Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.

Abstract: A single thermal energy storage tank is used so that costs can be reduced and an installation space can also be reduced compared to a case where two tanks, i.e., a high temperature tank and a low temperature tank are provided. In addition, the single thermal energy storage tank includes a porous block so that passage of molten salt can be more easily performed and flow pressure drop can be reduced. In addition, the porous block is configured by stacking a plurality of unit blocks so that the capacity of the single thermal energy storage tank can be easily adjusted. Furthermore, a plurality of single thermal energy storage tanks are connected in parallel so that the plurality of single thermal energy storage tanks can be selectively used according to an operation load and thus the solar thermal power generation system can easily cope with the operation load.

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other to expose a surface of the substrate, a first transparent layer disposed on and electrically connected to the first light emitting cell, first connection section disposed on a portion of the first light emitting cell, a second connection section disposed on a portion of the second light emitting cell, a first interconnection and a second interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the first and second interconnections and a side surface of the first light emitting cell.

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Abstract: An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.

Abstract: A memory device including a substrate, an insulating layer on the substrate, the insulating layer including a first region having a first top surface and a second region having a second top surface, the second top surface being lower than the first top surface with respect to the substrate, the first region including a first through hole penetrating therethrough, the second region including a second through hole penetrating therethrough, a first conductive pattern filling the first through hole, a second conductive pattern at least partially filling the second through hole, a magnetic tunnel junction pattern on the first conductive pattern, and a contact plug coupled to the second conductive pattern may be provided. Further, a method of fabricating the memory device also may be provided.

Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.

Abstract: A chuck assembly includes a chuck to hold a substrate, and a pillar coupled to the chuck to support the chuck, an axis of the pillar passing through a center of the pillar in a longitudinal direction of the pillar, wherein the chuck has a top surface, which is inclined with respect to the axis of the pillar, the top surface of the chuck being precessionally rotatable about the axis of the pillar.

Abstract: A method for forming a pattern, the method including forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer.

Abstract: A memory device including a substrate, an insulating layer on the substrate, the insulating layer including a first region having a first top surface and a second region having a second top surface, the second top surface being lower than the first top surface with respect to the substrate, the first region including a first through hole penetrating therethrough, the second region including a second through hole penetrating therethrough, a first conductive pattern filling the first through hole, a second conductive pattern at least partially filling the second through hole, a magnetic tunnel junction pattern on the first conductive pattern, and a contact plug coupled to the second conductive pattern may be provided. Further, a method of fabricating the memory device also may be provided.

Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.

Abstract: The present invention relates to a functional beverage including high hardness mineral water produced from salty underground water or deep seawater as an effective ingredient. The functional beverage of the present invention may not only impart a refreshing sensation in the mouth upon consumption, but may also effectively remove fatigue-causing substances such as lactic acid and free oxygen radicals and increase ATP production in the body, and vitalize one's lifestyle and improve exercise capacity and cognitive functions. The functional beverage of the present invention may show the effects of improving or maintaining anti-inflammatory and immune functions.