Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference. The first electrode includes a first active material portion coated with an active material layer and a first uncoated portion not coated with an active material layer along a winding direction. At least a part of the first uncoated portion is defined as an electrode tab by itself. The first uncoated portion includes a first portion adjacent to the core of the electrode assembly, a second portion adjacent to the outer circumference of the electrode assembly, and a third portion interposed between the first portion and the second portion. The first portion or the second portion has a smaller height than the third portion in the winding axis direction.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: An electrode assembly, a battery, a battery pack and a vehicle including the same are provided. In the electrode assembly, the uncoated portion of an electrode includes a segment region divided into a plurality of segments, and the segment region includes a plurality of segment groups separated by a group separation pitch along a winding direction. One end of the electrode assembly includes a plurality of segment alignments. In winding turns corresponding to the plurality of segment alignments, group separation pitches of segment groups disposed in a same winding turn are substantially identical, and separation pitches of the segment groups is greater in a winding turn of a region adjacent to the outer circumference of the electrode assembly than in a winding turn of a region adjacent to the core of the electrode assembly.

Abstract: A device for producing nanoparticles includes: a first connector comprising a first supply tube fitting member, a second supply tube fitting member, and a first discharge tube fitting member; a first tube having one side connected to the first supply tube fitting member; a second tube having one side connected to the second supply tube fitting member; a first conduit having one side connected to the first discharge tube fitting member; a first supply connected to another side of the first tube to supply a first material to the first conduit; and a second supply connected to another side of the second tube to supply a second material to the first conduit.

Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Abstract: A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Abstract: A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Abstract: Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Abstract: A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.

Abstract: A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided.

Abstract: Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

Abstract: A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.

Abstract: Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO2) having low pressure into the high pressure cleaner, injecting CO2 having lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical CO2 are mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical CO2 are mixed, into the high pressure cleaner, and separating CO2 from a mixture discharged from the high pressure cleaner.

Abstract: A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided.

Abstract: A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided.

Abstract: Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO2) having low pressure into the high pressure cleaner, injecting CO2 having lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical CO2 are mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical CO2 are mixed, into the high pressure cleaner, and separating CO2 from a mixture discharged from the high pressure cleaner.

Abstract: In polymerizing biodegradable polymer material, a compressed gas is used as a reaction solvent for a solution-polymerization, in order to prepare biodegradable polyester homopolymer and copolymer with a high molecular weight in a fine powder form with a particle size of 0.01˜1000 ?m.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2-tetrafluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1-difluoroethane, 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1,1,2,3,3,3-heptafluoropropane and (d) a fourth constituent selected from the group consisting of isobutane, 1,1,1,2,3,3-hexafluropropane and butane; or comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1,2-tetrafluoroethane, (c) a third constituent of 1,1,-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, 1,1,1,2,3,3-hexafluropropane and butane.

Abstract: A refrigerant composition that can be a substitute for chlorodifluoromethane (HCFC-22) comprises: (a) a first constituent of difluoromethane, (b) a second constituent of 1,1,1-trifluoroethane, (c) a third constituent of 1,1-difluoroethane, and (d) a fourth constituent selected from the group consisting of 1,1,1,2,3,3,3-heptafluoropropane, isobutane, 1,1,1,2,3,3-hexafluropropane and butane.