Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains. The grain boundary includes a secondary phase including Sn, a rare-earth element, and a first subcomponent. The rare-earth element includes at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd and Yb. The first subcomponent includes at least one of Si, Mg, and Al.

Abstract: A method for manufacturing a semiconductor device is provided.

Abstract: Disclosed is an air supply device including an intake module configured to introduce air from the outside, a compression module configured to receive the air discharged from the intake module and compress the air, a cooling module configured to cool the air compressed by and discharged from the compression module, and a control module configured to control an operation of the compression module, in which a part of the air in the intake module cools the control module by exchanging heat with the control module.

Abstract: A connector system includes a first connector configured to be electrically connected to a predetermined device required for air discharge and to introduce air discharged from the predetermined device into the first connector, a first connection line surrounding a first cable electrically connected to the first connector, one side of the first connection line being connected to the first connector, and a second connector connected to an opposite side of the first connection line and electrically connected to the first cable, wherein the first connector, the first connection line, and the second connector are configured to communicate with each other such that the air introduced into the first connector is discharged through the second connector after passing through the first connection line.

Abstract: An air foil bearing and a compressor including the same, may include a beam plate provided in a lower portion thereof; a shim sheet stacked on the beam plate, and partially covering a top surface of the beam plate; and a top foil stacked on the shim sheet, wherein one side of the beam plate is fixed, and the other side of the beam plate is movable in a vertical direction thereof.

Abstract: A method for manufacturing a semiconductor device is provided.

Abstract: An amplifying circuit is provided. The amplifying circuit includes a bias circuit receiving an operating voltage from a power supply circuit and generating a first bias voltage, a resistance circuit connected between the bias circuit and a gate node and transferring the first bias voltage to the gate node, a start-up circuit generating a high-level start-up voltage and supplying the start-up voltage to the gate node before the operating voltage is supplied, based on a control signal, and an amplifier started-up by receiving the start-up voltage and then receiving the operating voltage and the first bias voltage to amplify a high frequency signal input through the gate node.

Abstract: A motor for an air compressor is provided. The motor includes a stator including a first coil to generate a magnetic flux for driving the motor and a second coil positioned in a space the same as a space for the first coil to increase an inductance, and a rotator to mutually interact with the stator to rotate.

Abstract: An air foil bearing and a compressor including the same, may include a beam plate provided in a lower portion thereof; a shim sheet stacked on the beam plate, and partially covering a top surface of the beam plate; and a top foil stacked on the shim sheet, wherein one side of the beam plate is fixed, and the other side of the beam plate is movable in a vertical direction thereof.

Abstract: A connector system includes a first connector configured to be electrically connected to a predetermined device required for air discharge and to introduce air discharged from the predetermined device into the first connector, a first connection line surrounding a first cable electrically connected to the first connector, one side of the first connection line being connected to the first connector, and a second connector connected to an opposite side of the first connection line and electrically connected to the first cable, wherein the first connector, the first connection line, and the second connector are configured to communicate with each other such that the air introduced into the first connector is discharged through the second connector after passing through the first connection line.

Abstract: An amplifying circuit is provided. The amplifying circuit includes a bias circuit receiving an operating voltage from a power supply circuit and generating a first bias voltage, a resistance circuit connected between the bias circuit and a gate node and transferring the first bias voltage to the gate node, a start-up circuit generating a high-level start-up voltage and supplying the start-up voltage to the gate node before the operating voltage is supplied, based on a control signal, and an amplifier started-up by receiving the start-up voltage and then receiving the operating voltage and the first bias voltage to amplify a high frequency signal input through the gate node.

Abstract: A radio-frequency switching circuit includes a first switching circuit connected between a common capacitor connected to an antenna port and a first capacitor connected to a first port, and performing a switching operation with a first gate voltage transmitted through a first gate terminal, a voltage generation circuit supplying a drain-source voltage to a common node disposed at a first end of the first switching circuit, and a voltage detection circuit receiving a node voltage from the common node, comparing the node voltage with a reference voltage, and generating a detection voltage including damage information regarding the common capacitor or the first capacitor.

Abstract: A radio-frequency switching circuit includes a first switching circuit connected between a common capacitor connected to an antenna port and a first capacitor connected to a first port, and performing a switching operation with a first gate voltage transmitted through a first gate terminal, a voltage generation circuit supplying a drain-source voltage to a common node disposed at a first end of the first switching circuit, and a voltage detection circuit receiving a node voltage from the common node, comparing the node voltage with a reference voltage, and generating a detection voltage including damage information regarding the common capacitor or the first capacitor.

Abstract: A motor for an air compressor is provided. The motor includes a stator including a first coil to generate a magnetic flux for driving the motor and a second coil positioned in a space the same as a space for the first coil to increase an inductance, and a rotator to mutually interact with the stator to rotate.

Abstract: A complementary metal oxide semiconductor (CMOS) device includes a high-resistivity substrate; a first CMOS structure disposed in a first region of the high-resistivity substrate; and a second CMOS structure of a same semiconductor type as the first CMOS structure and disposed in a second region of the high-resistivity substrate spaced apart from the first region. The high-resistivity substrate is disposed between the first CMOS structure and the second CMOS structure to separate the first CMOS structure from the second CMOS structure.

Abstract: An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.

Abstract: A bias circuit includes a bias current circuit varying a resistance value according to a mode voltage determined according to a magnitude of an input radio frequency signal, and generating a bias current that is controlled according to the variation of the resistance value; a bias voltage circuit generating a bias voltage that is adjusted according to a change in a power source voltage and supplying the bias voltage to an amplifying circuit; and a bias transfer circuit supplying the bias current to a base node of the amplifying circuit and blocking an input of the radio frequency signal from the base node.

Abstract: A bias circuit includes a bias current circuit varying a resistance value according to a mode voltage determined according to a magnitude of an input radio frequency signal, and generating a bias current that is controlled according to the variation of the resistance value; a bias voltage circuit generating a bias voltage that is adjusted according to a change in a power source voltage and supplying the bias voltage to an amplifying circuit; and a bias transfer circuit supplying the bias current to a base node of the amplifying circuit and blocking an input of the radio frequency signal from the base node.

Abstract: A complementary metal oxide semiconductor (CMOS) device includes a high-resistivity substrate; a first CMOS structure disposed in a first region of the high-resistivity substrate; and a second CMOS structure of a same semiconductor type as the first CMOS structure and disposed in a second region of the high-resistivity substrate spaced apart from the first region. The high-resistivity substrate is disposed between the first CMOS structure and the second CMOS structure to separate the first CMOS structure from the second CMOS structure.

Abstract: An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.