Abstract: A puzzle assembly which can be adjust the degree of difficulty is disclosed. The disclosed puzzle assembly comprises a rotation shaft, a plurality of rotation plate members having slide grooves on the outer circumference and inserted into the rotation shaft, a plurality of puzzle pieces engaged with the slide grooves movably, wherein at least two of the rotation plate members are coupled together and rotate simultaneously.

Abstract: An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

Abstract: A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

Abstract: A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H2, Ar, He, Xe, O2, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.

Abstract: Provided are a microlens mask of an image sensor and a method for forming a microlens using the same. In the method, an insulating layer is formed on a semiconductor substrate comprising a photodiode and a transistor. A passivation layer is formed on the insulating layer. A color filter layer is formed on the insulating layer vertically corresponding to the photodiode through the passivation layer. A microlens photoresist layer is formed over an entire surface of the semiconductor substrate. A microlens mask is formed on the microlens photoresist corresponding to the color filter layer. A one-time exposure process is performed at a light intensity of about 450/0 to about 550/0 dose/focus. The microlens photoresist layer is patterned to form a patterned microlens photoresist layer by removing the photoresist subjected to the exposure process. The patterned microlens photoresist layer is reflowed to form the microlens.

Abstract: A manufacturing method of an image sensor of vertical type is provided that includes: forming an insulation layer with a metal wiring and a contact plug therein on a first substrate; bonding a second substrate having an image sensing unit over the insulation layer; forming a trench in the second substrate to divide the image sensing unit for each pixel; forming a PTI by gap-filling the trench with insulating material; forming a first material layer over the PTI, the image sensing unit, and the insulation layer; and forming a second material layer over the first material layer and performing a deuterium annealing process thereon. The crystal defects of the substrate generated when performing the trench etching on the donor substrate to define unit pixels are cured by performing the deuterium annealing process, making it possible to improve the sensitivity and illumination characteristics of the image sensor of vertical type.

Abstract: An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

Abstract: Disclosed are a printed circuit board and a manufacturing method thereof. The manufacturing method of a printed circuit board includes: mounting an electronic device on an upper surface of an adhesive layer; laminating an insulator on an upper side of the electronic device and a lower side of the adhesive layer, respectively, such that the electronic device is buried; and forming a circuit pattern and a via on the insulator.

Abstract: A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

Abstract: An image sensor and a method for manufacturing an image sensor. An image sensor may include a readout circuitry which may be formed on and/or over a first substrate. An image sensor may include an interlayer dielectric layer formed on and/or over a first substrate. An image sensor may include a metal line formed on and/or over an interlayer dielectric layer, and may include a top plug. An image sensor may include an image sensing device formed on and/or over a top plug. An image sensor may include a first conductive type ion implantation area formed on and/or over an area of an image sensing device corresponding to a top plug. Methods of manufacturing an image sensor are disclosed.

Abstract: A fuel cell system optimizing the ratio of width of a channel to a width of a rib forming a passage for supplying fuel and air, the ratio of width thereof to a height of a channel, and the number of passages, thereby improving the fuel diffusing performance and reducing a pressure drop therein is provided. The fuel cell system includes at least one stack for generating electrical energy by an electrochemical reaction between hydrogen and oxygen, a fuel supply portion for supplying fuel to the stack, and an oxygen supply portion for supplying oxygen to the stack. The stack is formed into a stacked configuration having a plurality of membrane electrode assemblies separated by separators. The separators have ribs which closely contact the adjacent membrane electrode assemblies and form channels through which the oxygen and hydrogen flow. The ratio of the width of a channel to the height of the same is between about 0.6 and about 0.8.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry formed on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. The image sensor further includes a plurality of uppermost contact plugs arranged in a three-dimensional matrix configuration at an uppermost metal area, each uppermost contact plug extending from an uppermost metal of the at least one metal to an inner portion of the first conductive type conduction layer.

Abstract: Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.

Abstract: A steam generator, used in a helical coil type steam generator for a sodium-cooled fast reactor which has heat transfer tubes of a double-wall tube structure, with high heat transfer efficiency and a heat transfer tube damage detection unit that can detect on-line in real-time whether the heat transfer tube is damaged or not. The heat transfer tube of a steam generator for a sodium-cooled fast reactor, includes an inner tube formed with a first material; an outer tube formed with a second material that is in close contact with the inner tube and which has a thermal expansion coefficient less than that of the first material; and a plurality of helium flow grooves formed between the inner tube and the outer tube along a lengthwise direction of the heat transfer tube for flowing helium gas.

Abstract: Disclosed are an apparatus and a method for display of a screen according to brightness intensity of ambient light. One or more characteristic values configuring display data is set to be higher than a preset color characteristic value when measured brightness intensity of ambient light is higher than preset brightness intensity of ambient light, and one of the set color characteristic values is converted to a contrast characteristic value and is displayed. Therefore, even when brightness intensity of ambient light is high, the user can accurately view a screen.

Abstract: An apparatus and a method for selecting and displaying a particular region in a displayed image. A user selects a target region in an image displayed on an image reproduction apparatus, an image of the selected target region is enlarged and displayed in a window, which the user can adjust a generation position, a size, a zoom magnification, and a resolution thereof. The image reproduction apparatus tracks a target object in the target region, and enables the user to continuously view the target object in the window.

Abstract: Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes.

Abstract: Disclosed is a method of preventing optical recording media from being fractured and apparatus thereof, which enable to prevent an optical disc of an optical disc drive from being fractured due to a crack. The method and apparatus comprise: detecting a first tracking error signal outputted from a data recording/reproducing apparatus when the optical recording media are rotated at a first speed; detecting a second tracking error signal outputted from the data recording/reproducing apparatus when the optical recording media are rotated at a second speed; determining whether or not the crack on the optical disc exists on the basis of the first tracking error signal and the second tracking error signal; and stopping an operation of the data recording/reproducing apparatus when the optical recording media have the crack.

Abstract: Disclosed is a hologram recording method using a beam with a very large incident angle, a hologram reproduction apparatus using a holographic reflector, a hologram reproduction method using the same and a flat display element apparatus using a holographic reflector. The hologram recording method using a beam with a very large incident angle comprises the steps of generating a sheet beam as the reference beam, and introducing the reference beam into the recording medium at an incident angle of at least 70°. The hologram reproduction apparatus using a holographic reflector comprises a light, a holographic reflector, an adjustor, and a hologram.