Abstract: Compounds comprise a C6-30 aromatic or C3-30 heteroaromatic core, wherein the core comprises a first substituent comprising (i) an enol ether group or (ii) a halomethyl ether group, wherein the halomethyl ether group is substituted or unsubstituted, a second substituent comprising an acid labile group, and a third substituent that is a halogen atom. The core is optionally further substituted. The compounds find use in the synthesis of monomers and polymers, which may be used in photoresist compositions for the manufacture of electronic devices.

Abstract: A combined combustion burner and a combustion apparatus including the combined combustion burner. The combined combustion burner may include a center tube forming a center passage configured to supply cooling air, a fuel tube surrounding the center tube and forming a fuel passage through which premixed fuel mixed with solid fuel and primary air is sprayed, a secondary tube surrounding the fuel tube and forming a secondary passage through which secondary air is sprayed, and an additional spray nozzle inserted inside the center tube and configured to spray auxiliary fuel containing ammonia.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: A polymer including a first repeating unit derived from a first monomer represented by formula (1); and a second repeating unit comprising an acid labile group, a hydroxyaryl group, a sulfonamide group, a fluoroalcohol group, or a combination thereof, wherein, in formula (1), P is a polymerizable group comprising an ethylenically unsaturated carbon-carbon double bond; L1 is a single bond or a linking group; Ar is a substituted or unsubstituted C6-30 aromatic group or a substituted or unsubstituted C4-30 heteroaromatic group; X is O or S; A is a group selected from —O—, —S—, —S(O)—, —S(O)2—, —C(O)—, —C(S)—, or —N(Ra)—; Ra is hydrogen or a non-hydrogen substituent; and R1 and R2 are each as defined herein, wherein the first repeating unit and the second repeating unit are structurally different.

Abstract: A compound represented by Formula (1): wherein X is a group having a valency of r; each R1 is independently an organic group comprising an acid-labile group; m is an integer greater than or equal to 1; k is an integer from 1 to 5; and r is an integer from 2 to 10, wherein the compound is non-polymeric, and wherein Ar1, L1, L2, R2, and R3 are as defined herein.

Abstract: A photoactive compound of formula (1a) or (1b): wherein R1 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-30 aryl, or substituted or unsubstituted C3-30 heteroaryl comprising an aromatic ring heteroatom chosen from nitrogen, oxygen, or a combination thereof; R2 and R3 are as provided herein; R4 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-30 aryl, or substituted or unsubstituted C3-30 heteroaryl; and M+ is an organic cation.

Abstract: A photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.

Abstract: A compound comprising an aromatic group or a heteroaromatic group, wherein the aromatic group or the heteroaromatic group comprises a first substituent group comprising an ethylenically unsaturated double bond, a second substituent group that is an iodine atom, and a third substituent group comprising an acid-labile group, wherein the first substituent group, the second substituent group, and the third substituent group are each bonded to a different carbon atom of the aromatic group or the heteroaromatic group.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: A polymer comprising a first repeating unit derived from a monomer comprising a hydroxy-aryl group; a second repeating unit derived from a monomer comprising a hydroxy-aryl group protected with an acetal or ketal group; a third repeating unit derived from a (meth)acrylate monomer comprising a cycloaliphatic group; and a fourth repeating unit derived from a monomer comprising an acid-sensitive group, wherein the first, the second, the third, and the fourth repeating units are different from each other.

Abstract: A polymer comprising: a first repeating unit comprising a tertiary ester acid labile group; and a second repeating unit of Formula (1): wherein R1 to R5 are as provided herein; R2 and R3 together do not form a ring; each A is independently a halogen, a carboxylic acid or ester, a thiol, a straight chain or branched C1-20 alkyl, a monocyclic or polycyclic C3-20 cycloalkyl, a monocyclic or polycyclic C3-20 fluorocycloalkenyl, a monocyclic or polycyclic C3-20 heterocycloalkyl, a monocyclic or polycyclic C6-20 aryl, or a monocyclic or polycyclic C4-20 heteroaryl, each of which is substituted or unsubstituted; and m is an integer of 0 to 4.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Provided is a device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, wherein the device further comprises an opaque element that prevents light emitted by the light-emitting optoelectronic element from reaching the photocurrent-generating optoelectronic element via a pathway within the device.

Abstract: A photoresist composition, including a polymer having a C6-30 hydroxyaromatic group, a solvent, and a sulfonium salt having Formula (I): wherein, in Formula (I), R, R1 to R8, X, n, and Rf are the same as described in the specification.

Abstract: A photoresist composition, including a polymer having a C6-30 hydroxyaromatic group, a solvent, and a sulfonium salt having Formula (I): wherein, in Formula (I), R, R1 to R8, X, n, and Rf are the same as described in the specification.

Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an or

Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.