Abstract: A display device capable of reducing a non-display area includes a substrate including at least one hole area disposed within an emission area, and at least one blocking hole passing through inorganic insulating films disposed beneath a light emitting element while including upper and lower insulating films made of different materials. Side surfaces of the upper inorganic insulating film exposed through the blocking hole protrude beyond side surfaces of the lower inorganic insulating film exposed through the blocking hole, respectively. Accordingly, it is possible to minimize a bezel area, which is a non-display area, and to disconnect a light emitting stack by the blocking hole.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A display driving device including: a gate driver configured to provide a first gate selection signal to a first gate line of a display panel to select the first gate line; a source driver configured to provide an image signal corresponding to the first gate line to a source line; an Electrostatic Discharge (ESD) detection circuit configured to receive a power supply voltage, determine whether there is an ESD in the power supply voltage and, when the ESD is detected, generate a first detection signal; and a controller configured to receive the first detection signal to generate a masking signal, wherein the gate driver is configured to receive the masking signal and not provide a second gate selection signal to select a second gate line.

Abstract: A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the

Abstract: A display device capable of reducing a non-display area is disclosed. The disclosed display device includes a first through hole not overlapping with an organic cover layer surrounding at least one hole area disposed within an active area, and a second through hole passing through a substrate. Accordingly, it is possible to minimize a bezel area, which is a non-display area, and to prevent damage to a light emitting stack caused by a stripping process.

Abstract: A wireless communication with modulation and demodulation set based on channel information is disclosed. An operating method of a first wireless communication device includes: transmitting a pilot signal via a wireless channel to a second wireless communication device; receiving channel state information, estimated by and transmitted from the second wireless communication device in response to the pilot signal, the channel state information including amplitude information and phase information of a wireless channel; setting a modulation method for data transmission based on the amplitude information and the phase information of the wireless channel; generating modulated data based on the modulation method; and transmitting the modulated data via the wireless channel.

Abstract: The present invention relates to a photosensitive resin composition that is excellent in adhesiveness and sensitivity. Specifically, the photosensitive resin composition is capable of providing a cured film that is excellent in transparency, sensitivity, chemical resistance, and adhesiveness upon immersion in a stripper. Thus, the cured film can be effectively used in a liquid crystal display, an organic EL display, and the like.

Abstract: A multilayer ceramic electronic component includes a ceramic body in which dielectric layers and internal electrodes are alternately stacked. The dielectric layers contain at least one dielectric grain having a ratio of a long axis to a short axis that is 3.5 or more. The internal electrodes contain a ceramic component containing a grain growth adjusting ingredient for dielectric grains. Each dielectric layer includes interfacial portions adjacent to the internal electrodes and a central portion disposed between the interfacial portions, and concentrations of the grain growth adjusting ingredient in the interfacial portions and the central portion are different from each other.

Abstract: A substitution gold plating solution for performing uniform gold plating directly on copper wiring of a printed circuit board is provided and a gold plating method using the same is provided, the solution comprising a purine-based compound or a pyrimidine-based compound having a carbonyl oxygen used as a localized corrosion inhibitor, a water-soluble gold compound, an aminocarboxylic acid as a complexing agent, a dicarboxylic acid as a conductivity improving agent, an ?-hydroxycarboxylic acid and heteroaryl carboxylic acid as a base metal elution and re-precipitation preventing agent, a sulfite compound as a gold ion stabilizer, an axole compound as a surface corrosion inhibitor, other surfactants, crystal regulators, pH adjuster, and buffers. The substitution-type electroless gold plating solution according to the present invention prevents the localized corrosion of the copper surface, which is the base metal, and thus the gold plating film produced is excellent in solder mounting reliability.

Abstract: A vehicle steering apparatus. The durability of a sensor rotor to heat and abrasion is improved. The flatness of the sensor rotor is prevented from being lowered during calking for coupling of the sensor rotor to a steering shaft so that steering torque of a driver can be more accurately detected. A fabrication process is simplified, and fabrication costs are reduced.

Abstract: Disclosed is a method for increasing location estimation accuracy of a communication device, including identifying a set including at least one sample among a plurality of samples of a probability distribution for estimated locations of the communication device, and determining a location of the communication device among the at least one sample based on a reliability of each of the at least one sample, by determining the reliability of each of the at least one sample in the set, when a difference between a first location of the communication device which is estimated based on a first scheme and a second location of the communication device which is estimated based on a second scheme is greater than or equal to a preset threshold value, and determining a sample of which a reliability is greatest among the at least one sample as the location of the communication device.

Abstract: A capacitor component includes a body in which a dielectric layer and an internal electrode are alternately stacked, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a composite layer including a dielectric material powder and a metallic particle and first and second protective layers including a dielectric material powder and spaced apart by the composite layer. A thickness of each of the first and second protective layers is equal to or greater than ? of a thickness of the dielectric layer.

Abstract: A power transmission device of a steering system. A first connector includes a first coupling portion coupled to a first shaft and first supporting portions protruding axially from the first coupling portion. A second connector includes a second coupling portion coupled to a second shaft disposed coaxially with the first shaft and second supporting portions protruding axially from the second coupling portion to be circumferentially spaced apart from the first supporting portions. A damper is coupled axially between the first connector and the second connector, and includes blades supported circumferentially between the first supporting portions and the second supporting portions.

Abstract: A power transmission device of a steering system. A first connector includes a cylindrical first support coupled to one of coaxial first and second shafts and first coupling portions extending axially from inner circumferential portions of the first support. A second connector includes a second support coupled to the other of the first and second shafts and fitted into the first support and second coupling portions extending axially from outer circumferential portions of the second support. A damper includes outer support recesses provided in outer circumferential portions thereof, with the first coupling portions being fitted into the outer support recesses, and inner support recesses provided in inner circumferential portions thereof, with the second coupling portions being fitted into the inner support recesses, wherein the damper is coupled between the first connector and the second connector.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor formed in the first region and formed by a first gate line including a first lower metal-containing layer and a first upper metal-containing layer, and a second transistor formed in the second region and formed by a second gate line having an equal width to that of the first gate line and including a second lower metal-containing layer and a second upper metal-containing layer on the second upper metal-containing layer, wherein each of an uppermost end of the first upper metal-containing layer and an uppermost end of the second lower metal-containing layer has a higher level than an uppermost end of the first lower metal-containing layer.

Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first internal electrodes and second internal electrodes disposed to face each other with one of the dielectric layers interposed therebetween; and first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively. The dielectric layer includes dielectric grains, a grain boundary is present between at least two dielectric grains of the dielectric grains, and a Si/Ti mole ratio in the grain boundary satisfies 15% to 40%.

Abstract: Disclosed are: a communication technique and a system therefor for fusing, with IoT technology, a 5G communication system for supporting a data transmission rate higher than that of a 4G system. Provided is a method for installing a profile of a terminal having an embed universal integrated circuit card (eUICC) in a mobile communication system, the method comprising: requesting for an eUICC authentication certificate to an eUICC and receiving the eUICC authentication certificate; and transferring a profile package to the eUICC so as to install a profile, wherein the received eUICC authentication certificate further comprises an eUICC manufacturer (EUM) authentication certificate.

Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first internal electrodes and second internal electrodes disposed to face each other with one of the dielectric layers interposed therebetween; and first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively. The dielectric layer includes dielectric grains, a grain boundary is present between at least two dielectric grains of the dielectric grains, and a Si/Ti mole ratio in the grain boundary satisfies 15% to 40%.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.

Abstract: A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.