Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Abstract: A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Abstract: Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Abstract: Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Abstract: A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2-tetrafluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1-difluoroethane, 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2,3,3,3-heptafluoropropane and (d) a fourth constituent selected from the group consisting of isobutane, 1,1,1,2,3,3-hexafluropropane and butane; or comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2-tetrafluoroethane, (c) a third constituent of 1,1,-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, isobutane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: In polymerizing biodegradable polymer material, a compressed gas is used as a reaction solvent for a solution-polymerization, in order to prepare biodegradable polyester homopolymer and copolymer with a high molecular weight in a fine powder form with a particle size of 0.01˜1000 &mgr;m.

Abstract: The present invention relates to a refrigerant composition of four-constituent system, comprising: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2,3,3,3-heptafluoropropane, (c) a third constituent selected from the group consisting of 1,1,1,2-tetrafluoroethane and 1,1-difluoroethane and (d) a for the constituent selected from the group consisting of isobutane, 1,1,1,2,3,3,-hexafluoropropane and butane, useful as a substitute for chlorodifluoromethane (HCFC-22).

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, isobutane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2,3,3,3-heptafluoropropane and (d) a fourth constituent selected from the group consisting of isobutane, 1,1,1,2,3,3-hexafluropropane and butane; or comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2-tetrafluoroethane, (c) a third constituent of 1,1,-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2-tetrafluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1-difluoroethane, 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: In a method for removing a wax material from a molded part, to remove a major binder, waxes, from a molded part fabricated by a powder injection molding method or a compression molding method, a supercritical mixed fluid of carbon dioxide and propane is used as a dewaxing solvent.

Abstract: The present invention relates to novel refrigerant mixtures as a substitute for chlorodifluoromethane (CHClF2, HCFC-22). More specifically, the invention is directed to refrigerant mixtures that comprise: difluoromethane (CH2F2, HFC-32) as the first component; pentafluoroethane (CHF2CF3, HFC-125) as the second component; 1,1,1,2-tetrafluoroethane (CH2FCF3, HFC-134a) as the third component; any one of cyclopropane (C3H6, RC-270), 1,1-difluoroethane (CH3CHF2, HFC-152a), 1,1,1,2,3,3,3-heptafluoropropane (CF3CHFCF3, HFC-227ea), 1,1,1,2,2-pentafluoropropane (CH3CF2CF3, HFC-245cb), octafluorocyclobutane (C4F8, RC-318), 1,1,1,2,3,3-hexafluoropropane (CHF2CHFCF3, HFC-236ea), bis(difluoromethyl)ether (CHF2OCHF2, HFE-134), pentafluoroethylmethylether (CF3CF2OCH3, HFE-245), n-pentane (C5H12, R-601) and isopentane ((CH3)2CHCH2CH3, R-601a) as the fourth component.

Abstract: The present invention relates to a refrigerant composition of four-constituent system, comprising: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2,3,3,3-heptafluoropropane, (c) a third constituent selected from the group consisting of 1,1,1,2-tetrafluoroethane and 1,1-difluoroethane and (d) a for the constituent selected from the group consisting of isobutane, 1,1,1,2,3,3,-hexafluoropropane and butane, useful as a substitute for chlorodifluoromethane (HCFC-22).