Abstract: Provided are monomers, polymers, photoresist compositions and coated substrates which find use in the formation of photolithographic patterns by negative tone development. The monomers are of the following general formula (I): wherein: R1 represents hydrogen or methyl. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are polymers that include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety. Also provided are photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Disclosed is a network device control and managing system and method. The network device control and managing system receives network device information and subscriber information from a database server of the network device control and managing system according to the manager's client information request and realizes hierarchical combined information. The system requests state information from the network device based on the state information request of the network device and receives the state information. The system requests a control from the network device based on the network device control request, receives a corresponding response message, and changes combined information. Therefore, the device states can be easily searched in the hierarchical manner (L3-L2-AP), and the problems of network devices can be quickly sensed. Also, software for the network devices is remotely updated, and the subscriber's after sales service request is remotely processed.

Abstract: A method for measuring the fundamental frequency component of a fault current or voltage, including measuring a fault current or voltage signal, which includes a DC-offset, a characteristic frequency component, a fundamental frequency component, and harmonics, with a predetermined sampling period, filtering the fault current or voltage signal to remove the harmonics, removing the fundamental frequency component from the filtered fault current or voltage signal, calculating the DC-offset and the characteristic frequency component with the fault current fault current or voltage signal wherein the fundamental frequency component is removed, and determining the fundamental frequency component by subtracting the calculated DC-offset and the characteristic frequency component from the filtered fault current or voltage signal.

Abstract: A method for measuring the fundamental frequency component of a fault current or voltage, including measuring a fault current or voltage signal, which includes a DC-offset, a characteristic frequency component, a fundamental frequency component, and harmonics, with a predetermined sampling period, filtering the fault current or voltage signal to remove the harmonics, removing the fundamental frequency component from the filtered fault current or voltage signal, calculating the DC-offset and the characteristic frequency component with the fault current fault current or voltage signal wherein the fundamental frequency component is removed, and determining the fundamental frequency component by subtracting the calculated DC-offset and the characteristic frequency component from the filtered fault current or voltage signal.