Abstract: Embodiments relate to a method of manufacturing an image sensor which may include forming a gate pattern including a tunnel oxide film, an oxide-nitride-oxide (ONO) film, a floating gate and a control gate over a semiconductor substrate. An oxide film and a nitride film may be formed over the semiconductor substrate including the gate pattern. A photoresist pattern may be formed which covers the oxide film and the nitride film formed over the gate pattern. The nitride film may be etched in a region not covered by the photoresist pattern. The oxide film may be etched to have a predetermined thickness. A deep implant process may deeply implant an N-type dopant into the semiconductor substrate. Ashing and cleaning processes may remove the remaining photoresist pattern.

Abstract: A burst length control circuit capable of performing read and write operations in high speed according to a burst length and a semiconductor memory device using the same includes a clock signal generating unit for generating first and second internal clock signals from a clock signal in response to a first and second burst signals, a control signal generating unit for driving in response to the first and second internal clock signals, wherein the control signal generating unit for generating first and second control signals, enable sections of the first and second control signals being controlled according to the first and second burst signals at a read operation or write operation, and a burst termination signal generating unit for generating a burst termination signal in response to the first and second burst signals. The first control signal is disabled in response to the burst termination signal.

Abstract: A data output control circuit in a semiconductor memory device includes a driving signal generating unit configured to decode first and second I/O mode signals and first and second address level signals in response to a bank active signal and generate driving signals, and a data output multiplexing unit configured to output data signals of global I/O lines as multiplexing signals in response to the driving signals.

Abstract: Mechanisms regulating cell proliferation stop and differentiation initiation during the development stage of mammalian embryo, and the proteins involved therein, are presented. Differentiation regulators, methods of regulating differentiation, transgenic organisms with loss of expression of the differentiation regulator, and methods of preparing the transgenic organisms, are provided.

Abstract: A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor substrate; b) conformably forming a first sidewall oxide layer made of a silicon oxide layer along both sidewalls of the stack gate pattern; c) performing a plasma nitride process for forming a nitride barrier layer in the first sidewall oxide layer; d) forming a sidewall nitride layer on the first sidewall oxide layer; e) conformably forming a second sidewall oxide layer on the sidewall nitride layer; and f) performing an etching process for forming a spacer which includes the first sidewall oxide layer, the nitride barrier layer, the sidewall nitride layer, and the second sidewall oxide layer. The flash memory device prevents data from being lost via the spacer equipped with a nitride barrier layer, resulting in increased reliability of a desired flash memory device.

Abstract: A transfer substrate includes a base layer, a light-reflecting layer pattern, a light-to-heat conversion layer and a transfer layer. The transfer layer is formed on the light-to-heat conversion layer. A line shaped laser beam may be scanned over the entire area of the transfer substrate to transfer designated portions of the transfer layer onto designated electrodes on an array substrate to make an organic electroluminescent display. Thus, processing time may be reduced, and an organic electroluminescent element may be efficiently formed on a large-size substrate.

Abstract: The present invention relates to an organic light emitting element and an organic light emitting device including the same. An impurity layer close to an electrode is doped with a small amount, and an impurity layer for a p-n junction is doped with a large amount, such that a high current may flow under a low voltage.

Abstract: In a method of manufacturing an organic light emitting display according to an embodiment, when a thin film transistor substrate including a display area and a non-display area is prepared, an organic light emitting layer is formed on the display area. Then, a first cathode layer is formed on the organic light emitting layer through a first deposition method, and a second cathode layer is formed on the first cathode layer through a second deposition method. The first and/or second deposition method may be performed by using heat. Thus, the light-emitting quality of the organic light emitting display may be improved.

Abstract: In a method for controlling thin-film forming velocity, a method for manufacturing a thin film and a system for manufacturing the thin film, the method for controlling the thin-film forming velocity includes measuring the thin-film forming velocity at a target substrate by sensing a depositing source gas generated from a depositing source part. Then, a distance between the depositing source part and the target substrate is controlled so that the thin-film forming velocity substantially equals a predetermined thin-film forming velocity. Accordingly, the thin-film forming velocity is controlled by changing the distance between the depositing source part and the target substrate, so that time spent in controlling the thin-film forming velocity may be decreased.

Abstract: In accordance with one or more embodiments of the present disclosure, a method of manufacturing a light-emitting element includes forming an anode on a substrate, forming a first transport layer including one or more first polar compounds on the anode, forming a first non-polar solvent layer on the first transport layer, forming a first polar solution layer including one or more light-emitting compounds on the first non-polar solution layer, drying a polar solvent of the first polar solution layer and the first non-polar solvent layer so that a light-emitting layer including the one or more light-emitting compounds is formed on the first transport layer and forming a cathode on the light-emitting layer. The cathode is disposed opposite to the anode. As such, damage to the first transport layer may be reduced when forming the light-emitting layer, which may improve the reliability and productivity of a manufacturing process.

Abstract: An organic light-emitting diode (“OLED”) device includes an organic light-emitting substrate part and a protective cover part. The organic light-emitting substrate part includes a base substrate and an OLED display portion formed on the base substrate to display an image. The protective cover part includes a first frit glass disposed on the OLED display portion to cover the OLED display portion, and a second frit glass formed around a periphery of the first frit glass. The second frit glass is connected to the first frit glass.

Abstract: An organic light-emitting diode (“OLED”) display device includes; an organic light-emitting substrate part including a base substrate including; a display region and a peripheral region substantially surrounding the display region, and an OLED display portion disposed in the display region, and a protective cover part including; a cover substrate facing the base substrate, a cover frit glass disposed on a face of the cover substrate and contacting and substantially covering the OLED display portion, and a sealing frit glass disposed on the face of the cover substrate in the peripheral region and combining the base substrate and the cover substrate with each other.

Abstract: A display includes a substrate, a plurality of first and second signal lines formed on the substrate and insulated from each other, a plurality of driving voltage lines formed with a same layer as the first signal lines, at least one driving voltage connection formed with a same layer as the second signal lines, at least one connecting member electrically connecting the driving voltage lines and the driving voltage connection, at least one first thin film transistor connected to the first and second signal lines, at least one second thin film transistor connected to the first thin film transistor and the driving voltage lines, at least one first electrode connected to the second thin film transistors, at least one second electrode opposing the first electrode, at least one organic light emitting member formed between the first electrode and the second electrode, and at least one assistant member formed between the connecting member and the second electrode.

Abstract: A method of manufacturing a display device includes preparing an acceptor substrate, preparing a donor substrate having an organic layer; aligning and combining the acceptor substrate and the donor substrate, and keeping a temperature difference between the acceptor substrate and the donor substrate to transfer the organic layer to the acceptor substrate. Thus, the present invention provides a display device that can simplify a process and decrease a consumption rate of an organic material.

Abstract: In one embodiment, a display device includes: a first electrode; a hole transfer layer which is formed on the first electrode, the hole transfer layer comprising a first host used as a hole transfer material and a first dopant used as an electron accepting material; an emitting material layer which is formed on the hole transfer layer, the emitting material layer comprising red, blue and green light material layers stacked in sequence; an electron transfer layer which is formed on the emitting material layer, the electron transfer layer comprising a second host used as an electron transfer material and a second dopant used as an electron donating material; and a second electrode which is formed on the electron transfer layer.

Abstract: A display device includes: a first electrode; a second electrode; and an emitting material layer which is interposed between the first electrode and the second electrode, the emitting material layer being doped with an electric charge transport material of which content varies along a thickness direction and comprising a plurality of sub-layers staked in sequence.

Abstract: An evaporation apparatus that is capable of determining the amount of organic material that is used for deposition of an organic layer (e.g. in an OLED) is presented. The apparatus evaporates an organic material through multiple stages and and includes: an evaporation source that evaporates the organic material and includes a heat source, a substrate supporter that supports a substrate, a sensor that senses a degree of evaporation of the organic material, a controller that calculates a deposition thickness of the organic material that is deposited during the stabilization stage, the deposition stage and the cooling stage by using the degree of evaporation sensed by the sensor, and a usage amount calculator that calculates a usage amount of the organic material by using a conversion factor between the deposition thickness of the organic material and the usage amount of the organic material, and the deposition thickness calculated by the controller.

Abstract: A deposition apparatus comprises a first cavity which comprises an evaporation source entrance and a gas discharge port; a second cavity operable to communicate with the first cavity through the evaporation source entrance; an opening/closing part which controllably opens and closes the evaporation source entrance; and a driver for moving the evaporation source between the first cavity and the second cavity through the evaporation source entrance.

Abstract: Apparatus and a method for forming a thin film including a vacuum chamber, a substrate holder located on the inner upper side of the vacuum chamber to secure a substrate, an evaporation source located on the inner lower side of the vacuum chamber to evaporate a deposition material, an evaporation source shutter substantially confining the deposition material evaporated to the evaporation source, a sensor located within the vacuum chamber to detect the thickness of the deposition material deposited on itself, and a calculation portion calculating the thickness of the deposition material deposited on the evaporation source shutter using data detected by the sensor.

Abstract: A mask for depositing an organic film includes a mask sheet having at least two openings with different sizes and a blocking part formed in a region where the at least two openings are not formed. A supporting frame is formed on a back side of the mask sheet to support the mask sheet, and a mask frame receives a peripheral region of the supporting frame and supports a vertical pressure applied to the supporting frame and the mask sheet.