Abstract: The present invention provides a laser welding method for steel sheets. The laser welding method includes irradiating a low heat input laser beam to a weld zone with a uniform welding pattern of a zigzag shape, with a constant pitch, and with a constant welding speed, so that autogenous welding may be achieved without a feed wire, such that cost of material may be reduced and joinability and performance may be improved.

Abstract: An internal voltage generating circuit includes a first voltage application unit, a second voltage application unit, a first regulator, a second regulator, and a controller. The first and second voltage application units respectively provide a first voltage and a second voltage. The controller generates a bulk voltage, a first control signal, and a second control signal from the first and second voltages. The first regulator is enabled or disabled according to the first control signal and generates and outputs the first internal voltage based on the bulk voltage, the first voltage, and a first reference voltage. The second regulator is enabled or disabled according to the second control signal and generates and outputs the second internal voltage based on the bulk voltage, the second voltage, and a second reference voltage.

Abstract: A voltage adjusting circuit is provided includes an inducing circuit configured to induce a voltage from electromagnetic waves, a first rectifying circuit configured to rectify an output voltage of the inducing circuit, a control circuit configured to control an output voltage of the first rectifying circuit in response to the output voltage of the first rectifying circuit, and a second rectifying circuit configured to simultaneously rectify and regulate the output voltage of the inducing circuit in response to the output voltage of the first rectifying circuit.

Abstract: A voltage adjusting circuit includes an inducing circuit configured to induce a voltage from electromagnetic waves, a first rectifying circuit configured to rectify an output signal of the inducing circuit, a second rectifying circuit configured to rectify the output signal of the inducing circuit, a first regulator configured to regulate an output signal of the first rectifying circuit, and a second regulator configured to regulate an output signal of the second rectifying circuit.

Abstract: A Radio Frequency (RF) transmission method of a Radio Frequency Identification (RFID) reader using a plurality of channels is provided. The method includes: selecting at least part of the plurality of channels, measuring an RF power of each of the selected channels, determining a transmission environment of the RF according to a measurement determination, and modulating an RF signal according to the determined transmission environment.

Abstract: A phase-shift keying (PSK) demodulator and a smart card including the same are disclosed. The PSK demodulator includes a delay circuit and a sampling circuit. The delay circuit generates a plurality of clock signals by delaying the input signal. The sampling circuit samples the input signal in response to the clock signals, and generates output data.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: A semiconductor device, a semiconductor module, an electronic apparatus and methods of fabricating and manufacturing the same are provided. The semiconductor device includes a lower interconnection formed on a substrate, a plurality of control patterns formed on the lower interconnection, a plurality of lower contact plug patterns formed on the control patterns, a plurality of storage patterns formed on the lower contact plug patterns, a plurality of upper electrodes formed on the storage patterns, and a plurality of upper interconnections formed on the upper electrodes. The lower contact plug patterns each include at least two contact holes having different sizes, a plurality of sidewall patterns formed on inner sidewalls of the two contact holes and wherein the sidewall patterns have different thicknesses from one another.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: A semiconductor device includes a semiconductor substrate and a lower interlayer insulating layer disposed on the substrate. An opening passing through the lower interlayer insulating layer and exposing the substrate is included. A buried insulating pattern is disposed in the opening. First and second conductive layer patterns are sequentially stacked to surround the sidewall and bottom of the buried insulating pattern. A phase change material pattern is included, which is disposed on the lower interlayer insulating layer in contact with a top surface of the second conductive layer pattern, and spaced apart from the first conductive layer pattern. An upper interlayer insulating layer covering the lower interlayer insulating layer and the phase change material pattern is included. A conductive plug is included, which passes through the upper interlayer insulating layer and is electrically connected to the phase change material pattern. A method of fabricating the semiconductor device is also provided.

Abstract: An oscillator tuning system and an oscillator tuning method are provided. The system includes a determination unit which determines whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and a frequency tuner which tunes a driving frequency of the RFID oscillator according to a result of the determination. The method includes determining whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and tuning a driving frequency of the RFID oscillator according to a result of the determination.

Abstract: Provided are a Radio Frequency IDentification (RFID) tag with a signal reception method. The RFID tag includes a demodulator that receives a read signal containing read data. The demodulator includes; a voltage generating circuit that provides a first voltage signal and a second voltage signal derived from the received read signal, an inverter that provides a data pulse signal indicative of the read data by inverting the second voltage signal using an inverting voltage defined in relation to the first voltage signal, and a buffer that recovers the read data by buffering the data pulse signal.

Abstract: In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first electrode. A spacer partially covering the first electrode is formed. A phase-change material layer is formed on the first electrode and the second spacer. A second electrode is formed on the phase-change material layer. Reset/set currents of the phase-change memory unit may be reduced and deterioration of the phase-change material layer may be reduced and/or prevented.

Abstract: Pneumatic radial tires are described having belt layers deposited under a tread and a ring-shaped water-splash control rib (100) formed on the sidewall (20), wherein the upper profile Lb of the rib is positioned above a continuation line (Ca) which extends along an average profile of an outmost belt layer and which is divided in to upper and lower profile of the outmost belt layer, the rib comprising drainage grooves or drainage protuberances in the upper profile of the rib, the height h of the rib is 0.085-0.115 times the width TW of the tread (0.085TW?h?0.115TW).

Abstract: An oscillator tuning system and an oscillator tuning method are provided. The system includes a determination unit which determines whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and a frequency tuner which tunes a driving frequency of the RFID oscillator according to a result of the determination. The method includes determining whether a power which is used in an RFID tag having an RFID oscillator is greater than a reference value; and tuning a driving frequency of the RFID oscillator according to a result of the determination.

Abstract: Disclosed is an all-optical frequency upconverter in a radio-over-fiber system that outputs upconverted optical radio frequency (RF) signals using an optical intermediate frequency signal and an optical local oscillation signal. The all-optical frequency upconverter includes a semiconductor optical amplifier that mixes the optical intermediate frequency signal with the optical local oscillation signal through four wave mixing, and an optical filter that filters a plurality of frequency component signals, which are generated through the four wave mixing, to extract optical RF signals. According to the invention the system configuration can be made simple, and wide LO and IF frequency bandwidths can be provided.

Abstract: A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.

Abstract: A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

Abstract: A radio frequency identification reader and a radio frequency identification tag that use an ultrahigh frequency band, and action methods of the radio frequency identification reader and the radio frequency identification tag. The radio frequency identification reader includes: a data generator generating data to be transmitted to a radio frequency identification tag; if a command to control the radio frequency identification tag has to be authenticated, a reader controller controlling the data generator to generate the data including an authentication code; and a reader transmitter transmitting the data to the radio frequency identification tag. As a result, securing of communications of a specific command between the radio frequency identification reader and the radio frequency identification tag can be reinforced.

Abstract: A non-volatile memory array includes an array of phase-changeable memory elements that are electrically insulated from each other by at least a first electrically insulating region extending between the array of phase-changeable memory elements. The first electrically insulating region includes a plurality of voids therein. Each of these voids extends between a corresponding pair of phase-changeable memory cells in the non-volatile memory array and, collectively, the voids form an array of voids in the first electrically insulating region.