Abstract: Disclosed is a method of manufacturing a solder powder having a diameter of sub-micrometers or several micrometers, the method including: mixing solder powder having a diameter of 10 to 1000 micrometers with a polymer resin to obtain a mixture; heating the mixture to a temperature higher than a melting point of the solder powder in the mixture; applying ultrasonic waves to the heated mixture so that the diameter of the solder powder becomes 0.1 to 10 micrometers; and cooling the mixture to the room temperature without exposing the solder powder of 0.1 to 10 micrometers to the air.

Abstract: A conductive composition for a front electrode busbar of a silicon solar cell includes a metallic powder, a solder powder, a curable resin, a reducing agent, and a curing agent. A method of manufacturing a front electrode busbar of a silicon solar cell includes applying the composition to the front surface of the silicon solar cell wherein its front electrode finger line is formed. A substrate includes a front electrode busbar of a silicon solar cell, formed with a conductive composition. A silicon solar cell includes one or more electrodes containing a conductive composition including a conductive powder, a curable resin, a reducing agent, and a curing agent. A method of manufacturing the silicon solar cell includes forming a first electrode array with a first conductive composition, forming a second electrode, and forming a third electrode with a third conductive composition.

Abstract: Provided is a method and structure for bonding a flip chip while increasing the manufacturing yield. In the method, solder bumps are formed on first electrodes and/or second electrodes disposed on first and second substrates, respectively. In addition, the first and second electrodes are arranged to face each other with a second resin including spacer balls being disposed between the first and second substrates. In addition, while flowing the second resin, the first and second substrates are pressed until the distance between the first and second substrates is decreased smaller than diameter of the spacer balls so as to connect the solder bumps between the first and second electrodes.

Abstract: Provided is a composition for filling a Through Silicon Via (TSV) including: a metal powder; a solder powder; a curable resin; a reducing agent; and a curing agent. A TSV filling method using the composition and a substrate including a TSV plug formed of the composition are also provided.

Abstract: Disclosed is a vacuum wafer level packaging method for a micro electro mechanical system device, including: forming a plurality of via holes on an upper wafer for protecting a micro electro mechanical system (MEMS) wafer; forming at least one metal layer on inner walls of the plurality of via holes and regions extended from the plurality of via holes; arranging and bonding the upper wafer and the MEMS wafer at atmospheric pressure; applying solder paste to the regions extended from the plurality of via holes; filling a solder in the plurality of via holes by increasing the temperature of a high-vacuum chamber to melt the solder paste; and changing the solder in the plurality of via holes to a solid state by lowering the temperature of the high-vacuum chamber.

Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.

Abstract: Disclosed is a fabrication method for miniaturizing a film bulk acoustic wave resonator (FBAR) duplexer module including two FBAR filters, a tuning inductor, and a phase shifter. An exemplary embodiment of the present disclosure provides a method of miniaturizing a FBAR duplexer module, including forming a tuning inductor in a multilayer printed circuit board (PCB), forming a phase shifter in the multilayer PCB, and forming at least one of a transmitting FBAR filter and a receiving FBAR filter in the multilayer PCB.

Abstract: Provided is an electronic device that includes an LTCC inductor including a first sheet disposed on a substrate and including a first conductive pattern, a second sheet disposed on the first sheet and including a second conductive pattern, and a via electrically connecting the first conductive pattern to the second conductive pattern, and a spacer disposed on a lower surface of the first sheet to provide an air gap between the substrate and the first sheet, wherein the first conductive pattern is exposed out of the lower surface of the first sheet.

Abstract: A method for fabricating a semiconductor package, includes the steps of forming a first terminal at a first substrate; mixing a polymer resin and solder particles to provide a mixture; covering at least one of an upper surface and side surfaces of the first terminal with the mixture; and heating the first substrate at a temperature higher than a melting point of the solder particles of the mixture to form a solder layer that covers the at least one of an upper surface and a side surface of the first terminal. The solder particles flow or diffuse toward the terminal in the heated polymer resin to adhere to at least some of the exposed surfaces of the terminal thereby forming the solder layer. The solder layer improves the adhesive strength between the terminals of the semiconductor chip and the substrate in the subsequent flip chip bonding process.

Abstract: Provided is a filling composition. The filling composition includes: a first particle including Cu and/or Ag; a second particle electrically connecting the first particles; and a resin containing a high molecular compound, a hardener, and a reducer, in which the first and second particles are dispersed, wherein the hardener includes amine and/or anhydride, and the reducer includes carboxyl.

Abstract: Provided are a wafer level package in which a communication line can be readily formed between an internal device and the outside of the package, and a method of fabricating the wafer level package. The wafer level package includes a first substrate having a cavity in which a first internal device is disposed, an Input/Output (I/O) pad formed on the first substrate and electrically connected with the first internal device, a second substrate disposed over the first substrate and from which a part corresponding to the I/O pad is removed, and a solder bonding the first and second substrates. According to the wafer level package and the method of fabricating the same, upper and lower substrates are sawed to different cutting widths, or a hole is formed in the upper substrate, such that a communication line of an internal device can be readily formed without a via process which penetrates a substrate.

Abstract: Provided is a method for fabricating a device package. The method includes: preparing a substrate where respectively corresponding device structures and input and output pads are disposed on an active surface; preparing a carrier substrate where a metal lid corresponding to the device structure is disposed on one surface; and contacting the active surface of the substrate with the metal lid of the carrier substrate to cover and seal the device structure corresponding to the metal lid.

Abstract: Provided is a package structure. The package structure includes a first substrate, a first device, a second substrate, a first via contact, and at least one second device. The first device is formed on the first substrate. The second substrate has an air gap over the first substrate and covers the first device. The first via contact is connected to the first device through the second substrate. At least one second device is electrically connected to the first via contact, and is stacked on the second substrate.

Abstract: Provided is a method and structure for bonding a flip chip while increasing the manufacturing yield. In the method, solder bumps are formed on first electrodes and/or second electrodes disposed on first and second substrates, respectively. In addition, the first and second electrodes are arranged to face each other with a second resin including spacer balls being disposed between the first and second substrates. In addition, while flowing the second resin, the first and second substrates are pressed until the distance between the first and second substrates is decreased smaller than diameter of the spacer balls so as to connect the solder bumps between the first and second electrodes.

Abstract: Provided is an electronic device that includes an LTCC inductor including a first sheet disposed on a substrate and including a first conductive pattern, a second sheet disposed on the first sheet and including a second conductive pattern, and a via electrically connecting the first conductive pattern to the second conductive pattern, and a spacer disposed on a lower surface of the first sheet to provide an air gap between the substrate and the first sheet, wherein the first conductive pattern is exposed out of the lower surface of the first sheet.

Abstract: Provided is a method for fabricating semiconductor package and a semiconductor package fabricated using the same. The method for fabricating semiconductor package dopes a mixture including the polymer material and the solder particle on the substrate in which the terminal is formed and applies heat, and thus the solder particle flows (or diffuses) toward the terminal in the heated polymer resin to adhere to the exposed surface of the terminal, i.e., the side surface and upper surface of the terminal, thereby forming the solder layer. The solder layer improves the adhesive strength between the terminal of the semiconductor chip and the terminal of the substrate in the subsequent flip chip bonding process.

Abstract: Provided are a buried capacitor, a method of manufacturing the same, and a method of changing a capacitance thereof. The buried capacitor includes an upper electrode including at least one first hole, a lower electrode including at least one second hole, and a dielectric interposed between the upper electrode and the lower electrode.

Abstract: Provided are an inductor, which is vertically formed, and an electronic device having the inductor, and more particularly, an inductor capable of minimizing loss of a surface area and accomplishing high efficiency impedance by vertically forming the inductor in a plurality of insulating layers, and an electronic device having the same. The inductor includes a plurality of conductive lines disposed in the insulating layers; and vias vertically formed in the insulating layers to electrically connect the plurality of conductive lines. When a board or an electronic device including an inductor proposed by the present invention is manufactured, the inductor can occupy a minimum area in the electronic device or board while providing high inductance. In particular, the surface area of the electronic device or board occupied by the inductor can be remarkably decreased to reduce manufacturing costs.

Abstract: Provided is a microstrip patch antenna. The microstrip patch antenna includes a dielectric layer, a feed circuit disposed in the dielectric layer, at least one slot disposed in the dielectric layer and vertically spaced apart from the feed circuit, and a patch antenna disposed outside the dielectric layer and vertically spaced apart from the at least one slot.

Abstract: Provided are a composition for an anisotropic conductive adhesive, a method of forming a solder bump and a method of forming a flip chip using the same. The composition for an anisotropic conductive adhesive includes a low melting point solder particle and a thermo-curable polymer resin. The anisotropic conductive adhesive includes forming a mixture by mixing a polymer resin and a curing agent, and mixing a deforming agent, a catalyst or a reductant with the mixture.