Abstract: Apparatus and method for configuring a screen for a video call using a facial expression by recognizing a face from an image, calculating facial expression information for an expression of the recognized face, and determining whether there is a change in expression of the recognized face by comparing the calculated facial expression information with reference expression information preset to determine a change in expression of the face. If there is a change in expression of the recognized face, the apparatus and method selects a video image corresponding to the changed expression in the video call screen, and reconfigures the video call screen using the selected video image, making it possible for a user to conveniently select an image of the interested person without taking extensive action, and preventing a wrong image from being selected due to the unintended user facial movement.

Abstract: Disclosed herein is a transformer having a heat radiation function. The transformer includes a pair of cores having an E-shape and facing and contacting each other to form central pillars and outer peripheral parts, a transforming coil part wound on the central pillars of the pair of cores and dropping voltage, and a heat radiation pipe formed to have a cylindrical shape and positioned inward from the transforming coil part to radiate heat generated from the transforming coil part, thereby well discharging heat generated from the coil.

Abstract: A wafer inspection method comprises: performing an exposure process on a wafer partitioned into fields, wherein the exposure process is performed on a first plurality of the fields in a first scan direction and wherein the exposure process is performed on a second plurality of the fields in a second scan direction; storing scan direction information for the first plurality of fields and the second plurality of fields corresponding to whether the exposure process is performed in the first scan direction or in the second scan direction; obtaining image information on the surface of the wafer subjected to the exposure process; determining whether a repetitive defect pattern is present in the image information; and determining whether the repetitive defect pattern is dependent on scan direction by identifying a correlation between the presence of repetitive defect patterns on the wafer and the scan direction information.

Abstract: Disclosed herein is a charge module for charging a high-capacity battery. The charge module according to the exemplary embodiment of the present invention includes: a heat sink; a fan cover covering the top of the heat sink; a fan mounted on the upper center of the fan cover; and a heat pipe inserted into the side wall of the heat sink to dissipate heat from the side wall of the heat sink through the circulation of refrigerants.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: An electrode assembly comprises a first electrode including a first electrode current collector and a first electrode active material layer, a second electrode including a second electrode current collector and a second electrode active material layer, a separator disposed between the first electrode and the second electrode, and an electrode absorbing member in contact with the first electrode.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.

Abstract: A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

Abstract: A method and apparatus are provided for enhancing the readability of a character. The method includes determining ambient light of a mobile terminal and controlling background color and character color of a character image according to the determined ambient light. The method may further include performing an additional control according to the types of displays when controlling the background color and character color. Through this, it is possible to display a character image with enhanced visibility, while minimizing current consumption.

Abstract: A method for compensating an image produced by image means for implementing image information takes account of ambient illumination. Luminance of external background illumination around the image means is measured. The measured luminance of the background illumination is compared with preset tristimulus values and a reflectance factor of the image means, a comparison result is computed, and a control signal is generated to compensate luminance and chroma of an image. Luminance and chroma of the image means are compensated in response to the control signal.

Abstract: Disclosed herein is a radiating package module for an exothermic element. The radiating package module includes a heat conducting plate which has a groove of an internal thread shape, with the exothermic element being mounted on a surface of the heat conducting plate. A heat pipe is inserted into the groove in a screw-type coupling manner and has a coupling part of an external thread shape. An adhesive is applied between the groove and the coupling part. A cooling unit is coupled to an end of the heat pipe. The radiating package module maintains the reliability with which the radiating package radiates heat and improves structural reliability.

Abstract: A method and an apparatus for displaying a plurality of different images in a mobile terminal in an external display device and a display unit in various modes. The mobile terminal operates according to a Different Image In and Out (DIIO) mode when the external display device is connected to the mobile terminal. When the external display device is not connected to the mobile terminal, the mobile terminal displays the plurality of different images in the display unit of the mobile terminal by operating according to a Picture-In-Picture (PIP) mode or an Overlay mode, so as to take into consideration size limitations of the display unit of the mobile terminal.

Abstract: A manufacturing method of an image sensor of vertical type is provided that includes: forming an insulation layer with a metal wiring and a contact plug therein on a first substrate; bonding a second substrate having an image sensing unit over the insulation layer; forming a trench in the second substrate to divide the image sensing unit for each pixel; forming a PTI by gap-filling the trench with insulating material; forming a first material layer over the PTI, the image sensing unit, and the insulation layer; and forming a second material layer over the first material layer and performing a deuterium annealing process thereon. The crystal defects of the substrate generated when performing the trench etching on the donor substrate to define unit pixels are cured by performing the deuterium annealing process, making it possible to improve the sensitivity and illumination characteristics of the image sensor of vertical type.

Abstract: An image sensor and a method for manufacturing the same are provided. In the image sensor, a semiconductor substrate has a pixel region and a peripheral region defined by a first device isolation layer. First and second photodiode patterns are formed on the pixel region and are connected to lower metal lines to first and second readout circuitries. The first photodiode pattern performs as an active photodiode and the second photodiode pattern functions as a dummy pixel. The dummy pixel can measure leakage current.

Abstract: An image sensor includes a semiconductor substrate including circuitry, an interlayer dielectric including metal lines arranged on the semiconductor substrate, crystalline photodiode patterns arranged on the interlayer dielectric such that the photodiode patterns are connected to the metal lines, hard mask patterns arranged on the respective photodiode patterns, a device-isolation trench interposed between the adjacent photodiode patterns, to isolate the photodiode patterns from each other, a barrier film implanted with impurity ions, arranged into the inner wall of the device-isolation trench, and a device-isolation insulating layer arranged over the interlayer dielectric including the photodiode pattern and the device-isolation trench.

Abstract: Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

Abstract: An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.