Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.

Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.

Abstract: A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.

Abstract: A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.

Abstract: The present invention relates to a perovskite-based solar cell using graphene as a material for a transparent conductive electrode. The perovskite-based solar cell achieves a maximum conversion efficiency of ?17% through an appropriate combination of energy bands of a graphene electrode, a hole transport layer, a perovskite, an electron transport layer, and a metal electrode.

Abstract: A perovskite solar cell of the present invention has a structure in which an electron transport layer including a fullerene or a fullerene derivative is formed on a first electrode including a transparent conductive substrate and a blocking layer, such as a BCP layer, is absent, achieving improved electron transporting properties. The fullerene or fullerene derivative can perform a role as a blocking layer. Therefore, the use of the fullerene or fullerene derivative enables rapid fabrication of the solar cell with high efficiency.

Abstract: An organic photovoltaic cell is provided. The organic photovoltaic cell includes a first electrode layer formed on a substrate, metal nanoparticles bound to the surface of the first electrode layer, a hole transport layer formed on the metal nanoparticles to form a nano-bump structure together with the metal nanoparticles, a photoactive layer formed on the hole transport layer, and a second electrode layer formed on the photoactive layer. The nano-bump structure enhances plasmonic effects, leading to an increase in photocurrent. The photoactive layer has an uneven structure. This uneven structure allows the photoactive layer to absorb larger amount of light than an even structure does, leading to an improvement in the photovoltaic efficiency of the organic photovoltaic cell. In addition, the nano-bump structure can be formed by simple dry aerosol deposition without involving a complicated exposure or transfer process, contributing to a marked improvement in economic efficiency.

Abstract: An electrophoretic display device includes a switching element on a substrate including a display area having a pixel region and a non-display area at a periphery of the display area, a passivation layer covering the switching element, a pixel electrode on the passivation layer and connected to the switching element, an electrophoresis film on the pixel electrode and including an ink layer and a base film, wherein the ink layer includes a plurality of charged particles, and the base film is formed of polyethylene terephthalate, a common electrode for generating an electric field with the pixel electrode to drive the electrophoresis film, and a color filter layer directly on the electrophoresis film, wherein the color filter layer is formed under temperatures of less than 100 degrees of Celsius.

Abstract: An electrophoretic display device includes a switching element on a substrate including a display area having a pixel region and a non-display area at a periphery of the display area, a passivation layer covering the switching element, a pixel electrode on the passivation layer and connected to the switching element, an electrophoresis film on the pixel electrode and including an ink layer and a base film, wherein the ink layer includes a plurality of charged particles, and the base film is formed of polyethylene terephthalate, a common electrode for generating an electric field with the pixel electrode to drive the electrophoresis film, and a color filter layer directly on the electrophoresis film, wherein the color filter layer is formed under temperatures of less than 100 degrees of Celsius.

Abstract: An electrophoretic display device includes a switching element on a substrate including a display area having a pixel region and a non-display area at a periphery of the display area, a passivation layer covering the switching element, a pixel electrode on the passivation layer and connected to the switching element, an electrophoresis film on the pixel electrode and including an ink layer and a base film, wherein the ink layer includes a plurality of charged particles, and the base film is formed of polyethylene terephthalate, a common electrode for generating an electric field with the pixel electrode to drive the electrophoresis film, and a color filter layer directly on the electrophoresis film, wherein the color filter layer is formed under temperatures of less than 100 degrees of Celsius.

Abstract: Disclosed is a locking device capable of securing a bag for securing both an item storing body and a cover used to seal an opening of a bag in a closed configuration to protect the contents within the bag. The cover assembles a locking insertion member and the elastic fastening member. The item storing body assembles a fastening member, a lower cap member, an elastic locking member and an upper cap member.

Abstract: The present disclosure relates to a touch-type electrophoretic display device using a photo sensor, and the construction thereof may be configured by including a display substrate including a switching element connected to a gate line and a data line intersected with the gate line, a pixel electrode electrically connected to the switching element, and a first and a second photo sensor elements having a different channel width and length, the first and the second photo sensor elements being connected to the gate line and the data line for sensing an amount of light; and an electrophoretic film including charged particles, the electrophoretic film being coupled to the display substrate.

Abstract: A method of fabricating an electrophoretic display device includes forming a gate electrode, a gate line, a data line and a thin film transistor on a substrate having a display region, a non-display region at a periphery of the display region and a cut portion at an outer region of the non-display region; forming a passivation layer over the thin film transistor; forming a pixel electrode connected to the thin film transistor; forming an align mark in the cut portion; attaching an electrophoresis film onto the pixel electrode; forming a color filter layer on the base film using the align mark; wherein the step of forming the align mark is simultaneously performed with one of the step of forming the gate line, the step of forming the data line, and the step of forming the pixel electrode.

Abstract: A water filtering device equipped with a water level adjustment unit is provided. The water filtering device includes an external air inlet through which dust-containing air flows in, a dust separator communicating with the external air inlet and separating dust in the inflow air, exhaust outlets communicating with the dust separator and discharging the air from which the dust has been separated, a dust container communicating with the dust separator and being filled with water, and a water level adjustment unit installed in the dust container to adjust the level of the water in the dust container. The water level adjustment unit includes a supercharged water drainage tube installed on a bottom of the dust container, and a manual opening/closing device for adjusting the level of the water through the supercharged water drainage tube.

Abstract: An electrophoretic display device includes a switching element on a substrate including a display area having a pixel region and a non-display area at a periphery of the display area, a passivation layer covering the switching element, a pixel electrode on the passivation layer and connected to the switching element, an electrophoresis film on the pixel electrode and including an ink layer and a base film, wherein the ink layer includes a plurality of charged particles, and the base film is formed of polyethylene terephthalate, a common electrode for generating an electric field with the pixel electrode to drive the electrophoresis film, and a color filter layer directly on the electrophoresis film, wherein the color filter layer is formed under temperatures of less than 100 degrees of Celsius.

Abstract: The present disclosure relates to a touch-type electrophoretic display device using a photo sensor, and the construction thereof may be configured by including a display substrate including a switching element connected to a gate line and a data line intersected with the gate line, a pixel electrode electrically connected to the switching element, and a first and a second photo sensor elements having a different channel width and length, the first and the second photo sensor elements being connected to the gate line and the data line for sensing an amount of light; and an electrophoretic film including charged particles, the electrophoretic film being coupled to the display substrate.

Abstract: A method of fabricating an electrophoretic display device includes forming a gate electrode, a gate line, a data line and a thin film transistor having a semiconductor layer, a source electrode and a drain electrode on a substrate having a display region, the thin film transistor connected to the gate and data lines; forming a gate insulating layer on an entire surface of the substrate including the gate electrode and the gate line; forming a passivation layer over the thin film transistor; forming a pixel electrode connected to the drain electrode of the thin film transistor; forming an align; attaching an electrophoresis film including an adhesive layer, an ink layer having a charged particle, a common electrode and a base film onto the pixel electrode, the ink layer disposed between the adhesive layer and the base film, the adhesive layer being on the pixel electrode; forming a color filter layer on the base film using the align mark for aligning the color filter layer with the pixel regions, the color fil

Abstract: The embodiments of the invention relate to a MoSi2-SiC nanocomposite coating layer formed on surfaces of refractory metals such as Mo, Nb, Ta, W and their alloys. The MoSi2-SiC nanocomposite coating layer is manufactured by forming a molybdenum carbide (MoC and MoC2) coating layers on the surfaces of the substrates at high temperature, and the subsequent vapor-deposition of Si. The MoSi2-SiC nanocomposite coating layer has a microstructure in which SiC particles are mostly located on the equiaxed MoSi2 grain boundary. The MoSi2-SiC nanocomposite coating layer can have a close thermal expansion coefficient to that of the substrate by controlling a volume fraction of SiC particles exisiting in the nanocomposite coating.

Abstract: A NbSi2-base nanocomposite coating formed on the surface of niobium or niobium-base alloys is disclosed. The nanocomposite coating layer is manufactured by forming a niobium carbide layers or a niobium nitride layers by depositing of carbon or nitrogen on the surface, and then depositing silicon. The nanocomposite coating layer has a microstructure that SiC or Si3N4 particles are mostly precipitated on an equiaxed NbSi2 grain boundary. The thermal expansion coefficients of NbSi2-base nanocomposite coating layers become close to that of the substrates by adjusting the volume fraction of SiC or Si3N4 particles in the nanocomposite coating layers. Accordingly, the generation of cracks caused by thermal stress due to the mismatch in thermal expansion coefficient between the NbSi2-base nanocomposite coatings and the substrates can be suppressed, thereby improving the high-temperature oxidation resistance in the repeated thermal cycling use of the NbSi2-base nanocomposite coated substrates.

Abstract: Disclosed are the MoSi2—SiC nanocomposite coating layer formed on surfaces of refractory metals such as Mo, Nb, Ta, W and their alloys. The MoSi2—SiC nanocomposite coating layer is manufactured by forming a molybdenum carbide (MoC and MoC2) coating layers on the surfaces of the substrates at high temperature, and the subsequent vapor-deposition of Si. The MoSi2—SiC nanocomposite coating layer has a microstructure in which SiC particles are mostly located on the equiaxed MoSi2 grain boundary. The MoSi2—SiC nanocomposite coating layer can have a close thermal expansion coefficient to that of the substrate by controlling a volume fraction of SiC particles exisiting in the nanocomposite coating. As a result, the generation of cracks due to the mismatch in the thermal expansion coefficients between the substrate and the nanocomposite coating layer is suppressed and the high-temperature repeated thermal cyclic oxidation resistance and the low-temperature oxidation resistance of the coated substrate are improved.