Abstract: A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.

Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.

Abstract: In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.

Abstract: An NFC (near field communication) device can include a resonance unit and an NFC chip. The resonance unit may communicate with an external device through an electromagnetic wave. The NFC chip can provide output data to the resonance unit, receive input data from the resonance unit, and can reduce a Q factor (quality factor) of the resonance unit when a signal receive operation is performed in a card mode, and can maintain the Q factor of the resonance unit in a reader mode and when a signal transmit operation is performed in the card mode.

Abstract: A magnetic tunnel junction (MTJ) structure includes a fixed layer pattern structure having a perpendicular magnetization direction, a tunnel barrier pattern on the fixed layer pattern structure, a free layer pattern on the tunnel barrier pattern, the free layer pattern having a perpendicular magnetization direction, a first surface magnetism induction pattern on the free layer pattern, the first surface magnetism induction pattern inducing a perpendicular magnetism in a surface of the free layer pattern, a conductive pattern on the first surface magnetism induction pattern, and a ferromagnetic pattern on the conductive pattern.

Abstract: A near field communications (NFC) device includes a receiving module and a transmitting module. The receiving module includes a receiver receiving an analog signal that includes a carrier signal and data, an analog-to-digital converter converting the analog signal to a digital signal, and a filter filtering the digital signal. The transmitting module includes a direct current-direct current (DC-DC) converter having an operating frequency belonging to a stop band of the filter, and a transmitter receiving power from the DC-DC converter and receiving a system clock signal.

Abstract: Operating an NFC device to communicate with an NFC tag may include converting the NFC device between operating in a standby mode or an active mode, based on whether communication between the NFC device and an NFC tag is failed while the NFC device is operating in an active mode, detecting an NFC tag based on a tag detection sensitivity associated with the NFC device operating in the standby mode, converting the NFC device to operating in the active mode when an NFC tag is detected in the standby mode and adaptively controlling the tag detection sensitivity based on one or more user environment parameters associated with the NFC device. Power consumption and the tag detection sensitivity may be optimized based on adaptively controlling the tag detection sensitivity based on the one or more user environment parameters.

Abstract: In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.

Abstract: A mobile device includes at least one internal device including a processor to control the mobile device, an area including a main battery, a first antenna to receive power wirelessly transferred from an auxiliary battery of an accessory coupled to the mobile device, and a power manager. The power manager selects the main battery or the auxiliary battery of the accessory as a power source for the at least one internal device, supplies the at least one internal device with power from the main battery when the main battery is selected as the power source, and supplies the at least one internal device with the power received through the first antenna when the auxiliary battery is selected as the power source.

Abstract: A near field communication (NFC) antenna includes a first antenna electrode and a second antenna electrode, and a loop coil. The first and second antenna electrodes are formed on a first surface of a substrate. The loop coil is formed on the first surface of the substrate, is directly coupled between the first antenna electrode and the second antenna electrode, and includes a first plurality of turns. The first antenna electrode is located inside each of the plurality of turns of the loop coil, and the second antenna electrode is located outside each of the plurality of turns of the loop coil. An imaginary line passing through the first antenna electrode and the second antenna electrode is parallel to one of edges of the substrate. Each of the first plurality of turns of the loop coil does not overlap each other.

Abstract: An integrated circuit for near field communication (NFC) is provided. The integrated circuit includes a semiconductor substrate; a first transmitter disposed on the semiconductor substrate and configured to operate in a first NFC card mode, an NFC reader mode, and a peer-to-peer mode; a second transmitter disposed on the semiconductor substrate and configured to operate in a second NFC card mode; first transmitting pins connected to the semiconductor substrate and configured to transmit an output signal of the first transmitter to a first NFC antenna; second transmitting pins connected to the semiconductor substrate and configured to transmit an output signal of the second transmitter to a second NFC antenna; and a logic circuit disposed on the semiconductor substrate and configured to receive a control signal, and control an operation of the first transmitter and an operation of the second transmitter based on the control signal.

Abstract: A method of operating a near-field communication (NFC) circuit, the method including: receiving an interference signal and a data signal through an antenna; adjusting magnitudes of the received interference signal and the received data signal; down-converting frequencies of the interference signal and the data signal, the magnitudes of which are adjusted; filtering the data signal by removing the frequency down-converted interference signal; and adjusting a magnitude of the filtered data signal. The adjusting of the magnitudes of the received interference signal and the received data signal may include adjusting the magnitudes of the interference signal and the data signal such that linearity of the data signal is maintained during signal processing performed on the interference signal and the data signal in the down-converting of the frequencies of the interference signal and the data signal, the filtering of the data signal, and the adjusting of the magnitude of the filtered data signal.

Abstract: Operating an NFC device to communicate with an NFC tag may include converting the NFC device between operating in a standby mode or an active mode, based on whether communication between the NFC device and an NFC tag is failed while the NFC device is operating in an active mode, detecting an NFC tag based on a tag detection sensitivity associated with the NFC device operating in the standby mode, converting the NFC device to operating in the active mode when an NFC tag is detected in the standby mode and adaptively controlling the tag detection sensitivity based on one or more user environment parameters associated with the NFC device. Power consumption and the tag detection sensitivity may be optimized based on adaptively controlling the tag detection sensitivity based on the one or more user environment parameters.

Abstract: The present invention relates to a joining method, and more specifically relates to a method for joining different kinds of plates that joins at least two plate members of which materials thereof are different from each other through laser welding. For this, a method for joining different kinds of plates according to an exemplary embodiment of the present invention may include disposing a first plate and a second plate, materials of which are different from each other, such that they are overlapped with each other, and joining the first plate and the second plate by irradiating a laser beam at a predetermined inclination angle and in a regular pattern onto the overlapped portion of the two plates.

Abstract: A method of laser welding where two steel sheets are welded by a laser beam after the two steel sheets are overlapped with a predetermined gap is disclosed. The method includes: a stitch welding step where a laser beam of focal region is irradiated along a welding portion of the upper steel sheet and the lower steel sheet such that a molten slot is formed at the upper steel sheet along the welding portion and an heat expansion portion is formed at the lower steel sheet along the welding portion by thermal conduction; and a pattern welding step where the laser beam of focal region is irradiated along the welding portion with a predetermined pattern such that an edge of the molten slot formed at the upper steel sheet is melted together with the heat expansion portion of the lower steel sheet so as to form a molten pool.

Abstract: A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.

Abstract: A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.

Abstract: A power transmission shaft which alleviates phenomenon in which stress is concentrated on a specific portion of a diaphragm to improve fatigue life span. The power transmission shaft connects a power apparatus and includes a flexible coupling, which is configured by a hub unit positioned inside in a radial direction. A rim unit is positioned outside in a radial direction of the hub unit. A flexible diaphragm unit is positioned between the hub unit and the rim unit. The thickness in the axial direction of the flexible diaphragm unit, from the hub unit toward the rim unit, becomes thinner then thicker to have a minimum thickness interval. The flexible diaphragm unit has a contoured first side on one side in the axial direction and a contoured second side on the other side. The first side has a first inflection point and the second side has a second inflection point.

Abstract: An antenna module including a first antenna configured to transmit and receive a plurality of signals, the first antenna including a first frame antenna segment including at least a part of a metal frame, the metal frame surrounding a body housing of an electronic device, and a first coil antenna segment connected to the first frame antenna segment, the first coil antenna segment including a first conductive coil may be provided.

Abstract: A resonance frequency of a near field communication (NFC) antenna module may be set to be equal to a first frequency by a resonance unit included in the NFC antenna module. The NFC module may include a matching circuit connected to the NFC antenna module. The matching circuit may include terminals exposed to the outside such that the antenna module is detachable from the matching circuit.