Abstract: An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

Abstract: A technique for transmitting a video stream between a first electronic device and a second electronic device is provided. The first device receives an encoded video stream and determines whether an encoding format of the encoded video stream is a format decodable by a second electronic device. If the format is decodable, the encoded video stream is transmitted without a re-encoding operation to the second device. The video stream is displayed at the first device delayed by a determined delay time enabling the video stream to be displayed at the second device substantially synchronized with the display at the first device.

Abstract: In a method of forming a pattern of a semiconductor device, a first mask layer and an anti-reflective coating layer may be sequentially formed on a substrate. A photoresist layer may be formed on the anti-reflective coating layer. The photoresist layer may be exposed and developed to form a first preliminary photoresist pattern. A first ion beam etching process may be performed on the first preliminary photoresist pattern to form a second preliminary photoresist pattern. A second ion beam etching process may be performed on the second preliminary photoresist pattern to form a photoresist pattern. A second incident angle of an ion beam in the second ion beam etching process may be greater than a first incident angle of an ion beam in the first ion beam etching process. The anti-reflective coating layer and the first mask layer may be etched using the photoresist pattern as an etching mask to form a mask structure.

Abstract: A method for forming a pattern, the method including forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer.

Abstract: Disclosed is a light emitting diode including a plurality of light emitting diode elements and a method of fabricating the same. The light emitting diode includes: a substrate; a plurality of light emitting diode elements disposed on the substrate; interconnection lines connecting the light emitting diode elements to each other, wherein the plurality of light emitting diode elements comprise outer light emitting diode elements aligned along an edge of the substrate, each of the outer light emitting diode elements comprises an inner face directed towards an adjacent light emitting diode element and an outer face disposed adjacent the edge of the substrate and directed towards an outside of the substrate, and the inner face of at least one of the outer light emitting diode elements comprises a more gently slanted side surface than the outer face thereof.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Abstract: A semiconductor memory device that includes at least a lower contact plug on a semiconductor substrate, a magnetic tunnel junction of the lower contact plug, and a barrier pattern on a sidewall of the lower contact plug may further include an insulation pattern on the sidewall of the lower contact plug. The insulation pattern may be between the barrier pattern and the magnetic tunnel junction pattern. The insulation pattern may include an upper portion and a lower portion whose width is greater than a width of the upper portion.

Abstract: Data storage devices are provided. A data storage device includes a dielectric layer on a substrate. The data storage device includes a plurality of data storage structures on the dielectric layer. The data storage device includes a conductive material on the dielectric layer. Moreover, the data storage device includes an insulation layer on the conductive material.

Abstract: The present invention relates to a composition, containing, as an active ingredient, high-hardness mineral water prepared from salty underground water or deep-sea water, for preventing or alleviating a decrease in blood pressure or symptoms related thereto. According to the present invention, the high-hardness mineral water prepared from salty underground water or deep-sea water, especially, prevents a rapid decrease in blood pressure or mitigates the degree of decrease in blood pressure, during or after exercise, and thus can be used to prevent or alleviate symptoms related to a rapid decrease in blood pressure during or after exercise.

Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.

Abstract: A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.

Abstract: Provided is an hybrid solar heat absorption cooling system comprising: an absorption refrigerator; a solar heat steam generator configured to generate steam using solar heat; a daytime steam supplying unit configured to supply steam generated by the solar heat steam generator during the day as a heat source for the absorption refrigerator; a daytime hot water storage tank configured to store hot water discharged from the absorption refrigerator during the day; a nighttime hot water supplying unit configured to supply hot water stored in the daytime hot water storage tank during the night as a heat source for the absorption refrigerator; a nighttime hot water storage tank configured to store hot water discharged from the absorption refrigerator during the night; and a daytime hot water supplying unit configured to supply hot water stored in the nighttime hot water storage tank during the day to the solar heat steam generator.

Abstract: Disclosed is a metal oxide semiconductor gas sensor having a nanostructure, the metal oxide semiconductor gas sensor including: a substrate; a first electrode formed on the substrate; a gas sensing layer provided on the first electrode, made of a metal oxide semiconductor which has a nanostructure and of which electrical conductivity changes when the metal oxide semiconductor reacts with gas to be sensed, and formed by oblique angle deposition; a second electrode formed on the metal oxide semiconductor; and a control unit for measuring the electrical conductivity of the gas sensing layer to sense the gas by applying a predetermined amount of current through the first and the second electrodes.