Abstract: The present disclosure relates to an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and a first emitting part including a first red emitting material layer and positioned between the first and second electrode, the first red emitting material layer including a first delayed fluorescent compound, a second delayed fluorescent compound and a first fluorescent compound, wherein the first delayed fluorescent compound is represented by Formula 1, the second delayed fluorescent compound is represented by Formula 3, and the first fluorescent compound is represented by Formula 5.

Abstract: An organic light emitting device including: a substrate defining a first pixel region and a second pixel region; and an organic light emitting diode over the substrate. The organic light emitting diode includes a transmissive electrode, a reflective electrode facing the transmissive electrode and an emissive layer disposed between the transmissive electrode and the reflective electrode. The emissive layer includes a first emissive layer and a second emissive layer. The first emissive layer is in the first pixel region and includes: a first blue emitting material layer including a first blue fluorescent compound, and a second blue emitting material layer including a second blue fluorescent compound and a blue phosphorescent compound. The second emissive layer is in the second pixel region and includes: a first green emitting material layer including a first green delayed fluorescent compound, and a second green emitting material layer including a second green delayed fluorescent compound.

Abstract: An organic light emitting diode includes at least one emitting material layer disposed between two electrodes includes a first compound having an azine moiety substituted two cyano groups and a carbazole moiety linked to the azine moiety through a phenylene group, and a second compound of a boron-based fluorescent material and an organic light emitting device including the organic light emitting diode. The excitons generated at the first compound are transferred efficiently to the second compound so that the luminous properties of the organic light emitting diode and/or the organic light emitting device can be improved.

Abstract: The present invention relates to an organic light emitting diode and an organic light emitting device including the organic light emitting diode. The organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first blue emitting material layer including a first compound and a second compound and positioned between the first and second electrodes, wherein the first compound is represented by Formula 1, and the second compound is represented by Formula 3.

Abstract: The present invention relates to an organic light emitting diode and an organic light emitting device including the organic light emitting diode. The organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first blue emitting material layer including a first compound, a second compound and a third compound and positioned between the first and second electrodes, wherein the first compound is represented by Formula 1, the second compound is represented by Formula 3, and the third compound is represented by Formula 5, and wherein in the first blue emitting material layer, a summation of a weight % of the first compound, a weight % of the second compound and a weight % of the third compound is 100%, and the weight % of each of the first and second compounds is greater than the weight % of the third compound.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: Provided is a cap-type vent having a porous waterproof air-permeable sheet inserted and mounted in a cap housing having fixing ribs formed therein, and fixing the waterproof air-permeable sheet by a supporting member made from an elastic material. The provided cap-type vent comprises a supporting member having one end coupled to an object, a waterproof air-permeable sheet disposed at the other end of the supporting member; and a cap housing formed in a cup shape having an opening formed at one end of the cup shape, and having the supporting member and the waterproof air-permeable sheet inserted through the opening, the supporting member is formed with an air circulation hole formed by penetrating the supporting member, and the inner side surface of the cap housing is formed with a fixing rib is configured to fix the supporting member by contacting the outer sidewall of the supporting member.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: Provided is a cap-type vent having a porous waterproof air-permeable sheet inserted and mounted in a cap housing having fixing ribs formed therein, and fixing the waterproof air-permeable sheet by a supporting member made from an elastic material. The provided cap-type vent comprises a supporting member having one end coupled to an object, a waterproof air-permeable sheet disposed at the other end of the supporting member; and a cap housing formed in a cup shape having an opening formed at one end of the cup shape, and having the supporting member and the waterproof air-permeable sheet inserted through the opening, the supporting member is formed with an air circulation hole formed by penetrating the supporting member, and the inner side surface of the cap housing is formed with a fixing rib is configured to fix the supporting member by contacting the outer sidewall of the supporting member.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Abstract: Disclosed is a patterning device. The patterning device may include a substrate; a patterned layer disposed on the substrate and including a first pattern formed on a surface thereof; a heat generating layer disposed on the patterned layer, including a second pattern (corresponding to the first pattern) formed on a surface thereof, and generating heat when electric power is supplied; and a first electrode and a second electrode disposed on the heat generating layer, spaced apart from each other, and electrically connected to the heat generating layer.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Abstract: A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.