is formed to simultaneously contact the upper cell gate pattern and the lower cell gate pattern.

Abstract: Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is provided that extends through the interlayer insulating layer and a molding layer pattern is provided on the semiconductor substrate and the single crystalline semiconductor plug. The molding layer pattern defines an opening therein that at least partially exposes a portion of the single crystalline semiconductor plug. A single crystalline semiconductor epitaxial pattern is provided on the exposed portion of single crystalline semiconductor plug using a selective epitaxial growth technique that uses the exposed portion of the single crystalline semiconductor plug as a seed layer. A single crystalline semiconductor region is provided in the opening. The single crystalline semiconductor region includes at least a portion of the single crystalline semiconductor epitaxial pattern.

Abstract: Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconductor plug extends through the inter-layer insulating layer, and a single-crystalline epitaxial semiconductor pattern is in contact with the single-crystalline semiconductor plug on the inter-layer insulating layer. The single-crystalline epitaxial semiconductor pattern is at least partially planarized to form a semiconductor body layer on the inter-layer insulating layer, and the semiconductor body layer is patterned to form a semiconductor body. As a result, the semiconductor body includes at least a portion of the single-crystalline epitaxial semiconductor pattern. Thus, the semiconductor body has an excellent single-crystalline structure. Semiconductor integrated circuits fabricated using the methods are also provided.

Abstract: An oil supply apparatus for a hermetic compressor includes: a crankshaft coupled with a motor so as to revolve together and having an oil flow path inside, a sleeve connected to a lower part of the crankshaft so as to revolve together with the crankshaft in one body, a sucking member arranged to maintain a uniform interval with an inner circumference face of the sleeve so as to carry out a suction of an oil, and a support means for supporting the sucking member to slide, the support means connected between the sleeve and sucking member so as to maintain a stationary state. The sucking member is supported so as not to revolve at the revolving center of the sleeve, thereby maintaining a uniform gap between the inner circumference face of the sleeve and the sucking member regardless of the vibration from the actuating compressor so as to improve oil supply reliance.

Abstract: An oil supply apparatus for a hermetic compressor includes: a crankshaft coupled with a rotor of a motor so as to revolve together and having an oil flow path inside, a sleeve connected to a lower part of the crankshaft so as to revolve together with the crankshaft 107 in one body, a sucking member arranged to maintain a uniform interval with an inner circumference face of the sleeve so as to revolve in a direction opposite to that of the sleeve to carry out a suction of an oil, and a rotating force transferring means for supporting the sucking member so that the sucking member revolves together with the sleeve and receiving a rotating force of the sleeve so as to revolve the sucking member in a direction opposite to a revolving direction of the sleeve. The relative revolution speed between the sleeve and sucking member increases so as to increase the oil supply to the sliding and frictional parts, thereby enabling to improve a lubrication performance of the compressor.

Abstract: A method for manufacturing a sliding part for a hermetic compressor is disclosed. Since the abrasion resistance and corrosion resistance of the sliding part is increased, the energy consumption efficiency is improved and the performance of the compressor can be enhanced. In addition, since the manufacturing process is shortened, the production cost can be reduced and the manufacturing time can be reduced. Moreover, since the thickness change of the sliding part is minimized, the defective rate of the part size can be reduced and its quality can be improved.

Abstract: In a head cover structure of a hermetic motor-driving type compressor, by comprising a front head cover having a space divided into a low-pressure side sucking a refrigerant by being installed a suction muffler and a high-pressure side discharging the refrigerant by an enclosure wall and a rear head cover combined to the rear surface of the front head cover and having a space divided into a low-pressure side and a high-pressure side by an enclosure wall, a flatness of the front head cover can be improved, leakage of a refrigerant gas from the high-pressure side can be prevented, and the cost of materials can be reduced by using an inexpensive steel material.

Abstract: An oil supply apparatus for a hermetic compressor includes: a crankshaft coupled with a motor so as to revolve together and having an oil flow path inside, a sleeve connected to a lower part of the crankshaft so as to revolve together with the crankshaft in one body, a sucking member arranged to maintain a uniform interval with an inner circumference face of the sleeve so as to carry out a suction of an oil, and a support means for supporting the sucking member to slide, the support means connected between the sleeve and sucking member so as to maintain a stationary state. The sucking member is supported so as not to revolve at the revolving center of the sleeve, thereby maintaining a uniform gap between the inner circumference face of the sleeve and the sucking member regardless of the vibration from the actuating compressor so as to improve oil supply reliance.

Abstract: An oil supply apparatus for a hermetic compressor includes: a crankshaft coupled with a rotor of a motor so as to revolve together and having an oil flow path inside, a sleeve connected to a lower part of the crankshaft so as to revolve together with the crankshaft 107 in one body, a sucking member arranged to maintain a uniform interval with an inner circumference face of the sleeve so as to revolve in a direction opposite to that of the sleeve to carry out a suction of an oil, and a rotating force transferring means for supporting the sucking member so that the sucking member revolves together with the sleeve and receiving a rotating force of the sleeve so as to revolve the sucking member in a direction opposite to a revolving direction of the sleeve. The relative revolution speed between the sleeve and sucking member increases so as to increase the oil supply to the sliding and frictional parts, thereby enabling to improve a lubrication performance of the compressor.

Abstract: In a head cover structure of a hermetic motor-driving type compressor, by comprising a front head cover having a space divided into a low-pressure side sucking a refrigerant by being installed a suction muffler and a high-pressure side discharging the refrigerant by an enclosure wall and a rear head cover combined to the rear surface of the front head cover and having a space divided into a low-pressure side and a high-pressure side by an enclosure wall, a flatness of the front head cover can be improved, leakage of a refrigerant gas from the high-pressure side can be prevented, and the cost of materials can be reduced by using an inexpensive steel material.