Abstract: A method for providing a status of a wireless network, including: receiving a wireless signal from an access point and status information of the access point; determining processing capacity information of the access point based on the status information of the access point; and displaying wireless network information with respect to the access point, the wireless network information including the processing capacity information of the access point and signal strength information of the received wireless signal.

Abstract: Disclosed are methods of manufacturing a metal wiring buried flexible substrate by using plasma and flexible substrates manufactured by the same. The method includes pre-treating a substrate by irradiating the plasma on the surface of the substrate (Step 1), forming a metal wiring on the pre-treated substrate in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the substrate including the metal wiring formed thereon in Step 2 and curing (Step 3), and separating the polymer layer formed in Step 3 from the substrate in Step 1 (Step 4). The metal wiring may be inserted into the flexible substrate, and the resistance of the wiring may be decreased. The metal wiring may be clearly separated from the substrate, and impurities on the substrate surface may be clearly removed. The flexible substrate may be easily separated by applying only physical force.

Abstract: Disclosed are a method of manufacturing a metal wiring buried flexible substrate and a flexible substrate manufactured by the same. The method includes coating a sacrificial layer including a polymer soluble in water or an organic solvent, or a photodegradable polymer on a substrate (Step 1), forming a metal wiring on the sacrificial layer in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the sacrificial layer including the metal wiring formed thereon in Step 2 and curing (Step 3) and separating the polymer layer in Step 3 from the substrate in Step 1 by removing through dissolving in the water or the organic solvent or photodegrading only the sacrificial layer present between the substrate in Step 1 and the polymer layer in Step 3 (Step 4).

Abstract: A method for providing a status of a wireless network, including: receiving a wireless signal from an access point and status information of the access point; determining processing capacity information of the access point based on the status information of the access point; and displaying wireless network information with respect to the access point, the wireless network information including the processing capacity information of the access point and signal strength information of the received wireless signal.

Abstract: A method for providing a status of a wireless network, including: receiving a wireless signal from an access point and status information of the access point; determining processing capacity information of the access point based on the status information of the access point; and displaying wireless network information with respect to the access point, the wireless network information including the processing capacity information of the access point and signal strength information of the received wireless signal.

Abstract: Discussed is a an Osseo-inductive metal implant for a living body having a layer of metal oxide and a layer of bio-active material formed in this order on the surface of the metal implant.

Abstract: This invention provides an Osseo-inductive metal implant for a living body and the producing method thereof and, more particularly, the Osseo-inductive metal implant for a living body according to the present invention is produced by forming, on the surface of the metal implant, the layer of metal oxide and the layer of bio-active material injected.

Abstract: A method for providing a status of a wireless network, including: receiving a wireless signal from an access point and status information of the access point; determining processing capacity information of the access point based on the status information of the access point; and displaying wireless network information with respect to the access point, the wireless network information including the processing capacity information of the access point and signal strength information of the received wireless signal.

Abstract: Disclosed are methods or manufacturing a metal wiring buried flexible substrate by using plasma and flexible substrates manufactured by the same. The method includes pre-treating a substrate by irradiating the plasma on the surface of the substrate (Step 1), forming a metal wiring on the pre-treated substrate in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the substrate including the metal wiring formed thereon in Step 2 and curing (Step 3), and separating the polymer layer formed in Step 3 from the substrate in Step 1 (Step 4), The metal wiring may be inserted into the flexible substrate, and the resistance of the wiring may be decreased. The metal wiring may be clearly separated from the substrate, and impurities on the substrate surface may be clearly removed. The flexible substrate may be easily separated by applying only physical force.

Abstract: Disclosed are a method of manufacturing a metal wiring buried flexible substrate and a flexible substrate manufactured by the same. The method includes coating a sacrificial layer including a polymer soluble in water or an organic solvent, or a photodegradable polymer on a substrate (Step 1), forming a metal wiring on the sacrificial layer in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the sacrificial layer including the metal wiring formed thereon in Step 2 and curing (Step 3) and separating the polymer layer in Step 3 from the substrate in Step 1 by removing through dissolving in the water or the organic solvent or photodegrading only the sacrificial layer present between the substrate in Step 1 and the polymer layer in Step 3 (Step 4).

Abstract: A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.

Abstract: Embodiments of the present invention may provide an apparatus and a method for transmitting an orthogonal frequency division multiplexing access (OFDMA) symbol in an OFDMA system. A bandwidth limit parameter for generating an OFDMA symbol may be adaptively determined based on the received signal quality of a receiver. An OFDMA symbol may be generated based on the bandwidth limit parameter and transmitted to the receiver. According to embodiments, when the received signal quality of the receiver is bad, the bandwidth limit parameter may be first adjusted before the modulation scheme is changed to have a lower data rate. In such a case, the downlink date rate may be maintained with enhancing the received signal quality of the receiver.

Abstract: A p-type NiO conducting film for an organic solar cell, a preparation method thereof, and an organic solar cell using the same and having enhanced power conversion efficiency, are provided, wherein the NiO conducting film is fabricated by vacuum sputtering in which nickel or nickel oxide is used as a target material, and argon, oxygen or the mixed gas of the argon and the oxygen is supplied. The p-type NiO conducting film may be easily prepared by vacuum sputtering, and since a n-type conducting film is prepared by simply coating sol-phase precursor solution, the NiO conducting film and the organic solar cells having the NiO conducting film in the order of the NiO conducting film, a photoactive layer, and a n-type conducting film, have enhanced electric energy conversion. As a result, the provided disclosure is useful particularly when applied in organic solar cells and organic light emitting devices.

Abstract: A multi-layer thin film for encapsulation and the method thereof are provided. The multi-layer thin film for encapsulation includes a protective layer composed of aluminum oxide, a single or double barrier layer composed of silicon nitride (SiNx), and a mechanical protective layer composed of silicon dioxide (SiO2). The multi-layer thin film can be economically fabricated by using the existing equipment, and has a high level of light transmission over 85% while showing a low level of oxygen and moisture penetration. Additionally, due to superior adhesive strength between the thin films, and high resistance against impacts by heat or ion during a fabricating process, reliability of fabrication is enhanced, and it can thus efficiently used in encapsulating an organic light-emitting device (OLED), a flexible organic light emitting device (FOLED) in a display field, and the cells such as a thin film battery and a solar cell.

Abstract: A method for manufacturing a semiconductor device includes forming an oxide film uniformly in a trench in the device isolation by, for example, a radical oxidation process. The method also includes increasing the thickness of the oxide film positioned at recess sidewalls by forming a gate oxide film. Manufacturing the device according to this method will prevent junction leakage and maintain a gate oxidation intensity characteristic that will improve the refresh characteristic of the device.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.

Abstract: A method for manufacturing a semiconductor device includes forming an oxide film uniformly in a trench in the device isolation by, for example, a radical oxidation process. The method also includes increasing the thickness of the oxide film positioned at recess sidewalls by forming a gate oxide film. Manufacturing the device according to this method will prevent junction leakage and maintain a gate oxidation intensity characteristic that will improve the refresh characteristic of the device.

Abstract: A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitride film pattern as a mask to form a trench having a vertical sidewall in a portion of the substrate predetermined to be a device isolation region, performing a plasma treatment process on the sidewall of the trench to form a plasma oxide film, forming an oxide film over the resulting structure to fill the trench, and performing a planarization process over the resulting structure.

Abstract: A method for manufacturing a semiconductor device comprises: forming an interlayer insulating film including a storage node contact plug over a semiconductor substrate; forming an etching barrier film, a sacrificial insulating film, and a hard mask film over the storage node contact plug and the interlayer insulating film; forming a first storage node region by removing a portion of the sacrificial insulating film and the hard mask film by an etching process such that a polymer film is formed at a sidewall of the hard mask film and the sacrificial insulating film; and forming a second storage node region by removing the remaining portions of the sacrificial insulating film and the etching barrier film, thereby exposing the storage node contact plug. The method prevents a bowing phenomenon in the etching process for forming a storage node region and thus allows storage nodes having substantially vertical profiles to be formed.