Abstract: Sensing operations involving a first array of bit line sense amplifiers (BLSAs) may be powered by an upper reference voltage and a first intermediate voltage and the first array may be precharged to a voltage level therebetween. Sensing operations involving a second array of BLSAs may be powered by a second intermediate voltage (greater than the first intermediate voltage) and a lower reference voltage and the second array may be precharged to a voltage level therebetween. After precharge, charge may be transferred from a second power line of the first array to a first power line of the second array. Subsequently, the second power line of the first array may be coupled to a power supply node at the first intermediate voltage level and the first power line of the second array may be coupled to a power supply node at the second intermediate voltage level.

Abstract: Buffer circuits and techniques that reduce skew between rising and falling times of output data as process conditions vary are provided. One or more process-dependent current sources may be utilized to compensate for process variations by supplementing the current drive of transistors used to precharge (PMOS) or discharge (NMOS) an output node of a secondary (e.g., inverter) stage of the buffer circuit.

Abstract: In a method for manufacturing Ni—Al alloy powders for electrode materials of fuel cells, in which, using aluminum chloride (AlCl3) as a catalyst, powders of Ni and Al, that have been used as electrode materials, are chemically reacted with each other to diffuse the Al into the Ni powders, so that Ni—Al alloy powders can be manufactured at a low temperature below fusion points of Ni and Al while maintaining a shape and a size of the existing Ni powders as they are, thus providing a manufacturing process of Ni—Al alloy powders that is simple, economical, compatible in working, and ready for scale-up, and in which a conventional manufacturing process of electrode based on Ni is used as it is, so that large sized electrode is manufactured.

Abstract: Embodiments of the present invention are illustrated in a random access memory. In one embodiment, a random access memory comprises an array of memory cells, a write circuit, and an input buffer configured to receive data and pass the received data to the write circuit that writes the received data into the array of memory cells. The input buffer comprises a differential amplifier configured to receive the data and in response to the received data supply a first signal and a second signal that is the compliment of the first signal. The input buffer also comprises a first transistor configured to be controlled by the first signal and a second transistor configured to be controlled by the second signal. The first transistor and the second transistor are turned on to provide a current path through the first transistor and the second transistor to change the first signal in response to a transition in the received data.

Abstract: Techniques and circuit configurations for fine phase adjustments, for example, in a delay-locked loop (DLL) circuit are provided. Multiple phase signals may be generated from a single current source by selectively coupling one or more delay elements to an output node of the current source. The delay elements may vary the timing of a signal generated by switching the current source.

Abstract: A method and apparatus for ensuring safe transmission of data on a bus line. In one embodiment, within a given clock period, first data is driven on a data bus and a strobe signal is transmitted, via a first signal path, to a receiving circuit indicating the validity of the first data on the data bus. A return signal received within the given clock period indicates an assumed arrival of the strobe signal at the receiving circuit. In response to receiving the return signal, second data is driven onto the data bus.

Abstract: Sensing operations involving a first array of bit line sense amplifiers (BLSAs) may be powered by an upper reference voltage and a first intermediate voltage and the first array may be precharged to a voltage level therebetween. Sensing operations involving a second array of BLSAs may be powered by a second intermediate voltage (greater than the first intermediate voltage) and a lower reference voltage and the second array may be precharged to a voltage level therebetween. After precharge, charge may be transferred from a second power line of the first array to a first power line of the second array. Subsequently, the second power line of the first array may be coupled to a power supply node at the first intermediate voltage level and the first power line of the second array may be coupled to a power supply node at the second intermediate voltage level.

Abstract: One embodiment of the present invention provides a random access memory device including a memory array, a level detector, and an off-chip driver circuit. The level detector monitors a source voltage and provides a level signal representative of a voltage range of the source voltage. The off-chip driver circuit is associated with the memory array and provides an output signal having at least one operating parameter, and adjusts the at least one operating parameter by adjusting a magnitude of at least one impedance based on the level signal.

Abstract: A method and circuit configuration for digitizing data and control signals using an input buffer in a dynamic random access memory (DRAM) device. In one embodiment, the input buffer includes buffer modules having a differential amplifier with a first input responsive to an input signal and a second input responsive to a reference voltage, a common source stage, and an output stage and a source of a bias voltage controlling impedance of the common source stage, wherein the reference voltage defines the amplitude of the bias voltage.

Abstract: A random access memory comprises a latching circuit configured to receive a first signal and provide a second signal corresponding to the first signal to latch data signals into the random access memory. The random access memory comprises a logic circuit configured to provide a first response after a predetermined number of the data signals have been latched into the random access memory by the second signal. The latching circuit is configured to receive the first response and lock the second signal to a logic level based on the first signal and the first response to prevent inadvertent latching of other data signals.

Abstract: A random access memory comprises a first circuit configured to receive a strobe signal and provide pulses in response to transitions in the strobe signal. The random access memory comprises a second circuit configured to receive the strobe signal to latch data into the second circuit, and to receive the pulses to latch the latched data into the second circuit after the transitions in the strobe signal.

Abstract: In a method for manufacturing Ni—Al alloy anode for fuel cells, in which, using nickel powders, Ni powders are mixed with Ni—Al alloy powders, which are hardly sintered in themselves, to assist a sintering of Ni—Al alloy, whereby Ni—Al alloy anode can be manufactured simply, economically and compatibly with mass production even by a conventional manufacturing process for an electrode.

Abstract: Methods and circuit configurations for multiple recycling of charge during a refresh operation in a memory device, such as a dynamic random access memory (DRAM) device, are provided. Charge from one or more power lines of a first array of bit line sense amplifiers involved in a first refresh operation may be transferred to one or more power lines of at least second and third arrays of bit line sense amplifiers involved in subsequent refresh operations.

Abstract: Methods and circuits for reducing unnecessary changes to outputs of latch circuits are provided. Unnecessary changes to outputs of latch circuits may be reduced by preventing the outputs of the latch circuits from changing when an invalid command is detected. For some embodiments, an invalid command detector is provided that generates an invalid command signal used to inhibit latch circuits, in response to detecting an invalid command.

Abstract: The present invention provides an anode for a Molten Carbonate Fuel Cell (MCFC) and a MCFC including the same, particularly an anode for the MCFC coated by a porous ceramic film, when the invention is used, the wettability of the anode to the molten carbonate used as the electrolyte for the MCFC and the amount of impregnated electrolyte will be greatly improved, and thus is very useful in viewpoint that it can prevent any electrolyte loss that is often observed in the long periods of operation of the MCFC, and maintain a high stability of the cell for an extended period of time, compared with the conventional cell. Also, the present invention itself is applicable to an electrode made of Ni-based alloys or metal compounds, which is expected to be competent MCFC materials nowadays, as well as the electrode made of Ni, Ni—Cr and Ni—Al alloy used in the present invention.

Abstract: In a method for manufacturing Ni—Al alloy powders for electrode materials of fuel cells, in which, using aluminum chloride (AlCl3) as a catalyst, powders of Ni and Al, that have been used as electrode materials, are chemically reacted with each other to diffuse the Al into the Ni powders, so that Ni—Al alloy powders can be manufactured at a low temperature below fusion points of Ni and Al while maintaining a shape and a size of the existing Ni powders as they are, thus providing a manufacturing process of Ni—Al alloy powders that is simple, economical, compatible in working, and ready for scale-up, and in which a conventional manufacturing process of electrode based on Ni is used as it is, so that large sized electrode is manufactured.

Abstract: An improved delay chain for use in a delay locked loop which provides smooth phase adjustment and high resolution. In a delay chain having a series of cascaded unit delay elements, the outputs of a pair of contiguous delay elements (N, N+1) are selected for input to a phase blender. A coarse delay adjustment is carried out by selecting the outputs of the next pair of contiguous delay elements (N+1, N+2) and thus affects only one of the phase blender inputs. The phase blender provides a fine delay adjustment by generating an output whose phase is a weighted combination of the inputs, the weights having an inverse relationship. A coarse delay adjustment which affects an input of the phase blender is carried out when the weighting of that input is zero. Fine-to-coarse hand-over problems which characterize known delay locked loops are thus avoided.

Abstract: An improved delay chain for use in a delay locked loop which provides smooth phase adjustment and high resolution. In a delay chain having a series of cascaded unit delay elements, the outputs of a pair of contiguous delay elements (N, N+1) are selected for input to a phase blender. A coarse delay adjustment is carried out by selecting the outputs of the next pair of contiguous delay elements (N+1, N+2) and thus affects only one of the phase blender inputs. The phase blender provides a fine delay adjustment by generating an output whose phase is a weighted combination of the inputs, the weights having an inverse relationship. A coarse delay adjustment which affects an input of the phase blender is carried out when the weighting of that input is zero. Fine-to-coarse hand-over problems which characterize known delay locked loops are thus avoided.

Abstract: The present invention provides an anode for a Molten Carbonate Fuel Cell (MCFC) and a MCFC including the same, particularly an anode for the MCFC coated by a porous ceramic film, when the invention is used, the wettability of the anode to the molten carbonate used as the electrolyte for the MCFC and the amount of impregnated electrolyte will be greatly improved, and thus is very useful in viewpoint that it can prevent any electrolyte loss that is often observed in the long periods of operation of the MCFC, and maintain a high stability of the cell for an extended period of time, compared with the conventional cell. Also, the present invention itself is applicable to an electrode made of Ni-based alloys or metal compounds, which is expected to be competent MCFC materials nowadays, as well as the electrode made of Ni, Ni—Cr and Ni—Al alloy used in the present invention.

Abstract: Disclosed is an electrode having a novel configuration for improving performance of the electrode used in solid-oxide fuel cells, sensors and solid state devices, in which the electrode providing electron conductivity is coated with ion conductive ceramic ceria film, enabling an electron conductive path and an ion conductive path to be independently and continuously maintained, and additionally extending a triple phase boundary where electrode/electrolyte/gas are in contact, and a method for manufacturing the same. The electrode is manufactured by coating the prefabricated electrode for use in a SOFC or sensor with a porous oxygen ion conductive ceramic ceria film by a sol-gel method, whereby the electron conductive material and ion conductive material exist independently, having a new microstructure configuration with a greatly extended triple phase boundary, thus improving electrode performance.