Abstract: A siloxane based coating composition having excellent dyeability, abrasion resistance, glossiness and transparency, a preparation method thereof, and an optical lens coated by the coating composition are suggested. The siloxane based coating composition includes organo silane compound, inorganic oxide (H-index filler), solvent and a dyeing improving material. The dyeing improving material adopts nitric acid, hydrochloric acid, phosphoric acid, sodium nitrate, potassium nitrate, silver nitrate, or the like. The siloxane based coating composition shows excellent dyeability owing to the dyeing improving material, excellent abrasion resistance owing to the organo silane compound, and excellent glossiness and transparency, so it may be applied as a coating film on a surface of a plastic lens such as optical lens, industrial safety lens and leisure-purpose goggle that require high transparency.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M?Oy) or amorphous metal oxynitride (M?OyNz).

Abstract: A gate structure includes a gate insulation layer pattern, a gate electrode, a first spacer and a protecting layer pattern. The gate insulation layer pattern is on a substrate. The gate electrode is on the gate insulation layer pattern, the gate electrode including a lower portion having a first width, a central portion having a second width smaller than the first width and an upper portion having a third width. The first spacer is on a lower sidewall of the gate electrode. The protecting layer pattern is on a central sidewall of the gate electrode.

Abstract: A siloxane based coating composition having excellent dyeability, abrasion resistance, glossiness and transparency, a preparation method thereof, and an optical lens coated by the coating composition are suggested. The siloxane based coating composition includes organo silane compound, inorganic oxide (H-index filler), solvent and a dyeing improving material. The dyeing improving material adopts nitric acid, hydrochloric acid, phosphoric acid, sodium nitrate, potassium nitrate, silver nitrate, or the like. The siloxane based coating composition shows excellent dyeability owing to the dyeing improving material, excellent abrasion resistance owing to the organo silane compound, and excellent glossiness and transparency, so it may be applied as a coating film on a surface of a plastic lens such as optical lens, industrial safety lens and leisure-purpose goggle that require high transparency.

Abstract: There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M'Oy) or amorphous metal oxynitride (M'OyNz).

Abstract: A gate structure includes a gate insulation layer pattern, a gate electrode, a first spacer and a protecting layer pattern. The gate insulation layer pattern is on a substrate. The gate electrode is on the gate insulation layer pattern, the gate electrode including a lower portion having a first width, a central portion having a second width smaller than the first width and an upper portion having a third width. The first spacer is on a lower sidewall of the gate electrode. The protecting layer pattern is on a central sidewall of the gate electrode.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M?Oy) or amorphous metal oxynitride (M?OyNz).

Abstract: The present invention relates to a silicone-based coating composition with middle and high refractive index, a method of preparing the same, and an optical lens prepared therefrom, and more specifically to a silicone-based coating composition including organosilanes, inorganic oxides having a refractive index of from 1.7 to 3.0, an aluminum acetyl acetone, a C1-C5 alkyl cellosolve, and a solvent, a method of preparing the same, and an optical lens prepared therefrom. The siloxane-based coating composition is transparent, not sticky, and stable for long time storage. Therefore, the coating composition can be applied to a coating layer on a surface of a plastic lens such as an optical lens, an industrial safety lens, or goggles for leisure.

Abstract: The present invention relates to a silicone-based coating composition improved adhesion and dyeability, and more specifically, to a silicone-based coating composition prepared by adding a compound(s) having at least one functional group selected from the group consisting of amino, carboxylic acid, mercapto, methylol, anhydride, and isocyanate into an organic-inorganic sol prepared by a sol-gel reaction of organosilanes at high temperature, a method of preparing the same, and an optical lens prepared therefrom. The dyeability of the coating composition is improved by conducting sol-gel reaction at high temperature, and the adhesion to the substrate is improved by adding the compound capable of hydrogen bond and condensation reaction. Therefore, the coating layer of the present invention is proper to be applied to a coating layer for a plastic lens such as glasses, an industrial glass, or goggles for leisure because of good dyeability and adhesion to substrate.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.

Abstract: There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle Q times. At least one of the values K and Q is an integer of 2 or more. K and Q are integers ranging from 1 to about 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, and then injecting an oxide gas into the reactor. The silicon-doped metal oxide layer formation cycle includes supplying a metal source gas including silicon into a reactor containing the substrate, and then injecting an oxide gas into the reactor.

Abstract: Provided is a semiconductor device having an etch-resistant L-shaped spacer and a fabrication method thereof. The semiconductor device comprises a semiconductor substrate, a gate insulating layer formed on the semiconductor substrate, a gate electrode formed on the gate insulating layer, an L-shaped lower spacer conformally formed on sidewalls of the gate electrode and a portion of the substrate, an etch-resistant L-shaped spacer conformally formed on the L-shaped lower spacer, low-concentration source/drain regions aligned to sides of sidewall portions of the L-shaped lower spacer and formed within the substrate, and high-concentration source/drain regions aligned to sides of a bottom portions of the etch-resistant L-shaped spacer and formed within the substrate.

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M?Oy) or amorphous metal oxynitride (M?OyNz).

Abstract: There are provided a nonvolatile memory device and a method of fabricating the same. A gate region of the nonvolatile memory device is formed as a stack structure including a tunnel oxide layer, a trapping layer, a blocking layer and a control gate electrode. The trapping layer is formed of a high-k dielectric having a higher dielectric constant than that of the tunnel oxide layer. When the trapping layer is formed of high-k dielectric, an EOT in a same thickness can be reduced, and excitation of electrons of the control gate electrode to the tunnel oxide layer due to a high potential barrier relative to the tunnel oxide layer is prevented so that program and erase voltages can be further reduced. As such, a problem that the tunnel oxide layer is damaged due to the conventional high program and erase voltages can be solved by reducing the program and erase voltages, and program and erase speeds of the transistor can be further improved.

Abstract: There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Abstract: Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time.

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.