Patents by Inventor Joo-Chan Kim

Joo-Chan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing split gate flash memory device
    Patent number: 6800525
    Abstract: The method of manufacturing a split gate flash memory device includes the steps of (a) providing a semiconductor substrate of a conductivity type opposite to that of a first junction region; (b) sequentially forming a first dielectric film, a first conductive film, a second dielectric film and a third dielectric film on an overall upper face of the substrate; (c) etching the third dielectric film by a given thickness so as to expose the second dielectric film; (d) removing the exposed second dielectric film, and eliminating the remaining third dielectric film; (e) etching the first conductive film and the second dielectric film by a given thickness so as to partially expose the first conductive line and the first conductive film; (f) forming a fourth dielectric film on a portion of the exposed first conductive line and first conductive film; (g) eliminating the remaining second dielectric film remained, and exposing the first conductive film provided in a lower part thereof; and (h) etching the first dielectr
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: October 5, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eui-Youl Ryu, Jae-Min Yu, Jin-Woo Kim, Jae-Hyun Park, Yong-Hee Kim, Don-Woo Lee, Dai-Geun Kim, Sag-Wook Park, Joo-Chan Kim, Kook-Min Kim, Min-Soo Cho, Chul-Soon Kwon
  • Method of manufacturing split gate flash memory device
    Publication number: 20040027861
    Abstract: The method of manufacturing a split gate flash memory device includes the steps of (a) providing a semiconductor substrate of a conductivity type opposite to that of a first junction region; (b) sequentially forming a first dielectric film, a first conductive film, a second dielectric film and a third dielectric film on an overall upper face of the substrate; (c) etching the third dielectric film by a given thickness so as to expose the second dielectric film; (d) removing the exposed second dielectric film, and eliminating the remaining third dielectric film; (e) etching the first conductive film and the second dielectric film by a given thickness so as to partially expose the first conductive line and the first conductive film; (f) forming a fourth dielectric film on a portion of the exposed first conductive line and first conductive film; (g) eliminating the remaining second dielectric film remained, and exposing the first conductive film provided in a lower part thereof; and (h) etching the first dielectr
    Type: Application
    Filed: July 31, 2003
    Publication date: February 12, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eui-Youl Ryu, Jae-Min Yu, Jin-Woo Kim, Jae-Hyun Park, Yong-Hee Kim, Don-Woo Lee, Dai-Geun Kim, Sag-Wook Park, Joo-Chan Kim, Kook-Min Kim, Min-Soo Cho, Chul-Soon Kwon