Abstract: A data transmission system and method in a physical network separation environment is provided, which includes: a drive device controlling connection switching for one storage medium drive writing or reading a data file on or from a predetermined storage medium; a source-side server executing writing the data file on the storage medium loaded in the storage medium drive, after switching to a connection to the storage medium drive; a clean PC conducting hash value verification and a test for infection of malicious code with respect to the data file that has been written on the storage medium, after switching to a connection to the storage medium drive; and a destination-side server executing reading the tested data file from the storage medium, after switching to a connection to the storage medium drive.

Abstract: A reverse osmosis filtering module includes: a purified water discharge pipe in which a purified water discharge path is formed, and which has a communication hole that is formed on an outer periphery thereof and communicates with the purified water discharge path; a reverse osmosis filtering part including a reverse osmosis filtering member in which a purified water flow space is formed, and which is wound around the purified water discharge pipe such that the purified water flow space communicates with the communication hole; a first flow channel formation cap provided at one side and having an inlet hole; and a second flow channel formation cap provided at the other side of the reverse osmosis filtering part and having an outlet hole.

Abstract: The present invention relates to a data transmission system and method in a physical network separation environment. According to an embodiment of the present invention, the data transmission system includes: a drive device controlling connection switching for one storage medium drive writing or reading a data file on or from a predetermined storage medium; a source-side server executing writing the data file on the storage medium loaded in the storage medium drive, after switching to a connection to the storage medium drive; a clean PC conducting hash value verification and a test for infection of malicious code with respect to the data file that has been written on the storage medium, after switching to a connection to the storage medium drive; and a destination-side server executing reading the tested data file from the storage medium, after switching to a connection to the storage medium drive.

Abstract: A reverse osmosis filtering module includes: a purified water discharge pipe in which a purified water discharge path is formed, and which has a communication hole that is formed on an outer periphery thereof and communicates with the purified water discharge path; a reverse osmosis filtering part including a reverse osmosis filtering member in which a purified water flow space is formed, and which is wound around the purified water discharge pipe such that the purified water flow space communicates with the communication hole; a first flow channel formation cap provided at one side and having an inlet hole; and a second flow channel formation cap provided at the other side of the reverse osmosis filtering part and having an outlet hole.

Abstract: The invention relates to diaminoaryl derivatives substituted by carbamate, salts thereof and a pesticidal composition containing the same, which exhibit superior pest control effects against various insect pests of insect species, in particular against moths such as the diamondback moth or Spodoptera litura.

Abstract: The invention relates to diaminoaryl derivatives substituted by carbamate, salts thereof and a pesticidal composition containing the same, which exhibit superior pest control effects against various insect pests of insect species, in particular against moths such as the diamondback moth or Spodoptera litura.

Abstract: A method of fabricating a semiconductor device includes the steps of: forming a well of first conductivity type and well of second conductivity type in a substrate; forming a field oxide layer and gate oxide layer on the substrate; forming first and second polysilicon layers on the field oxide layer and gate oxide layer, the first polysilicon layer being doped with impurities of second conductivity type, the second polysilicon layer being doped with impurities of first conductivity, the first and second polysilicon layers coming into contact with each other; patterning the first and second polysilicon layers to be isolated from each other, to thereby forming first and second gates; and forming a conductive layer between the first and second gates. Accordingly, isolation of N-type and P-type polysilicon layers from each other, and patterning of them for the purpose of forming a gate are carried out using one mask, effectively simplifying the etching process during a gate patterning process.

Abstract: A method of fabricating a semiconductor device includes the steps of: forming a well of first conductivity type and well of second conductivity type in a substrate; forming a field oxide layer and gate oxide layer on the substrate; forming first and second polysilicon layers on the field oxide layer and gate oxide layer, the first polysilicon layer being doped with impurities of second conductivity type, the second polysilicon layer being doped with impurities of first conductivity, the first and second polysilicon layers coming into contact with each other; patterning the first and second polysilicon layers to be isolated from each other, to thereby forming first and second gates; and forming a conductive layer between the first and second gates. Accordingly, isolation of N-type and P-type polysilicon layers from each other, and patterning of them for the purpose of forming a gate are carried out using one mask, effectively simplifying the etching process during a gate patterning process.

Abstract: A method of fabricating a semiconductor device includes the steps of: forming a well of first conductivity type and well of second conductivity type in a substrate; forming a field oxide layer and gate oxide layer on the substrate; forming first and second polysilicon layers on the field oxide layer and gate oxide layer, the first polysilicon layer being doped with impurities of second conductivity type, the second polysilicon layer being doped with impurities of first conductivity, the first and second polysilicon layers coming into contact with each other; patterning the first and second polysilicon layers to be isolated from each other, to thereby forming first and second gates; and forming a conductive layer between the first and second gates. Accordingly, isolation of N-type and P-type polysilicon layers from each other, and patterning of them for the purpose of forming a gate are carried out using one mask, effectively simplifying the etching process during a gate patterning process.

Abstract: A method of forming a twin well includes the steps of: forming a field oxide layer on a semiconductor substrate to define active regions of a device, and forming a first mask which exposes a predetermined active region of the semiconductor substrate; ion-implanting a first conductivity type impurity into the exposed region of the semiconductor substrate using the first mask as an ion implantation mask, to form a first well; ion-implanting a second conductivity type impurity to penetrate the first mask, to form a buried region which is self-aligned with the first well and comes into contact with the bottom of the field oxide layer; removing the first mask, and forming a second mask which is to expose the first well of the semiconductor substrate; and ion-implanting a second conductivity impurity into the exposed region of the semiconductor substrate to levels deeper and shallower than the buried region using the second mask as an ion implantation mask, to form a second well including the buried region.

Abstract: A spinner which distributes a photoresist on a wafer in a semiconductor device fabrication apparatus includes a rotation-plate vacuum chuck which holds a wafer, a driving motor which rotates the chuck and a temperature controller assembly. The temperature controller assembly maintains a temperature distribution along the chuck within a predetermined temperature-distribution range. The temperature controller assembly includes a non-contact thermometer, a non-contact variable heater, and a heat regulator. By controlling the temperature in the chuck, a photoresist layer can be coated on a wafer with more uniform thickness than if the temperature were not controlled.

Abstract: A wafer spin coating system, for coating a layer of photoresist on a wafer, includes a spin coating unit, a pumping unit and a sensing unit. A first controller in the spin coating unit controls the operation of a rotating device with the wafer mounted thereon. The first controller also outputs a photoresist pumping operation order. A second controller in the pumping unit receives the pumping operation order and outputs a pumping operation commencing signal and a valve operation signal that opens and closes a valve to control a gas feeding operation. The sensing unit receives the pumping operation commencing signal and the valve operation signal, and selectively outputs an abnormal status control signal to the first controller to stop the pumping operations if an abnormality is detected.

Abstract: An electron gun for a color cathode ray tube includes a last accelerating electrode having a large-caliber electron beam passing hole for commonly passing red, blue, and green electron beams. Both ends of the beam passing hole include circular arc portions formed with a predetermined curvature. The center portions where the green electron beam passes through protrude by a predetermined width. The length of the protrusion in the horizontal direction satisfies the following inequality: L<H-2R(1+cos .alpha.), where H designates the horizontal width of the large-caliber electron beam passing hole, R is the radius of the circular arc portions and .alpha. is the angle between a line drawn from either center of the circular arc portions to an adjacent apex of the protrusions and a line connecting centers of both circular arc portions.