Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

Abstract: The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.

Abstract: A method of driving a transistor, a driving element using the same, and a display panel and a display apparatus having the driving element are provided. The method for driving a transistor comprises: receiving a bias voltage at a first electrode of a driving transistor; outputting a first signal having a first polarity from a first electrode of a switching transistor to a capacitor and a control electrode of the driving transistor when a select line is activated for driving an organic display element; and outputting a second signal having a second polarity from the first electrode of the switching transistor to the capacitor and the control electrode of the driving transistor when the select line is activated for dissipating a charge in the driving transistor and for deactivating the organic display element.

Abstract: A display device is provided, which includes: light emitting elements; switching transistors transmitting data signals in response to scanning signals; driving transistors, each driving transistor electrically connected to a driving signal line and one of the switching transistors and supplying a current to the light emitting elements in response to an output signal of the one of the switching transistors and the driving signal of the driving signal line; and a first capacitor electrically connected between each driving transistor and each driving signal line; and a second capacitor electrically connected between each light emitting element and each driving transistor, wherein the first and the second capacitors transmit the driving signal by capacitive coupling.

Abstract: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

Abstract: A display device includes a first switching transistor, a first driving transistor connected to the first switching transistor, a second switching transistor including an input terminal connected to an output terminal of the first switching transistor, a second driving transistor connected to the second switching transistor, and a pixel unit comprising a sub-pixel electrode connected to the first driving transistor and a main pixel electrode separated from the sub-pixel electrode and connected to the second driving transistor.

Abstract: The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.

Abstract: A method of driving a transistor, a driving element using the same, and a display panel and a display apparatus having the driving element are provided. The method for driving a transistor comprises: receiving a bias voltage at a first electrode of a driving transistor; outputting a first signal having a first polarity from a first electrode of a switching transistor to a capacitor and a control electrode of the driving transistor when a select line is activated for driving an organic display element; and outputting a second signal having a second polarity from the first electrode of the switching transistor to the capacitor and the control electrode of the driving transistor when the select line is activated for dissipating a charge in the driving transistor and for deactivating the organic display element.

Abstract: A display device that lends itself to easy repair of a defective pixel is presented. The device includes: a thin film transistor formed having a first electrode and a second electrode, the second electrode having a first part facing the first electrode, a second part that protrudes from the first part and having a first width, and a third part that extends from the second part and having a second width which is different from the first width. The device also includes a wall encompassing the pixel electrode and a common electrode formed on the wall. In one version of the repairing process, the second part of the second electrode is coupled to the common electrode. This coupling causes electric current from the second electrode to flow to the common electrode instead of to a light emitting diode, thereby converting a white spot to a black spot.

Abstract: An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.

Abstract: The present invention relates to an OLED display and a manufacturing method thereof, including a substrate, a control electrode formed on the substrate, a polysilicon semiconductor formed on the control electrode, a data line including an input electrode at least partially overlapping the polysilicon semiconductor and an output electrode facing the input electrode, an insulating layer covering the data line and the output electrode and having a contact hole, a gate line connected to the control electrode through the contact hole, and a pixel electrode connected to the output electrode.

Abstract: Disclosed are a method of driving a display panel and a display apparatus using the same, in which a driving voltage is applied to a transistor provided in each pixel of the display to drive the transistor. A voltage level of the driving voltage applied to the transistor is adjusted every predetermined period and the changed driving voltage is applied to the transistor to prevent the operational reliability of the transistor from being lowered by a shift in the threshold voltage of the transistor.

Abstract: A driving circuit for an organic light emitting display apparatus includes first and second switching elements and a driving element. The first switching element is controlled by a scan signal supplied from a scan line. The second switching element is controlled by the scan signal. The driving element provides an end of an organic electroluminescent element with a first reference voltage via the second switching element. The driving element has amorphous silicon thin film transistors so that the manufacturing cost of the organic light emitting display apparatus may be reduced.

Abstract: The present invention relates to a thin film transistor and a manufacturing method thereof. A thin film transistor according to an exemplary embodiment of the present invention includes: a first electrode arranged on a substrate; a second electrode arranged on the substrate and separated from the first electrode; a first ohmic contact arranged on an upper surface of the first electrode; a second ohmic contact arranged on an upper surface of the second electrode; a first buffer member covering a lateral surface of the first electrode and the second electrode; a semiconductor member contacted with an upper surface of the first buffer member, and the first ohmic contact and the second ohmic contact; an insulating layer arranged on the semiconductor member; and a third electrode arranged on the insulating layer, and disposed on the semiconductor member.

Abstract: A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.

Abstract: In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern.

Abstract: An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.

Abstract: A display substrate comprises a substrate; a source electrode arranged on the substrate; a drain electrode arranged on the substrate and spaced from the source electrode; a semiconductor layer arranged on the source electrode and the drain electrode; an insulating layer arranged on the semiconductor layer; and a gate electrode arranged on the insulating layer, wherein the semiconductor layer comprises: a first ohmic contact region that overlays an upper surface and a side surface of the source electrode; a second ohmic contact region that overlays an upper surface and a side surface of the drain electrode; and a channel region that is spaced from the source and drain electrodes and interconnects the first ohmic contact region and the second ohmic contact region.

Abstract: A display device according to the present invention comprises an insulating substrate; a switching thin film transistor formed on the insulating substrate for receiving a data voltage has a first semiconductor layer comprising amorphous silicon; a driving thin film transistor formed on the insulating substrate, having a control terminal connected with an output terminal of the switching thin film transistor and includes a second semiconductor layer comprising poly silicon; a light sensor formed on the insulating substrate and comprises a third semiconductor layer and a sensor input terminal and a sensor output terminal electrically connected with the third semiconductor layer; an insulating layer formed on the light sensor; a first electrode formed on the insulating layer and electrically connected with an output terminal of the driving thin film transistor; an organic layer formed on the first electrode and comprises a light emitting layer; a second electrode formed on the organic layer; and a controller whi

Abstract: A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.