Abstract: Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a photoresist layer pattern on the conductive layer, performing primary dry etching for the conductive layer after employing the photoresist layer pattern as a mask, thereby forming a wiring pattern, partially removing the photoresist layer pattern through secondary dry etching, thereby forming a passivation layer on a surface of the wiring pattern, performing tertiary dry etching for the wiring pattern and a diffusion barrier after employing the photoresist layer pattern as a mask, thereby forming a metal wiring, and removing the photoresist layer pattern.