Abstract: A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conduction type, a source region (13) of the first conduction type, a drift region (16) and a channel region (14) of a second conduction type which is opposite to the first conduction type. The drift region (16) comprises at least two stripes (15, 32) of the first conduction type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).

Abstract: A high voltage NMOS transistor is disclosed where the p-doped body is isolated against the p-doped substrate by a DN well having a pinch-off region where the depth of the DN-well is at minimum. By the forming space charge region at raising drain potentials a shielding of the drain potential results because the space charge region touches the field oxide between source and drain at the pinch-off region. An operation at the high side at enhanced voltage levels is possible.

Abstract: A low cost integration method for a plurality of deep isolation trenches on the same chip is provided. The trenches have an additional n-type or p-type doped region surrounding the trench—silicon interface. Providing such variations of doping the trench interface is achieved by using implantation masking layers or doped glass films structured by a simple resist mask. By simple layout variation of the top dimension of the trench various trench depths at the same time can be ensured. Using this method, wider trenches will be deeper and smaller trenches will be shallower.

Abstract: Disclosed is an apparatus which has the capability of cleaning a waste or used filter assembly with a broad spectrum of chemical agents in an automated fashion. The cleaning apparatus comprises a cleaner vessel for accommodating the filter assembly to carry out triethylene glycol cleaning, sodium hydroxide cleaning, nitric acid cleaning and water washing in a predetermined cleaning sequence. First to fourth reservoirs communicate with the cleaner vessel through their corresponding pipelines to feed such chemical detergent liquids as triethylene glycol solution, sodium hydroxide solution, nitric acid solution and pure water into the vessel. The detergent liquids will circulate within the cleaning vessel by means of a stream generator, whereby the filter assembly can be cleaned to a higher degree of detergency.