Abstract: In embodiments, a semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode and a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas.

Abstract: A smart self-repair device and method of self-repairing a package is disclosed. The smart self-repair device may include a fuse array configured to store information regarding respective bits of a fail address in fuses. The smart self-repair device may include a self-repair control circuit configured to control repairing of not only a target mat in which a fail occurs, but also adjacent upper and lower mats sharing a sense amplifier along with the target mat, and to output fail address information corresponding to a fail mode, and row fuse set information or a column fuse set information. The smart self-repair device may include a data control circuit configured to output repair information to the fuse array based on the fail address information and the row fuse set information or the column fuse set information, and may include a control circuit configured to control a rupture operation of the fuse array.

Abstract: An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode. The transmission windows can be formed in the second electrode, that is, a cathode.

Abstract: A semiconductor device may be provided. The semiconductor device may include a failure information generation circuit configured to generate first failure information. The semiconductor device may include a first latch data generation circuit configured to include the first failure information into first latch data of a first block and configured to output the first latch data including the first failure information. The semiconductor device may include a data synthesis circuit configured to generate first synthesis data.

Abstract: An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode. The transmission windows can be formed in the second electrode, that is, a cathode.

Abstract: The monitoring circuit of a semiconductor device includes: a boot-up controller configured to generate a boot-up enable signal in response to a power-up signal and a boot-up command signal; a read-period generator configured to output a read-period signal in response to a boot-up read signal; and a monitoring unit configured to output the read-period signal to an external output terminal during activation of the boot-up enable signal to allow the read-period signal to be monitored.

Abstract: An organic light emitting display and a method of manufacturing the same. The organic light-emitting display is a transparent display where one can see through the display to view an image on the other side of the display. Each pixel of the display has a first region that includes an organic light emitting diode and a thin film transistor, and a larger second region that is transparent. The second region is made of either transparent layers or ultra-thin layers so that light is not blocked. A second electrode of the display may include magnesium and may be produced by a selective deposition process, so that use of a fine metal mask may be avoided.

Abstract: An organic light emitting display and a method of manufacturing the same. The organic light-emitting display is a transparent display where one can see through the display to view an image on the other side of the display. Each pixel of the display has a first region that includes an organic light emitting diode and a thin film transistor, and a larger second region that is transparent. The second region is made of either transparent layers or ultra thin layers so that light is not blocked. A second electrode of the display may include magnesium and may be produced by a selective deposition process, so that use of a fine metal mask may be avoided.

Abstract: A repair circuit includes a test data processing unit that outputs first and second fail detection signals using first and second test data of first and second memory banks, respectively, in response to a test mode signal, a repair address control unit that sets a priority of the first and second memory banks and selectively stores first and second addresses of the first and second memory banks based on the set priority in response to the first and second fail detection signals, and a fuse unit that performs repair programming based on the addresses selectively stored in the repair address control unit.

Abstract: The monitoring circuit of a semiconductor device includes: a boot-up controller configured to generate a boot-up enable signal in response to a power-up signal and a boot-up command signal; a read-period generator configured to output a read-period signal in response to a boot-up read signal; and a monitoring unit configured to output the read-period signal to an external output terminal during activation of the boot-up enable signal to allow the read-period signal to be monitored.

Abstract: An OLED device, comprising: a first electrode (10), a second electrode (11) and an organic thin film layer (13); the organic thin film layer comprises a hole layer (103), an electron layer (104) and an organic light emitting layer (105) located between the hole layer (103) and the electron layer (104); and the organic thin film layer (13) further comprises a hole blocking layer (12). The organic light emitting layer (105) comprises a first light emitting unit (1051), a second light emitting unit (1052) and a third light emitting unit (1053). A manufacturing method of an OLED device and a display apparatus comprising an OLED device are provided.

Abstract: An integrated circuit may include a first programmable storage cell group suitable for storing program validity information, second to N-th programmable storage cell groups suitable for storing a plurality of data, wherein N is an integer equal to or more than 3, and a validity determination unit suitable for determining whether the program validity information read from the first programmable storage cell group is valid or not so that read operations for the second to N-th programmable storage cell groups is performed or skipped based on the determined result.

Abstract: An integrated circuit may include a first programmable storage cell group suitable for storing program validity information, second to N-th programmable storage cell groups suitable for storing a plurality of data, wherein N is an integer equal to or more than 3, and a validity determination unit suitable for determining whether the program validity information read from the first programmable storage cell group is valid or not so that read operations for the second to Nth programmable storage cell groups is performed or skipped based on the determined result.

Abstract: An integrated circuit may include a first programmable storage cell group suitable for storing program validity information, second to N-th programmable storage cell groups suitable for storing a plurality of data, wherein N is an integer equal to or more than 3, and a validity determination unit suitable for determining whether the program validity information read from the first programmable storage cell group is valid or not so that read operations for the second to N-th programmable storage cell groups is performed or skipped based on the determined result.

Abstract: An operation method of a memory device includes entering a repair mode, changing an input path of setting data from a set path to a repair path in response to the entering of the repair mode, receiving the setting data together with a setting command, ending the repair mode after the receiving is repeated a set number of times, changing the input path of the setting data from the repair path to the set path in response to the ending of the repair mode, and programming a repair address for a defective memory cell of the memory device to a nonvolatile memory using the setting data.

Abstract: An operation method of a memory device includes entering a repair mode, changing an input path of setting data from a set path to a repair path in response to the entering of the repair mode, receiving the setting data together with a setting command, ending the repair mode after the receiving is repeated a set number of times, changing the input path of the setting data from the repair path to the set path in response to the ending of the repair mode, and programming a repair address for a defective memory cell of the memory device to a nonvolatile memory using the setting data.

Abstract: A textile electrode kit mounted to the clothing includes a contact-type electrode or a non-contact electrode, and the textile electrode kit may be mounted to a clothing having a lower fixed member configured to reduce a motion artifact and a partially three-dimensional clothing structure by means of sewing. On occasions, the textile electrode kit having a non-contact electrode may be inserted into and used in an electrode-mounting pocket or an electrode-mounting tunnel formed at the clothing. The textile electrode kit of the present disclosure may detect various kinds of bio signals such as a heart activity signal, an electrocardiogram (ECG) signal, an electromyogram signal, a breathing signal or the like.

Abstract: Provided is a conductive textile-based inductance-type electrode apparatus for bio-signal detection, which includes an electrode unit (10) having a textile electrode (200) for receiving an oscillation signal from an oscillating unit and outputting a bio signal of a subject person, the textile electrode having a spiral coil (101) disposed at a textile sheet (103) formed by spirally turning a coil thread with conductivity from one end to the other end disposed at a center portion thereof, a bottom textile sheet (120) coming in contact with a skin of the subject person, and a buffering member (145) disposed between the electrode unit (10) and the bottom textile sheet (120) to separate the electrode unit (10) from the skin.

Abstract: An OLED device, comprising: a first electrode (10), a second electrode (11) and an organic thin film layer (13); the organic thin film layer comprises a hole layer (103), an electron layer (104) and an organic light emitting layer (105) located between the hole layer (103) and the electron layer (104); and the organic thin film layer (13) further comprises a hole blocking layer (12). The organic light emitting layer (105) comprises a first light emitting unit (1051), a second light emitting unit (1052) and a third light emitting unit (1053). A manufacturing method of an OLED device and a display apparatus comprising an OLED device are provided.

Abstract: An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a quaternary ammonium salt formed on a top electrode of the light-emitting device, the quaternary ammonium salt having the following structure: wherein the anion X? is Cl?, Br?, I? or NO3?; and the substituents R1, R2, and R3 are the same or different.