Abstract: The present invention relates to an oxygen sensor including a porous ceramic coating layer and a method of forming a porous ceramic coating layer. More particularly, the present invention relates to an oxygen sensor including a porous ceramic coating layer formed on the surface of a sensing part of the oxygen sensor by plasma-coating the sensing part with ceramic powder having a predetermined particle size, and a method of forming a porous ceramic coating layer.

Abstract: Embodiments of the present invention are directed to heterocyclic compounds and organic light-emitting devices including the heterocyclic compounds. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans.

Abstract: An LDMOS device includes a second conduction type buried layer, a first conduction type drain extension region configured to be formed on and/or over a region of the second conduction type buried layer, a second conduction type drain extension region configured to be formed in a partial region of the first conduction type drain extension region, a first conduction type body, a first guard ring configured to be formed around the second conduction type drain extension region and configured to include a second conduction type impurity layer, and a second guard ring configured to be formed around the first guard ring and configured to include a high-voltage second conduction type well and a second conduction type impurity layer. Further, the second conduction type impurity layer of the first guard ring and the second conduction type impurity layer of the second guard ring operate as an isolation.

Abstract: An organic light-emitting device including a substrate, an anode layer on the substrate, the anode layer including WOxNy (2.2?x?2.6 and 0.22?y?0.26), an emission structure layer on the anode layer, and a cathode layer on the emission structure layer.

Abstract: Disclosed is an organic light emitting diode device including an anode, a cathode, an emission layer between the anode and the cathode, and a buffer layer positioned between the emission layer and the anode. The buffer layer includes an oxide, fluoride, quinolate, or acetoacetate compound of an alkaline metal or an alkaline-earth metal, as well as a material having a work function of about 2.6 to about 4.5 eV. The buffer layer also has a thickness of about 30 ? to about 400 ?.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a thin film transistor formed on the substrate, a first electrode formed on the thin film transistor and electrically connected to the thin film transistor, a hole injection layer (HIL) formed on the first electrode, a hole transport layer (HTL) formed on the hole injection layer (HIL), an emission layer formed on the HTL, an electron transport layer (ETL) formed on the emission layer, a first buffer layer located on the ETL, and a second electrode formed on the first buffer layer.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin film transistor and electrically connected to the thin film transistor, a first auxiliary layer disposed on the first electrode, an emission layer disposed on the first auxiliary layer, an electron transport layer disposed on the emission layer, a first buffer layer disposed on the electron transport layer, and a second electrode disposed on the first buffer layer.

Abstract: Provided is an organic light-emitting device including a first electrode, a second electrode disposed opposite to the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron-transporting layer disposed between the emission layer and the second electrode. The electron-transporting layer includes a first electron-transporting material and a second electron-transporting material. The lowest unoccupied molecular orbital (LUMO) energy level of the first electron-transporting material (EL1) and the lowest unoccupied molecular orbital (LUMO) energy level of the second electron-transporting material (EL2) satisfy the equation 0.1 eV?|EL1?EL2|?0.3 eV.

Abstract: Disclosed is an organic light emitting diode device including an anode, a cathode, an emission layer between the anode and the cathode, and a buffer layer positioned between the emission layer and the anode. The buffer layer includes an oxide, fluoride, quinolate, or acetoacetate compound of an alkaline metal or an alkaline-earth metal, as well as a material having a work function of about 2.6 to about 4.5 eV. The buffer layer also has a thickness of about 30 ? to about 400 ?.

Abstract: An organic light-emitting display device includes a substrate which includes a plurality of areas, a plurality of first electrodes disposed on the areas of the substrate, respectively, a second electrode disposed on the first electrodes, and a plurality of emitting layers disposed between the first electrodes and the second electrode. At least two of the emitting layers are disposed on all of the areas.

Abstract: A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: wherein R1 and R2, and A and A? are defined as in the specification.

Abstract: In a method of manufacturing a quantum dot, a core may be formed using (utilizing) at least one cation precursor and at least one anion precursor. The core may be reacted with a shell forming precursor and a ligand forming precursor for more than one hour to form a shell enclosing the core and a ligand. A nanoparticle including the core, the shell and the ligand may be washed.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; a first electrode on the substrate; a first emission layer on the first electrode; a second emission layer on the first emission layer; a second electrode on the second emission layer; and a light emitting assistance layer selectively positioned between the first emission layer and the second emission layer.

Abstract: A natural soap is made using a herbal medicine decoction. The natural soap includes herbs including lotus roots, lotus leaves, red ginseng, Hippophae rhamnoides leaves and trunk, persimmon leaves, thuja orientalis, ginger, rosemary, black beans, black sesame, aloe, mulberry leaves, Orostachys japonicus, Angelica gigas, green tea, pine needles, mint, pleuropterus multiflorus, blueberry, and Acorus gramineus. A ripening device ripens the herbs in temperatures of 65 to 95° C. for 3 to 15 days, distilled water or soft water is poured onto the herbs, and the herbs mixed with the water are decocted by a decoction maker.

Abstract: A Lateral Double Diffused Metal-Oxide-Semiconductor (LDMOS) semiconductor device includes a substrate; a gate region, a source region, and a drain region on and/or over the substrate, a well region at one side of the drain region, and a guardring region disposed at one side of the well region and connected electrically to the well region.

Abstract: A display device includes a display panel configured to display an image in an upward direction and a reflective panel on the display panel, the reflective panel configured to selectively transmit or reflect light with respect to an area corresponding to the image.

Abstract: An LDMOS device may include at least one of a second conduction type buried layer and a first conduction type drain extension region. An LDMOS device may include a second conduction type drain extension region configured to be formed in a portion of the first conduction type drain extension region. The second conduction type drain extension region may include a gate pattern and a drain region. An LDMOS device may include a first conduction type body having surface contact with the second conduction type drain extension region and may include a source region. An LDMOS device may include a first guard ring formed around the second conduction type drain extension region. An LDMOS device may include a second guard ring configured to be formed around the first guard ring and configured to be connected to a different region of the second conduction type buried layer.

Abstract: An organic light emitting diode (OLED) display includes a substrate including a plurality of pixels defined thereon, a thin film transistor (TFT) positioned at each pixel, a negative electrode electrically connected to the TFT, an organic emission layer positioned on the negative electrode, and a positive electrode positioned on the organic emission layer, the positive electrode including an auxiliary layer positioned on the organic emission layer, a conductive layer positioned on the auxiliary layer, and an insulation layer positioned on the conductive layer.

Abstract: A photoluminescence diode which may decrease a driving voltage may include an anode, a cathode, an emission layer interposed between the anode and the cathode, and an electron accepting layer interposed between the emission layer and the cathode and including one material selected from fullerene, methanofullerene, doped fullerene, doped methanofullerene, a derivative thereof, and a mixture thereof.

Abstract: Embodiments of the present invention are directed to a compound represented by Formula 1, and to an organic light-emitting device including the compound.