Abstract: Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.

Abstract: Disclosed herein is a composition comprising a brush polymer; where the brush polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and a block copolymer; where the block copolymer comprises a first block and a second block that are covalently bonded to each other; where the first block comprises a first polymer and a second block comprises a second polymer; where the first polymer comprises less than or equal to 10 atomic percent polysiloxane; where the second polymer comprises at least 15 atomic percent polysiloxane; where the brush polymer is chemically different from the first polymer and the second polymer; and where the first polymer is chemically different from the second polymer; and wherein the block copolymer is disposed upon the brush polymer.

Abstract: Photoresist overcoat compositions comprise: a quenching polymer wherein the quenching polymer comprises: a first unit having a basic moiety; and a second unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R2 is chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR3, wherein R3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR4— wherein R4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and an organic solvent; wherein the quenching polymer is present in the composition in an amount of from 80 to 100 wt % based on total solids of the overcoat composition The compositions have particul

Abstract: Disclosed herein is a method comprising disposing a mat composition on a surface of a semiconductor substrate; where the mat composition comprises a random copolymer comprising a first acrylate unit and a second unit; where the copolymer does not comprise a polystyrene or a polyepoxide; crosslinking the random copolymer; disposing a brush backfill composition on the substrate; such that the brush backfill composition and the mat composition alternate with each other; disposing on the brush backfill composition and on the mat composition a block copolymer that undergoes self assembly; and etching the block copolymer to create uniformly spaced channels in the semiconductor substrate.

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract: A transformative wavelength conversion medium is provided, comprising: a phosphor; and, a curable liquid component, wherein the curable liquid component, comprises: an aliphatic resin component, wherein the aliphatic resin component has an average of at least two epoxide groups per molecule; and, a curing agent; wherein the curable liquid component contains less than 0.5 wt % of monoepoxide molecules (based on the total weight of the aliphatic resin component); wherein the curable liquid component contains 1 to 90 wt % of polyepoxide molecules containing at least three epoxide groups per molecule (based on the total weight of the aliphatic resin component); and, wherein the curable liquid component is a liquid at 25° C. and atmospheric pressure; wherein the phosphor is dispersed in the curable liquid component.

Abstract: A transformative wavelength conversion medium is provided, comprising: a phosphor; and, a curable liquid component, wherein the curable liquid component, comprises: an aliphatic resin component, wherein the aliphatic resin component has an average of two epoxide groups per molecule; and, a curing agent; wherein the curable liquid component contains less than 0.5 wt % of monoepoxide molecules (based on the total weight of the aliphatic resin component); and, wherein the curable liquid component is a liquid at 25° C. and atmospheric pressure; and, wherein the phosphor is dispersed in the curable liquid component.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I): wherein: R1 represents hydrogen or a C1 to C3 alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Disclosed is a network device control and managing system and method. The network device control and managing system receives network device information and subscriber information from a database server of the network device control and managing system according to the manager's client information request and realizes hierarchical combined information. The system requests state information from the network device based on the state information request of the network device and receives the state information. The system requests a control from the network device based on the network device control request, receives a corresponding response message, and changes combined information. Therefore, the device states can be easily searched in the hierarchical manner (L3-L2-AP), and the problems of network devices can be quickly sensed. Also, software for the network devices is remotely updated, and the subscriber's after sales service request is remotely processed.

Abstract: Polymers include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety, photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are monomers, polymers, photoresist compositions and coated substrates which find use in the formation of photolithographic patterns by negative tone development. The monomers are of the following general formula (I): wherein: R1 represents hydrogen or methyl. The methods find particular applicability in the manufacture of semiconductor devices.