Abstract: Disclosed is a system-on-chip. The system-on-chip including at least one operation processing unit configured to process an instruction based on a driving voltage and a clock signal, a temperature management module configured to estimate a cooling coefficient and a heating coefficient associated with the at least one operation processing unit based on a temperature measured at the at least one operation processing unit, and determine an operating frequency of the clock signal to be sent to the at least one operation processing unit based on the cooling coefficient and the heating coefficient, and a dynamic voltage and frequency scaling (DVFS) module configured to output a control signal for adjusting the driving voltage and the clock signal based on the operating frequency.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: A motor for a washing machine includes a stator and a rotor. The rotor includes a rotor casing including a base portion formed in a disk shape and a vertical wall extending substantially perpendicularly from an outer periphery of the base portion, a permanent magnet provided on an inner surface of the vertical wall of the rotor casing, and a connecting member provided at a center of the base portion of the rotor casing and connected to a shaft. The base portion of the rotor casing includes a first ring portion facing a coil portion of the stator and a second ring portion, provided with a plurality of air inlet holes, that is positioned between the first ring portion and the connecting member and does not face the coil portion of the stator.

Abstract: A method for preparing a radiopharmaceutical and, specifically, a method for preparing an organic fluoride-aliphatic compound usable as a radiopharmaceutical, a method for purifying the prepared organic fluoride-aliphatic compound, and a method for preparing a radiopharmaceutical by using a cassette comprising a backdraft preventing reaction container. A method for preparing an organic fluorinated aliphatic compound includes allowing a fluorine salt to react with a leaving group-containing aliphatic compound by using a multifunctional solvent represented by the following Chemical Formula 1 to obtain an aliphatic compound labeled with [18F] fluoride substituting for the leaving group. The organic fluoride-aliphatic compound can be prepared and purified through even a simple process at high yield, high efficiency, and high purity, and the radiopharmaceutical can be safely prepared without damage to a synthetic apparatus.

Abstract: A semiconductor device includes an insulating interlayer disposed on a substrate, a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer includes a via hole and a first trench. The via hole extends through a lower portion of the insulating interlayer. The first trench is connected to the via hole and extends through an upper portion of the insulating interlayer. The first protection pattern covers a lower surface and sidewalls of the via hole and a portion of a lower surface and a lower sidewall of the first trench, and includes a conductive material. The first barrier pattern covers the protection pattern and an upper sidewall of the first trench. The first adhesion pattern covers the first barrier pattern. The first conductive pattern is disposed on the first adhesion pattern, and fills the via hale and the first trench.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: A semiconductor device includes an insulating interlayer disposed on a substrate, a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer includes a via hole and a first trench, The via hole extends through a lower portion of the insulating interlayer. The first trench is connected to the via hole and extends through an upper portion of the insulating interlayer, The first protection pattern covers a lower surface and sidewalls of the via hole and a portion of a lower surface and a lower sidewall of the first trench, and includes a conductive material. The first barrier pattern covers the protection pattern and an upper sidewall of the first trench. The first adhesion pattern covers the first barrier pattern. The first conductive pattern is disposed on the first adhesion pattern, and fills the via hale and the first trench.

Abstract: A motor for a washing machine includes a stator and a rotor. The rotor includes a rotor casing including a base portion formed in a disk shape and a vertical wall extending substantially perpendicularly from an outer periphery of the base portion, a permanent magnet provided on an inner surface of the vertical wall of the rotor casing, and a connecting member provided at a center of the base portion of the rotor casing and connected to a shaft. The base portion of the rotor casing includes a first ring portion facing a coil portion of the stator and a second ring portion, provided with a plurality of air inlet holes, that is positioned between the first ring portion and the connecting member and does not face the coil portion of the stator.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom suffice of the first trench.

Abstract: A method for preparing a radiopharmaceutical and, specifically, a method for preparing an organic fluoride-aliphatic compound usable as a radiopharmaceutical, a method for purifying the prepared organic fluoride-aliphatic compound, and a method for preparing a radiopharmaceutical by using a cassette comprising a backdraft preventing reaction container. A method for preparing an organic fluorinated aliphatic compound includes allowing a fluorine salt to react with a leaving group-containing aliphatic compound by using a multifunctional solvent represented by the following Chemical Formula 1 to obtain an aliphatic compound labeled with [18F] fluoride substituting for the leaving group. The organic fluoride-aliphatic compound can be prepared and purified through even a simple process at high yield, high efficiency, and high purity, and the radiopharmaceutical can be safely prepared without damage to a synthetic apparatus.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.