Abstract: A semiconductor device includes a substrate, first and second active patterns extending in a first horizontal direction on the substrate, first and second gate electrodes extending in a second horizontal direction on the first and second active patterns, respectively, a first trench extending in the second horizontal direction between the first and second gate electrodes and separating the first and second active patterns, at least part of the first trench is in the substrate, an active cut extending along sidewalls and a bottom surface of the first trench and contacting each of the first and second active patterns, a second trench on the active cut in the first trench, and a flowable material layer in at least part of the second trench, the flowable material layer including a flowable insulating material and not being in contact with each of the substrate and the first and second active patterns.

Abstract: A semiconductor device comprising: a lower insulating layer; a field insulating layer on the lower insulating layer; an upper insulating layer on the field insulating layer; a first through via in the upper insulating layer; a second through via in the field insulating layer; and a third through via in the lower insulating layer, wherein the second through via is connected to the first and third through vias, and wherein a width of a top surface of the second through via is greater than a width of a bottom surface of the first through via, a width of a bottom surface of the second through via is greater than a width of a top surface of the third through via, and a width of a middle portion of the second through via is greater than the widths of the top surface and the bottom surface of the second through via.

Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: A vehicle cooling/heating system includes a coolant line in which coolant is circulated between a heat source component of a vehicle that provides waste heat and a chiller and a refrigerant line in which refrigerant is circulated through a compressor, a condenser, an expansion valve, and an evaporator. The refrigerant line performs indoor cooling through the evaporator. A controller controls the coolant line such that, during a drying mode in which it is necessary to dry the evaporator, the coolant in the coolant line is circulated or not circulated through the heat source component and the chiller, and such that the refrigerant in the refrigerant line flows, in order, through the compressor, the evaporator, and the chiller.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: The present invention relates to a cooling module for a vehicle, and more particularly, to a cooling module for a vehicle including a condenser, a first radiator through which coolant for an engine flow, a second radiator through which coolant for electrical components flows, and an intercooler, and capable of evenly distributing air resistance of the front surface of the first radiator to secure an overall balance of an air volume distribution by disposing the condenser, the second radiator, and the first radiator in a flow direction of air or disposing the second radiator, the condenser, and the first radiator in this order, and disposing the intercooler on lower sides of the condenser and the second radiator, and capable of minimizing a gap of each heat exchange period by disposing the condenser C and the first radiator R to be in closely contact with the second radiator L.

Abstract: A display apparatus includes a display panel, a driving controller, and a data driver. The driving controller generates a data signal based on input image data. The data driver converts the data signal into a data voltage and outputs the data voltage to the display panel. The driving controller includes a deterioration compensator. The deterioration compensator generates an alpha value based on a ratio between a sensed current read from a portion of the display panel applied with a high power voltage or a portion of the display panel applied with a low power voltage and a predicted current calculated from the input image data and generates the data signal using the input image data, a stress value of a pixel, and the alpha value.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A method of manufacturing a multilayer metal plate by electroplating includes a first forming operation of forming one of a first metal layer and a second metal layer on a substrate by electroplating, wherein the second metal layer is less recrystallized than the first metal layer, the second metal layer is comprised of nanometer-size grains, and the second metal layer has a higher level of tensile strength than the first metal layer; and a second forming operation of forming, by electroplating, a third metal layer not formed in the first forming operation on a surface of one of the first metal layer and the second metal layer formed in the first forming operation.

Abstract: Charging system and method using a motor driving system are proposed. The charging system includes a battery, an inverter to which D.C. power stored in the battery is applied, including a plurality of legs each including two switching elements, a motor including a plurality of coils of which first ends are respectively connected to connection nodes of the switching elements of each of the plurality of legs, and second ends are connected to each other to form a neutral point, and an inverter driving part configured to control switching of the switching elements, so that switching speeds of the switching elements are different for each mode of a motor driving mode and a charging mode so as to change magnitude of charging voltage supplied to the neutral point of the motor and to output the charging voltage to the battery.

Abstract: An electrically conductive bonding tape includes a conductive first film between, and bonded to, conductive first and second adhesive layers. The first film and the first and second adhesive layers are conductive at least along a thickness direction of the bonding tape. Each of the first and second adhesive layers includes conductive particles dispersed substantially as a single layer in a substantially insulative adhesive material. The plurality of conductive particles in each of the first and second adhesive layers has an average particle size Pav and a standard of deviation Psd, such that Psd/Pav is less than about 0.2. Each of the first and second adhesive layers has an average thickness of no more than about 15% greater than the average particle size of the particles in the adhesive layer. An average surface roughness of opposing major first and second surfaces of the first film is less than 10 microns.

Abstract: Disclosed is an apparatus for dynamic thermal management, which includes a thermal management unit that determines whether there is a need to perform thermal management on a processor based on temperatures measured from a plurality of temperature sensors included in the processor and generates an indication signal, and a controller that performs the thermal management on the processor in response to the indication signal, by using a first method of adjusting a state of each of a plurality of cores included in the processor, a second method of adjusting a level of an operating voltage and a frequency of a clock signal, which are provided to the processor, and/or a third method for adjusting only the frequency of the clock signal to be provided to the processor, and where each of the plurality of cores is in a wake-up state or an idle state.

Abstract: An electrocardiogram (ECG) measurement device for a vehicle is provided. The ECG measurement device includes an impedance compensator that corresponds to an electrode in contact with a body of a driver and configured to compensate an impedance of each of electrode signals received from the electrode. An electrode selector sequentially selects the electrode signals in response to receiving the electrode signals from the electrode. A differential amplifier differentially amplifies the electrode signals. In particular, each electrode signal has the compensated impedance. Additionally, a signal quality evaluator evaluates quality of an ECG signal output from the differential amplifier and a compensation controller then adjusts an impedance compensation value of each of the impedance compensators as a result of evaluating the quality of the ECG signal.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: A method for manufacturing a display device includes checking a particle positioned between a display panel and a connecting member, irradiating a laser to an upper surface of the connecting member overlapping at least a part of the particle, removing the connecting member overlapping a region to which the laser is irradiated, removing the particle overlapping a region to which the laser is irradiated, and disposing a desiccant in a hole formed by removing the connecting member and the particle.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.

Abstract: Disclosed is an oral pharmaceutical composition for preventing or treating dry eye syndrome, which comprises rebamipide or a prodrug thereof, or a pharmaceutically acceptable salt thereof, as an active ingredient. The compounds can treat dry eye syndrome via oral route, and can be thus employed safely and conveniently compared to conventional eye drops.