Abstract: The present invention provides a system for collecting tripper room fugitive dust of a power plant coal transfer facility, wherein the system includes an entrance dust collection module disposed at the entrance of a tripper room to block dust; a tripper car configured to move along a transfer conveyor disposed inside the tripper room and transfer fuel introduced through the entrance to silos; and a main dust collection module configured prevent spread of dust by removing dust in response to movement of the tripper car and adjusting the pressure at the point where dust is generated.

Abstract: According to an embodiment, a multi-cooling type cold trap according to the present disclosure includes a main body unit in which an inflow space having a material to be condensed flown therein is formed, a circulation unit which is disposed in the inflow space of the main body unit and circulates cooling water for condensing the material to be condensed, and a supply unit which supplies the cooling water to the circulation unit after lowering temperature of the cooling water in stages.

Abstract: The present invention relates to an apparatus and method for generating a bidirectional chirp signal by using a phase accumulation polynomial, and the apparatus for generating a bidirectional chirp signal according to an embodiment may include an extraction unit extracting time interval information from the output of a frequency accumulator, a polynomial handling unit applying the phase accumulation polynomial to the extracted time interval information to generate a polynomial output value, and a bidirectional chirp signal output unit outputting a bidirectional chirp signal on the basis of the generated polynomial output value.

Abstract: The present invention relates to an apparatus and method for generating a bidirectional chirp signal by using a phase accumulation polynomial, and the apparatus for generating a bidirectional chirp signal according to an embodiment may include an extraction unit extracting time interval information from the output of a frequency accumulator, a polynomial handling unit applying the phase accumulation polynomial to the extracted time interval information to generate a polynomial output value, and a bidirectional chirp signal output unit outputting a bidirectional chirp signal on the basis of the generated polynomial output value.

Abstract: Provided are a polyurethane resin composition for a hollow fiber membrane potting agent, and a hollow fiber membrane module, and more particularly, a polyurethane resin composition for a hollow fiber membrane potting agent, which includes a polyurethane resin and a hydrophilic additive to have excellent resistance to internal/external pressure, and also to have excellent sealing performance, antifouling property, etc., and a hollow fiber membrane module including a cured product thereof.

Abstract: The present invention relates to an air diffuser including an air diffusing pipe in which at least two pore groups including two or more pores are formed, and a membrane bioreactor including the same.

Abstract: A siloxane based coating composition having excellent dyeability, abrasion resistance, glossiness and transparency, a preparation method thereof, and an optical lens coated by the coating composition are suggested. The siloxane based coating composition includes organo silane compound, inorganic oxide (H-index filler), solvent and a dyeing improving material. The dyeing improving material adopts nitric acid, hydrochloric acid, phosphoric acid, sodium nitrate, potassium nitrate, silver nitrate, or the like. The siloxane based coating composition shows excellent dyeability owing to the dyeing improving material, excellent abrasion resistance owing to the organo silane compound, and excellent glossiness and transparency, so it may be applied as a coating film on a surface of a plastic lens such as optical lens, industrial safety lens and leisure-purpose goggle that require high transparency.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M?Oy) or amorphous metal oxynitride (M?OyNz).

Abstract: A gate structure includes a gate insulation layer pattern, a gate electrode, a first spacer and a protecting layer pattern. The gate insulation layer pattern is on a substrate. The gate electrode is on the gate insulation layer pattern, the gate electrode including a lower portion having a first width, a central portion having a second width smaller than the first width and an upper portion having a third width. The first spacer is on a lower sidewall of the gate electrode. The protecting layer pattern is on a central sidewall of the gate electrode.

Abstract: A method of making a semiconductor device is disclosed. A mask if formed over a first and a second region of a semiconductor body, and a vertical diffusion barrier is formed in a region between the first and second regions. A mask is then formed over the second region and the first region is left unmasked. The semiconductor body is exposed to a dopant, so that the first region is doped and the second region is blocked from the dopant by the mask and by the vertical diffusion barrier.

Abstract: A siloxane based coating composition having excellent dyeability, abrasion resistance, glossiness and transparency, a preparation method thereof, and an optical lens coated by the coating composition are suggested. The siloxane based coating composition includes organo silane compound, inorganic oxide (H-index filler), solvent and a dyeing improving material. The dyeing improving material adopts nitric acid, hydrochloric acid, phosphoric acid, sodium nitrate, potassium nitrate, silver nitrate, or the like. The siloxane based coating composition shows excellent dyeability owing to the dyeing improving material, excellent abrasion resistance owing to the organo silane compound, and excellent glossiness and transparency, so it may be applied as a coating film on a surface of a plastic lens such as optical lens, industrial safety lens and leisure-purpose goggle that require high transparency.

Abstract: There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M'Oy) or amorphous metal oxynitride (M'OyNz).

Abstract: A gate structure includes a gate insulation layer pattern, a gate electrode, a first spacer and a protecting layer pattern. The gate insulation layer pattern is on a substrate. The gate electrode is on the gate insulation layer pattern, the gate electrode including a lower portion having a first width, a central portion having a second width smaller than the first width and an upper portion having a third width. The first spacer is on a lower sidewall of the gate electrode. The protecting layer pattern is on a central sidewall of the gate electrode.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M?Oy) or amorphous metal oxynitride (M?OyNz).

Abstract: A method of making a semiconductor device is disclosed. A mask if formed over a first and a second region of a semiconductor body, and a vertical diffusion barrier is formed in a region between the first and second regions. A mask is then formed over the second region and the first region is left unmasked. The semiconductor body is exposed to a dopant, so that the first region is doped and the second region is blocked from the dopant by the mask and by the vertical diffusion barrier.

Abstract: Methods of forming a field effect transistor by forming a gate electrode on a semiconductor substrate and forming aluminum oxide spacers on sidewalls of the gate electrode. Source and drain region dopants of first conductivity type are implanted into the semiconductor substrate using the aluminum oxide spacers as an implant mask. Thereafter, the aluminum oxide spacers are selectively removed by exposing them to tetramethyl ammonium hydroxide (TMAH). The step of selectively removing the aluminum oxide spacers may include exposing the aluminum oxide spacers to tetramethyl ammonium hydroxide having a temperature of about 80° C.

Abstract: The present invention relates to a silicone-based coating composition with middle and high refractive index, a method of preparing the same, and an optical lens prepared therefrom, and more specifically to a silicone-based coating composition including organosilanes, inorganic oxides having a refractive index of from 1.7 to 3.0, an aluminum acetyl acetone, a C1-C5 alkyl cellosolve, and a solvent, a method of preparing the same, and an optical lens prepared therefrom. The siloxane-based coating composition is transparent, not sticky, and stable for long time storage. Therefore, the coating composition can be applied to a coating layer on a surface of a plastic lens such as an optical lens, an industrial safety lens, or goggles for leisure.

Abstract: The present invention relates to a silicone-based coating composition improved adhesion and dyeability, and more specifically, to a silicone-based coating composition prepared by adding a compound(s) having at least one functional group selected from the group consisting of amino, carboxylic acid, mercapto, methylol, anhydride, and isocyanate into an organic-inorganic sol prepared by a sol-gel reaction of organosilanes at high temperature, a method of preparing the same, and an optical lens prepared therefrom. The dyeability of the coating composition is improved by conducting sol-gel reaction at high temperature, and the adhesion to the substrate is improved by adding the compound capable of hydrogen bond and condensation reaction. Therefore, the coating layer of the present invention is proper to be applied to a coating layer for a plastic lens such as glasses, an industrial glass, or goggles for leisure because of good dyeability and adhesion to substrate.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.