Abstract: The present invention relates to an analyzing method of measuring the changes of glycosylation in various glycoproteins which participate in tumorigenesis and metastasis.

Abstract: A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.

Abstract: The present invention relates to a method of preparing a heteropoly acid catalyst used for the production of methacrylic acid by gas phase oxidation of methacrolein, more precisely a method of preparing a heteropoly acid catalyst comprising the steps of preparing a slurry by adding metal precursors and ammonium salt to protonic acid Keggin-type heteropoly acid aqueous solution and stirring thereof; and drying, molding and firing the slurry to give a catalyst. The present invention provides a method of preparing a heteropoly acid catalyst exhibiting high methacrolein conversion rate and methacrylic acid selectivity without pre-firing process by using high purity protonic acid Keggin-type heteropoly acid and ammonium salt.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device comprises a gate electrode on a semiconductor substrate having a device isolation region, a first drain spacer on one side of the gate electrode, a second drain spacer next to the first drain spacer, a first source spacer on an opposite side of the gate electrode and a portion of the semiconductor substrate where a source region is to be formed, a second source spacer on side and top surfaces of the first source spacer, and LDDs adjacent to the first drain spacer and below the first source spacers, wherein the LDD below the first source spacer is thinner than the LDD adjacent to the first drain spacer.

Abstract: A method for manufacturing a semiconductor device includes can prevent defects of a semiconductor device due to the deterioration of electro migration (EM)/stress migration (SM) properties of the device as a result of metal corrosion and void generation in burying a novolac material. Embodiments can also prevent the generation of fencing in a metal wire structure.

Abstract: The present invention relates to a method for diagnosing cancers by measuring proteins associated with tumorigenesis and metastasis, and a diagnostic kit using the same, particularly relates to the method for diagnosing cancers by measuring the changes of glycosylation of proteins and the kit for diagnosis of cancers using the said method. The method and kit of the present invention can effectively be used for the sensitive diagnosis of cancers comprising colon cancer, stomach cancer, lung cancer and liver cancer.

Abstract: Phase-locked loop (PLL) integrated circuits according to embodiments of the invention provide dual feedback control. The first feedback control utilizes a conventional phase locking scheme that passes a feedback clock signal to an input of a phase-frequency detector (PFD). The second feedback control utilizes an automatic frequency calibrator that evaluates a frequency of an output of a voltage-controlled oscillator (VCO) relative to a locked frequency detected during calibration and provides separate calibration control to a charge pump.

Abstract: Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes an isolation area formed on a semiconductor substrate to define NMOS and PMOS areas, a gate insulating layer and a gate formed on each of the NMOS and PMOS areas, a primary gate spacer formed at sides of the gate, LDD areas formed in the semiconductor substrate at sides of the gate, a secondary gate spacer formed at sides of the primary gate spacer, source and drain areas formed in the semiconductor substrate at sides of the gate of the PMOS area; and source and drain areas formed in the semiconductor substrate at sides of the gate of the NMOS area, wherein the source and drain areas of the NMOS area are deeper than the source and drain areas of the PMOS area.

Abstract: A digitally controlled oscillator includes a ring oscillator, a parallel resistor bank connected to a first terminal of the ring oscillator and having a resistance that varies according to a digital code, and a serial resistor bank connected to a second terminal of the ring oscillator and having a resistance that varies according to the digital code. A frequency of the ring oscillator linearly varies with a variation in the resistance of the parallel resistor bank and the resistance of the serial resistor bank according to the digital code.

Abstract: The present invention provides a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included); a method for producing (meth)acrylic acid from at least one reactant selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, in which a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included) is used as a catalyst; and a reactor used for producing (meth)acrylic acid from at least one reactant selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, in which a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included) is used as a catalyst. Further, the present invention provides a method for producing the (meth)acrylic acid without any additional process of converting (meth)acrolein into (meth)acrylic acid.

Abstract: The present invention provides a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included); a method for producing (meth)acrylic acid from at least one reactant selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, in which a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included) is used as a catalyst; and a reactor used for producing (meth)acrylic acid from at least one reactant selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, in which a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included) is used as a catalyst. Further, the present invention provides a method for producing the (meth)acrylic acid without any additional process of converting (meth)acrolein into (meth)acrylic acid.

Abstract: A voltage-controlled oscillator includes a voltage regulator, and a delay unit. The voltage regulator independently receives a first oscillation control signal and a second oscillation control signal to provide a regulated voltage signal which is represented by a regular ratio of combination of the first and second oscillation control signals, and the regulated voltage signal is feedback to the voltage regulator. The delay unit generates an output signal having a frequency varying in response to the regulated voltage signal.

Abstract: A semiconductor device having pads is provided. The semiconductor device includes first pads formed along a first row, and second pads formed along a second row. The first via contact portions extending from the first pads toward the second row, and second via contact portions extending from the second pads toward the first row. The first and second via contact portions are arranged along a third row between the first and second rows.

Abstract: A transceiver comprises a transmitter that converts a plurality of data components into serial data in response to a first clock signal and transmits the serial data, and a receiver that receives the serial data and converts the serial data into the plurality of data components in response to a second clock signal generated from the serial data. The transmitter adds at least one dummy bit to the serial data at predetermined intervals. The at least one dummy bit includes information regarding a data type of the plurality of data components.

Abstract: An array substrate for a liquid crystal display (LCD) device includes a substrate having a display region and a non-display region at periphery portions of the display region, the non-display region including first, second, third and fourth regions; a plurality of gate lines parallel to the second and fourth regions, the plurality of gate lines including a first gate line closest to the second region and a second gate line closest to the fourth region; a plurality of data lines parallel to the first and third regions and crossing the plurality of gate lines to define a plurality of pixel regions in the display region, the plurality of data lines including a first data line closest to the first region; and a light-shielding portion corresponding to the non-display region and disposed at the same layer as at least one of the gate line and the data line, the light-shielding portion including first, second, third and fourth portions corresponding to the first, second, third and fourth regions, respectively.

Abstract: Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a gate structure which includes a silicon oxynitride (SiON) layer formed on a semiconductor substrate, a hafnium silicon oxynitride (HfSiON) layer formed on the silicon oxynitride (SiON) layer, a polysilicon layer formed on the hafnium silicon oxynitride (HfSiON) layer, and a silicide layer formed on the polysilicon layer, spacers at sidewalls of the gate structure, and source and drain regions at opposite sides of the gate structure.

Abstract: A liquid crystal display comprises a matrix pattern formed in a double layer comprising a lower pattern having a hydrophilic property on a substrate, and a black matrix having a hydrophobic property on the lower pattern; and color filters formed in the pixel area.

Abstract: A liquid crystal display (LCD) device and its fabrication method are disclosed. Specifically, a fabrication method in which polyhedral spacers are implemented on a substrate through an ink jet method are used for an LCD device. The spacers have the polyhedral shape to increase their contact area with two substrates, and include a surface processed layer for strengthening a bonding force in its bonding with an alignment film formed on the two substrates. The spacers have a polyhedral shape for maintaining the cell gap between the substrates.

Abstract: A high throughput apparatus for multiple sample analysis is disclosed. The high throughput apparatus for multiple sample analysis may include: a laser light source; a lens array configured to focus laser irradiated by the laser light source into a plurality of focused laser beams; and a focusing unit disposed between the lens array and a sample, the focusing unit configured to focus ions produced from the sample by the plurality of focused laser beams into a plurality of ion beams. A high throughput method for multiple sample analysis may include: producing a plurality of focused laser beams by focusing laser; ionizing a sample by irradiating the plurality of focused laser beams to the sample; and producing a plurality of ion beams by focusing ions, wherein the ions are produced from the sample by the plurality of focused laser beams.

Abstract: The present invention provides a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included); a method for producing (meth)acrylic acid from at least one reactant selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, in which a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included) is used as a catalyst; and a reactor used for producing (meth)acrylic acid from at least one reactant selected from the group consisting of propylene, propane, isobutylene, t-butyl alcohol and methyl-t-butyl ether, in which a Mo—Bi—Nb based composite metal oxide (with the proviso that Te is not included) is used as a catalyst.