Abstract: The present disclosure relates to an organic light emitting diode in which an emitting material layer disposed between two electrodes includes a first compound forming a fused ring among a boron atom and at least one of oxygen atom, sulfur atom and a selenium atom, and a second compound forming a fused ring between a boron atom and a nitrogen atom, and an organic light emitting device including the organic light emitting diode. The first compound and the second compound may be included in the same emitting material layer or adjacently disposed emitting material layers. The organic light emitting diode includes the emitting material layer where includes first and second compounds with adjusting their energy levels so that driving voltages of the organic light emitting diode can be lowered and luminous efficiency and luminous lifetime of the organic light emitting diode can be improved.

Abstract: An organic electroluminescence device exhibiting high light emission efficiency is provided, which includes a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode. The emission layer may include a compound represented by Formula 1.

Abstract: Provided is an electroplating solution for an indium-bismuth alloy for low-temperature solder, which has a melting point of approximately 140° C. or lower and is capable of inhibiting the displacement of bismuth when manufacturing solder wires. The electroplating solution for an indium-bismuth alloy includes a supplying source of indium ions, a supplying source of bismuth ions, a combination of polyoxyethylene lauryl amine ether and ethoxylated acetylenic diol as a surfactant, carboxylic acid or carboxylate as a complexing agent, and a mercaptotetrazole compound as an auxiliary complexing agent.

Abstract: The present disclosure relates to an organic light emitting diode in which an emitting material layer disposed between two electrodes includes a first compound in which an electron donor moiety is liked to an electron acceptor moiety via a carbon-carbon bond, and a second compound forming a fused ring between a boron atom and a nitrogen atom, and an organic light emitting device including the organic light emitting diode. The first compound and the second compound may be included in the same emitting material layer or adjacently disposed emitting material layers.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Abstract: The present disclosure relates to an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and a first emitting part including a first red emitting material layer and positioned between the first and second electrode, the first red emitting material layer including a first delayed fluorescent compound, a second delayed fluorescent compound and a first fluorescent compound, wherein the first delayed fluorescent compound is represented by Formula 1, the second delayed fluorescent compound is represented by Formula 3, and the first fluorescent compound is represented by Formula 5.

Abstract: This invention discloses a sensor for measuring parameters of sweat from a skin, comprising a flexible structure comprising a fluid passage having inlet and outlet, the flexible structure being detachably attached to the skin and configured such that sweat enters the inlet as the sweat releases from the skin and flows through the fluid passage into the outlet; a thermal actuator disposed on the flexible structure over the fluid passage and configured to operably provide heat to flow of the sweat through the fluid passage; a first thermistor disposed on the flexible structure over the fluid passage between the inlet and the thermal actuator and configured to operably measure a first temperature of the sweat thereon; and a second thermistor disposed on the flexible structure over the fluid passage between the thermal actuator and the outlet and configured to operably measure a second temperature of the sweat thereon.

Abstract: An organic light emitting device including: a substrate defining a first pixel region and a second pixel region; and an organic light emitting diode over the substrate. The organic light emitting diode includes a transmissive electrode, a reflective electrode facing the transmissive electrode and an emissive layer disposed between the transmissive electrode and the reflective electrode. The emissive layer includes a first emissive layer and a second emissive layer. The first emissive layer is in the first pixel region and includes: a first blue emitting material layer including a first blue fluorescent compound, and a second blue emitting material layer including a second blue fluorescent compound and a blue phosphorescent compound. The second emissive layer is in the second pixel region and includes: a first green emitting material layer including a first green delayed fluorescent compound, and a second green emitting material layer including a second green delayed fluorescent compound.

Abstract: The present invention relates to an organic light emitting diode and an organic light emitting device including the organic light emitting diode. The organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first blue emitting material layer including a first compound and a second compound and positioned between the first and second electrodes, wherein the first compound is represented by Formula 1, and the second compound is represented by Formula 3.

Abstract: An organic light emitting diode includes at least one emitting material layer disposed between two electrodes includes a first compound having an azine moiety substituted two cyano groups and a carbazole moiety linked to the azine moiety through a phenylene group, and a second compound of a boron-based fluorescent material and an organic light emitting device including the organic light emitting diode. The excitons generated at the first compound are transferred efficiently to the second compound so that the luminous properties of the organic light emitting diode and/or the organic light emitting device can be improved.

Abstract: Provided is an electroplating solution for an indium-bismuth alloy for low-temperature solder, which has a melting point of approximately 140° C. or lower and is capable of inhibiting the displacement of bismuth when manufacturing solder wires. The electroplating solution for an indium-bismuth alloy includes a supplying source of indium ions, a supplying source of bismuth ions, a combination of polyoxyethylene lauryl amine ether and ethoxylated acetylenic diol as a surfactant, carboxylic acid or carboxylate as a complexing agent, and a mercaptotetrazole compound as an auxiliary complexing agent.

Abstract: The present invention relates to an organic light emitting diode and an organic light emitting device including the organic light emitting diode. The organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first blue emitting material layer including a first compound, a second compound and a third compound and positioned between the first and second electrodes, wherein the first compound is represented by Formula 1, the second compound is represented by Formula 3, and the third compound is represented by Formula 5, and wherein in the first blue emitting material layer, a summation of a weight % of the first compound, a weight % of the second compound and a weight % of the third compound is 100%, and the weight % of each of the first and second compounds is greater than the weight % of the third compound.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Abstract: Provided is an electroplating solution of tin or a tin alloy in which the thickness variation of wafer bumps is maintained at a low level even in various changes of plating conditions and thus the mass productivity is improved. The electroplating solution of tin or a tin alloy may include tin ions as metal ions, a conductive salt, a carboxylic acid as a structure refiner, and a combination of a flavone compound and a quaternary ammonium compound as a thickness variation improving agent.

Abstract: A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.

Abstract: Provided is a thermally activated delayed fluorescence organic EL device having high emission efficiency and a long lifetime. An organic EL device comprising light emitting layers between an anode and a cathode opposite to each other; wherein at least one of the light emitting layers contains, as a thermally activated delayed fluorescence material, a compound in which a boron-containing electron acceptor backbone is linked with an electron donor backbone having a specific fused ring structure; and the compound is represented by the following general formula (1) where X1 is O or S.

Abstract: This invention discloses a sensor for measuring parameters of sweat from a skin, comprising a flexible structure comprising a fluid passage having inlet and outlet, the flexible structure being detachably attached to the skin and configured such that sweat enters the inlet as the sweat releases from the skin and flows through the fluid passage into the outlet; a thermal actuator disposed on the flexible structure over the fluid passage and configured to operably provide heat to flow of the sweat through the fluid passage; a first thermistor disposed on the flexible structure over the fluid passage between the inlet and the thermal actuator and configured to operably measure a first temperature of the sweat thereon; and a second thermistor disposed on the flexible structure over the fluid passage between the thermal actuator and the outlet and configured to operably measure a second temperature of the sweat thereon.

Abstract: The disclosed coil-integrated housing component may include an injection-molded housing dimensioned to house a display module of a computing device. Additionally, the coil-integrated housing component may include a conductive coil integrated into the injection-molded housing to surround a periphery of the display module, wherein the conductive coil may be electronically coupled to the computing device. Various other apparatuses, systems, and methods are also disclosed.

Abstract: Provided is an electroplating solution of tin or a tin alloy in which the thickness variation of wafer bumps is maintained at a low level even in various changes of plating conditions and thus the mass productivity is improved. The electroplating solution of tin or a tin alloy may include tin ions as metal ions, a conductive salt, a carboxylic acid as a structure refiner, and a combination of a flavone compound and a quaternary ammonium compound as a thickness variation improving agent.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.