Abstract: Disclosed herein is a process for preparing a metal or nonmetal phthalocyanine by using both microwave and ultrasonic wave energy in the presence of a solvent, or by using microwave energy in the absence of a solvent. Specifically, according to the process, anhydrous phthalic acid, phthalimide, 1,3-diiminoisoindoline, 1,2-dicyanobenzene, an halogen derivative thereof, an alkyl_derivative thereof or an alkoxy derivative thereof is mixed with a metal chloride or an alkoxy metal at 130250° C. for 0.2515 hours by using microwave at a frequency of 0.1-1000 Hz and a power of 100-3,000 W and ultrasonic wave at a frequency of 1-1,000 GHz and a power of 100-5,000 W in the presence of a solvent, or by using microwave at a frequency of 0.1-100 GHz and a power of 100-4,000 W in the absence of a solvent. Further disclosed is an apparatus for preparing a metal or nonmetal phthalocyanine in the absence or presence of solvent.

Abstract: Disclosed herein is a method for preparing oxytitanium phthalocyanine as a charge generating material. The method comprises the steps of mixing 30-100 wt % sulfuric acid and an oxytitanium phthalocyanine crude in a mixing ratio between 100:1 and 1:1, homogeneously grinding the mixture in a wet grinder filled with zirconia or glass beads as grinding media at ?20° C.˜60° C. for 0.1˜24 hours, and removing the grinding media from the ground mixture using a solvent. According to the method, oxytitanium phthalocyanine usable as a high-quality charge generating material can be prepared without the use of expensive and difficult-to-handle reactants, such as trifluoroacetic acid and pentafluoropropionic acid. Further disclosed is an oxytitanium phthalocyanine charge generating material prepared by the method.

Abstract: An inductor is provided which includes a plurality of via holes vertically passing through a substrate, the substrate having insulating properties, vertical conductive portions filling the via holes, and horizontal conductive portions connecting each individual vertical conductive portions at the top and the bottom of the substrate to form a single coil structure with the vertical conductive portions.

Abstract: A mobile communication device is disclosed, by which configurations of loaded antenna and card are enhanced. The present invention includes a body including elements performing wireless mobile communications and auxiliary functions, a socket provided to one side of the body to compensate functions of the body and to detachably receive a card for storing data, and a plane type antenna connected to a rim of the socket to transmit/receive wireless communication signals.

Abstract: The present invention relates to a WLP fabrication method capable of welding a lid wafer with a device wafer by using laser illumination. The WLP fabrication method can rapidly weld bonding metal strips of device and lid wafers with each other in order to couple the lid wafer with the device wafer while sealing an internal cavity from the outside without giving any thermal effect to a drive unit in the device wafer.

Abstract: Provided is an active load circuit of a voltage gain amplifier, which allows a high voltage gain with a low supply voltage operation in high-frequency range. The active load circuit includes a PMOS transistor which is connected between the amplifying unit and a power supply voltage and functions as a load element in a low frequency range; a negative feedback buffering unit which is connected to the gate of the PMOS transistor and functions as a common drain amplifier to stabilize the output voltage of the voltage gain amplifier and drive the voltage gain amplifier at a low voltage; and a capacitor which is connected to the negative feedback buffering unit and compensates for both an impedance and a frequency characteristics when the voltage gain amplifier operates in a high frequency range.

Abstract: Disclosed herein is an FBAR based duplexer device and a manufacturing method thereof, which can achieve miniaturization, and reduction of a manufacturing cost and enhancement of a yield due to a simplified process. According to the present invention, first, a plurality of FBAR chips are prepared. Each of the FBAR chips comprises a substrate, air gaps and piezoelectric layer unit, which are successively arranged, a plurality of electrode pads electrically connected to the piezoelectric layer unit, and bump balls formed on the electrode pads in a one to one ratio. Then, a duplexer substrate having a duplexing circuit is prepared, and a plurality of the FBAR chips come into contact with the duplexer substrate. In this state, they are reversed so that the substrates of the FBAR chips face upward, and the bump balls are bonded to the duplexer substrate.

Abstract: Provided is a CMOS exponential function generating circuit capable of compensating for the exponential function characteristic according to temperature variations. The exponential function generating circuit includes an voltage scaler scaling the value of an external gain control voltage signal, an exponential function generating unit generating exponential function current and voltage in response to a signal output from the voltage scaler, a reference voltage generator providing a reference voltage to the exponential function generating unit, and a temperature compensator compensating for the exponential function characteristic according to temperature variations.

Abstract: Disclosed herein is a film bulk acoustic resonator (FBAR), an FBAR based duplexer device, and a manufacturing method thereof, which a plurality of sacrificial layer units are formed on a substrate wafer so as to be spaced apart from one another at regular distances, and device functional portions are formed on the sacrificial layer units, respectively. The device functional portions have a piezoelectric layer unit and a plurality of electrodes. Then, side wall and roof of protective formed by the use of dry film. After hardening the dry film, the wafer is cut into a plurality of the wafer sections so as to contain the device functional portions, respectively.

Abstract: Disclosed herein is a wafer level package type film bulk acoustic resonator (FBAR) device and a method for manufacturing the FBAR device, which can achieve miniaturization and reduction of a manufacturing cost due to a simplified process. The FBAR device comprises a substrate having a certain size, at least one device functional portion performing a resonance function by responding to electrical signals applied from the outside, the device functional portion being formed along a center portion of the substrate while defining a certain air gap therein, plural external electrodes formed on an upper surface of the substrate substantially coming into contact with both opposite edges of the upper surface, the external electrodes being electrically connected to the device functional portion, and a cap bonded onto the substrate so as to function as a cover for covering a remaining portion of the substrate except for the plural external electrodes.