Abstract: An organic electroluminescence device exhibiting high light emission efficiency is provided, which includes a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode. The emission layer may include a compound represented by Formula 1.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: A vertically foldable camera monitoring system includes a base fixedly mounted to a body of a vehicle, and a camera module coupled to the base, the camera module configured to provide a field of view at lateral and rear sides of the vehicle. The camera module includes a damper unit connected to the base and configured to be extended or retracted in length by a driving unit, a support member connected to the damper unit while supporting a camera, and a horizontal bar engaged at a first end with a guide slot provided at the support member while being disposed at a second end adjacent to the damper unit. The driving unit drives the camera module to be extended or to be rotated in an upward direction.

Abstract: Provided is a cap-type vent having a porous waterproof air-permeable sheet inserted and mounted in a cap housing having fixing ribs formed therein, and fixing the waterproof air-permeable sheet by a supporting member made from an elastic material. The provided cap-type vent comprises a supporting member having one end coupled to an object, a waterproof air-permeable sheet disposed at the other end of the supporting member; and a cap housing formed in a cup shape having an opening formed at one end of the cup shape, and having the supporting member and the waterproof air-permeable sheet inserted through the opening, the supporting member is formed with an air circulation hole formed by penetrating the supporting member, and the inner side surface of the cap housing is formed with a fixing rib is configured to fix the supporting member by contacting the outer sidewall of the supporting member.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: A camera monitoring system includes: a housing rotatable around a coupling shaft of a base part disposed in a vehicle; a camera disposed on one end of the housing; a cam plate disposed inside the housing and fixed to the base part; a link including a first end moving along a guide part of the cam plate and a second end to rotate the camera when the housing rotates; a driving part for applying a driving force to rotate the housing; and a control part to determine a folded state of the housing by controlling the driving force applied from the driving part based on a vehicle speed, and to rotate the camera simultaneously with the housing based on the folded state of the housing so as to maintain a previously set angle of a camera view.

Abstract: A vertically foldable camera monitoring system includes a base fixedly mounted to a body of a vehicle, and a camera module coupled to the base, the camera module configured to provide a field of view at lateral and rear sides of the vehicle. The camera module includes a damper unit connected to the base and configured to be extended or retracted in length by a driving unit, a support member connected to the damper unit while supporting a camera, and a horizontal bar engaged at a first end with a guide slot provided at the support member while being disposed at a second end adjacent to the damper unit. The driving unit drives the camera module to be extended or to be rotated in an upward direction.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: A camera monitoring system includes: a housing rotatable around a coupling shaft of a base part disposed in a vehicle; a camera disposed on one end of the housing; a cam plate disposed inside the housing and fixed to the base part; a link including a first end moving along a guide part of the cam plate and a second end to rotate the camera when the housing rotates; a driving part for applying a driving force to rotate the housing; and a control part to determine a folded state of the housing by controlling the driving force applied from the driving part based on a vehicle speed, and to rotate the camera simultaneously with the housing based on the folded state of the housing so as to maintain a previously set angle of a camera view.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: Provided is a cap-type vent having a porous waterproof air-permeable sheet inserted and mounted in a cap housing having fixing ribs formed therein, and fixing the waterproof air-permeable sheet by a supporting member made from an elastic material. The provided cap-type vent comprises a supporting member having one end coupled to an object, a waterproof air-permeable sheet disposed at the other end of the supporting member; and a cap housing formed in a cup shape having an opening formed at one end of the cup shape, and having the supporting member and the waterproof air-permeable sheet inserted through the opening, the supporting member is formed with an air circulation hole formed by penetrating the supporting member, and the inner side surface of the cap housing is formed with a fixing rib is configured to fix the supporting member by contacting the outer sidewall of the supporting member.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Abstract: Disclosed is a patterning device. The patterning device may include a substrate; a patterned layer disposed on the substrate and including a first pattern formed on a surface thereof; a heat generating layer disposed on the patterned layer, including a second pattern (corresponding to the first pattern) formed on a surface thereof, and generating heat when electric power is supplied; and a first electrode and a second electrode disposed on the heat generating layer, spaced apart from each other, and electrically connected to the heat generating layer.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Abstract: A display apparatus capable of image scanning is provided including a contact sensor arranged in each unit pixel. The contact sensor includes a pixel electrode forming a contact capacitance by contact with a contact means; a reset transistor where a drain electrode is connected to a node where the contact capacitance is formed, and each of a gate electrode and a source electrode is connected to a first scan line to which a selective signal is applied; an amplifying transistor where a gate electrode is connected to the drain electrode of the reset transistor; and a detecting transistor where a drain electrode is connected to the drain electrode of the amplifying transistor, a gate electrode is connected to a second scan line to which a selective signal is applied, and a source electrode is connected to a readout line detecting a current corresponding to the contact capacitance.